MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WSE3099


MOSFET P Trench 30V 5A (Tc) 2V @ 250uA 65 mΩ @ 5A,10V SOT-89 (SOT-89-3) RoHS
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Winsok 6222
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AUD 0.2049
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BSS806NE H6327


Infineon Technologies MOSFET N-Ch 20V 2.3A SOT-23-3
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Infineon 6219
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AUD 0.0995
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2.3 A20 V41 mOhmsN - Channel 300 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel8 V1.7 nCEnhancement  
DMC4047LSD-13


MOSFET FET BVDSS 31V 40V 1.3W 1180pF 21.3nC
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Diodes Incorporated 6214
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AUD 0.3684
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6.9 A , 4.5 A40 V32 mOhms , 55 mOhmsN - Channel, P - Channel 2.2 v , 2.4 V- 55 C+ 150 C1.8 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V19.1 nC , 21.5 nCEnhancement  
IRFR024NTRLPBF


Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
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Infineon 6211
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AUD 0.6718
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16 A55 V75 mOhmsN - Channel    38 WSmd/SmtDPAKReelSi1 Channel20 V13.3 nC   
FDD3N40TM


MOSFET 400V N-CH MOSFET
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ON Semiconductor 6209
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AUD 0.4697
Multiples of: 1

2 A400 V2.8 OhmsN - Channel  - 55 C+ 150 C30 WSmd/SmtDPAKReelSi1 Channel30 V Enhancement  
MMFTN3019E-MS


SOT-523 MOSFETs ROHS
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MSKSEMI 6208
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AUD 0.0312
Multiples of: 20

                   
CSD13201W10


N-Channel 12 V 1.6A (Ta) 1.2W (Ta) Surface Mount 4-DSBGA (1x1)
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Texas Instruments 6205
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AUD 0.1868
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1.6 A12 V34 mOhmsN - Channel8 V800 mV- 55 C+ 150 C1.2 WSmd/SmtDSBGA - 4ReelSi1 Channel4.5 V2.3 nCEnhancement Nexfet
SSM3K56CT,L3F


MOSFET Small Low ON Resistane MOSFETs
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Toshiba 6203
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AUD 0.0861
Multiples of: 5

800 mA20 V186 mOhmsN - Channel 400 mV + 150 C500 mW (1/2 w)Smd/SmtCST - 3ReelSi1 Channel8 V1 nCEnhancement  
SI2325DS-T1-GE3


MOSFET -150V Vds 20V Vgs SOT-23
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Vishay 6154
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AUD 0.4633
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         Smd/SmtSOT - 23 - 3Cut TapeSi     Trenchfet
PSMN3R4-30BLE,118


MOSFET N-channel 30 V 3.4 mo FET
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Nexperia 503
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AUD 3.3099
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120 A30 V2.95 mOhmsN - Channel20 V1.7 V- 55 C+ 175 C178 WSmd/SmtSOT - 404 - 3ReelSi1 Channel20 V81 nCEnhancement  
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