MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIR184DP-T1-RE3


MOSFET 60V Vds 20V Vgs PowerPAK SO-8
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 5820
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AUD 0.8174
Multiples of: 3000

73 A60 V4.7 mOhmsN - Channel 2 V- 55 C+ 150 C62.5 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel10 V21 nCEnhancement Trenchfet, Powerpak
RW4E045AJTCL1


MOSFET MOSFET
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ROHM 5820
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AUD 0.8096
Multiples of: 1

4.5 A30 V40 mOhmsN - Channel 1.5 V + 150 C1.5 WSMD/SMTDFN1616 - 7TReel , Cut TapeSi1 Channel- 12 V , + 12 V4 nCEnhancement  
SIR618DP-T1-GE3


MOSFET 200V Vds 20V Vgs PowerPAK SO-8
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Vishay 5820
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AUD 0.7483
Multiples of: 1

14.2 A200 V76 mOhmsN - Channel 2 V- 55 C+ 150 C48 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V21.5 nCEnhancement Trenchfet, Powerpak
STL7N6LF3


MOSFET Automotive N-channel 60 V, 35 mOhm typ., 6.5 A STripFET F3 Power MOSFET in a PowerFLAT 5x6 package
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STMicroelectronics 5820
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AUD 0.775
Multiples of: 3000

20 A60 V35 mOhmsn - channel 1 V- 55 C+ 175 C52 Wsmd/smtPowerflat - 5X6 - 8Cut Tapesi1 channel20 V8.7 nCenhancementaec - q101stripfet
ATP203-TL-H


Trans MOSFET N-CH 30V 75A 3-Pin(2+Tab) ATPAK T/R
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ON Semiconductor 5820
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AUD 0.8597
Multiples of: 1

                   
PSMQC094N10NS2_R2_00201


MOSFETs 100V 9.4m ohms Excellent low FOM MOSFET for DC to DC Converter Application
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Panjit 5820
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AUD 0.943
Multiples of: 1

  9.4 mOhms        Reel , Cut TapeSi      
STU2NK100Z


Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; IPAK
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STMicroelectronics 5820
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AUD 0.9586
Multiples of: 3000

            supermesh      
PSMN059-150Y,115


NXP Semiconductors MOSFET Trans MOSFET N-CH 40V 75A 5-Pin
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Nexperia 911
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AUD 0.7749
Multiples of: 1

43 A150 V59 mOhmsN - Channel20 V - 55 C+ 150 C113 WSmd/SmtLFPAK - 4ReelSi1 Channel20 V Enhancement  
PSMN5R5-60YS,115


MOSFET N-CHANNEL 60V STD LEVEL MOSFET
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Nexperia 523
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AUD 2.1688
Multiples of: 1

   N - Channel  - 55 C+ 175 C Smd/SmtSOT - 669Reel       
BUK9Y14-80E,115


MOSFET N-channel TrenchMOS logic level FET
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Nexperia 190
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AUD 1.0869
Multiples of: 1

62 A80 V12.2 mOhmsN - Channel 1.7 V- 55 C+ 175 C147 WSmd/SmtLFPAK56 - 5ReelSi1 Channel15 V28.9 nCEnhancement  
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