MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BUK7Y102-100B,115


NXP Semiconductors MOSFET N-CHANNEL TRENCHMOS STANDARD LEVEL FET
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Nexperia 5820
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AUD 0.3944
Multiples of: 1

15 A100 V86 mOhmsN - Channel 2 V- 55 C+ 175 C60 WSmd/SmtLFPAK - 4ReelSi1 Channel10 V12.2 nCEnhancement  
FDMS7692


MOSFET PT7 30/20V Nch PowerTrench
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ON Semiconductor 5820
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AUD 0.3856
Multiples of: 3000

14 A30 V6.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C27 WSmd/SmtPOWER - 56ReelSi1 Channel20 V15 nCEnhancement Powertrench
UT6J3TCR


MOSFETs -20V Pch+Pch Si MOSFET
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ROHM 5820
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AUD 0.4101
Multiples of: 1

3 A20 V85 mOhmsP - Channel 1 V- 55 C+ 150 C2 WSMD/SMTDFN - 2020 - 8Reel , Cut TapeSi2 Channel- 8 V , 8 V8.5 nCEnhancement  
SIA975DJ-T1-GE3


MOSFET -12V 41mOhm@4.5V 4.5A P-Ch G-III
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Vishay 5820
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AUD 0.4123
Multiples of: 3000

   P - Channel  - 55 C+ 125 C Smd/SmtPOWERPAK SC - 70 - 6 DUALReel       
PJQ5458A-AU_R2_000A1


MOSFET 60V N-Channel Enhancement Mode MOSFET
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Panjit 5820
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AUD 0.4228
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16 A60 V50 mOhmsN - Channel 2.5 V- 55 C+ 175 C32.6 WSMD/SMTDFN5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V14 nCEnhancementAEC - Q101 
FDMS7698


MOSFET 30V N-Channel PowerTrench MOSFET
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ON Semiconductor 5820
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AUD 0.4322
Multiples of: 3000

13.5 A30 V8.1 mOhmsN - Channel 1 V- 55 C+ 150 C29 WSmd/SmtPOWER - 56ReelSi1 Channel20 V17 nCEnhancement Powertrench
SIA433EDJ-T1-GE3


P-Channel 20 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
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Vishay 5820
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AUD 0.454
Multiples of: 3000

12 A20 V15 mOhmsP - Channel 1.2 V- 55 C+ 150 C19 WSmd/SmtPOWERPAK SC - 70 - 6L S in GLEReelSi1 Channel12 V75 nCEnhancement Trenchfet, Powerpak
2SK536-MTK-TB-E


MOSFET MOSFET 0.1A 50V
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ON Semiconductor 5820
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AUD 0.4685
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100 mA50 V20 OhmsN - Channel      SOT - 23 - 3Reel       
SQJA37EP-T1_GE3


MOSFET -30V Vds -/+20V Vgs PowerPAK SO-8L
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Vishay 5820
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AUD 0.5059
Multiples of: 3000

30 A30 V9.2 mOhmsP - Channel 2.5 V- 55 C+ 175 C45 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V100 nCEnhancement  
SI1467DH-T1-GE3


MOSFET 20V 2.7A P-CH MOSFET
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Vishay 2235
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AUD 0.4501
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   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 363 - 6ReelSi     Trenchfet
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