MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Transistor Polarity
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Mounting Style
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STD2NC45-1


N-Channel 450 V 1.5A (Tc) 30W (Tc) Through Hole TO-251 (IPAK)
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STMicroelectronics 6292
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AUD 0.7472
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1.5 A450 V4.5 OhmsN - Channel30 V - 65 C+ 150 C30 WThrough HoleIPAK - 3TubeSi1 Channel30 V7 nCEnhancement Supermesh
DMN2053UW-7


MOSFET MOSFET BVDSS: 8V 24V SOT323 T&R 3K
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Diodes Incorporated 6286
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AUD 0.103
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           Cut Tape       
3LP01SS-TL-E


Trans MOSFET P-CH 30V 0.1A 3-Pin SSFP T/R
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ON Semiconductor 6279
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AUD 0.117
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100 mA- 30 V10.4 OhmsP - Channel      SMCP - 3Reel 1 Channel     
DMN3018SFG-7


MOSFET 30V N-Ch Enh Mode 25Vgss 1.0W 697pF
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Diodes Incorporated 6274
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AUD 0.1886
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8.5 A30 V21 mOhmsN - Channel25 V1.7 V- 55 C+ 150 C2.2 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel25 V13.2 nCEnhancement  
RW4C045BCTCL1


MOSFET MOSFET
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ROHM 6274
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AUD 0.5615
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4.5 A20 V56 mOhmsP - Channel 1.5 V + 150 C1.5 WSMD/SMTDFN1616 - 7TReel , Cut TapeSi1 Channel- 8 V , + 8 V6.5 nCEnhancement  
IRF7821TRPBF


MOSFET N Trench 30V 13.6A 1V @ 250uA 9.1 mΩ @ 13A,10V SOIC-8_150mil RoHS
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Infineon 6273
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AUD 0.6272
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13.6 A30 V9.5 mOhmsN - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V9.3 nC   
IPB180P04P403ATMA2


P-Channel 40V 180A (Tc) 150W (Tc) Surface Mount PG-TO263-7-3
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Infineon 6272
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AUD 3.2908
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          TO - 263 - 7 , D²PAK (6 Leads + Tab)Digi - Reel®Mosfet (Metal Oxide)      
SIZF906DT-T1-GE3


MOSFET 30V Vds 20V Vgs PowerPAIR F 6 x 5
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Vishay 6266
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AUD 1.0856
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60 A30 V3 mOhms , 900 uOhmsN - Channel 1.1 V- 55 C+ 150 C38 w , 83 WSmd/SmtPowerpair - 6X5 - 8Cut TapeSi2 Channel- 16 v , 20 V49 nC , 200 nCEnhancement Trenchfet
SSM3J325F,LF


Toshiba MOSFET P-Ch Small Signal 270pF -2A -20V 4.6nC
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Toshiba 6263
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AUD 0.0803
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- 2 A- 20 V311 mOhmsP - Channel - 0.3 v to - 1 V- 55 C+ 150 C600 mWSmd/SmtSC - 59 - 3ReelSi1 Channel8 V4.6 nC   
SQ4005EY-T1_BE3


MOSFET P-CHANNEL 12V
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Vishay 6260
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AUD 0.7615
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15 A12 V13 mOhmsP - Channel 1 V- 55 C+ 175 C6 WSMD/SMTSO - 8Trenchfet , Cut Tape , ReelSi1 Channel- 8 V , + 8 V29 nCEnhancement TrenchFET
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