MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR48ZTRPBF


MOSFET MOSFT 55V 62A 11mOhm 40nC Qg
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Infineon 7255
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AUD 0.6534
Multiples of: 1

62 A55 V11 mOhmsN - Channel 4 V + 175 C91 WSmd/SmtDPAKReelSi1 Channel 60 nC   
RQ1E050RPHZGTR


MOSFETs Pch -30V -5A Small Signal MOSFET: RQ1E050RPHZG is a MOSFET for switching applications. This is a high-reliability product of automotive grade qualified to AEC-Q101.
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ROHM 5820
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AUD 0.4597
Multiples of: 1

5 A30 V31 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.5 WSMD/SMTT SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V13 nCEnhancementAEC - Q101 
FDC653N


mosfet n trench 30v 5a 2v @ 250ua 35 m @ 5a,10v supersot-6 rohs
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ON Semiconductor 5820
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AUD 0.4821
Multiples of: 3000

                   
SISS23DN-T1-GE3


Vishay Semiconductors MOSFET -20V 4.5mOhm4.5V -50A P-Ch G-III
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Vishay 5820
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AUD 0.5095
Multiples of: 3000

- 50 A- 20 V4.5 mOhmsP - Channel - 0.4 v to - 0.9 V- 55 C+ 150 C57 WSmd/SmtPOWERPAK - 1212 - 8ReelSi1 Channel8 V93 nCEnhancement Trenchfet Power Mosfet
SUD09P10-195-GE3


Vishay Semiconductors MOSFET -100V 195mOhms 10V -8.8A
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Vishay 5820
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AUD 0.5692
Multiples of: 2000

8.8 A100 V195 mOhmsP - Channel 1 V- 55 C+ 150 C32.1 WSmd/SmtTO - 252 - 3ReelSi1 Channel- 10 V23.2 nCEnhancement Trenchfet
SIS990DN-T1-GE3


Vishay Semiconductors MOSFET 100V .085ohm10V 12.1A Dual N-Ch
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Vishay 5820
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AUD 0.6093
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12.1 A100 V86 mOhmsN - Channel 4 V- 55 C+ 150 C25 WSmd/SmtPOWERPAK - 1212 - 8ReelSi2 Channel20 V5.2 nC  Thunderfet Trenchfet
RV5C040APTCR1


MOSFET PCH -20V -4.0A MOSFET
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ROHM 5820
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AUD 0.6519
Multiples of: 1

4 A20 V85 mOhmsP - Channel 1 V- 55 C+ 150 C1.5 WSMD/SMTDFN1616 - 8Reel , Cut TapeSi1 Channel- 8 V , 0 V8.5 nCEnhancement  
STL11N3LLH6


STMicroelectronics MOSFET N-Ch 30V 0.006 Ohm 11A STripFET VI Deep
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STMicroelectronics 5820
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AUD 0.655
Multiples of: 3000

11 A30 V6 mOhmsN - Channel 1 V- 55 C+ 150 C50 WSmd/SmtPowerflat - 8ReelSi1 Channel+/- 20 V17 nC  Stripfet
SI7309DN-T1-GE3


MOSFET 60V 8.0A 19.8W 115mohm @ 10V
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Vishay 5820
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AUD 0.6935
Multiples of: 3000

   P - Channel  - 65 C+ 150 C Smd/SmtPOWERPAK 1212 - 8ReelSi     Trenchfet
ECH8663R-TL-H


MOSFET PCH+PCH 4V DRIVE SERIES
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ON Semiconductor 5815
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AUD 0.6058
Multiples of: 1

8 A30 V20.5 mOhmsN - Channel  - 55 C+ 150 C1.4 WSmd/SmtECH - 8Cut TapeSi2 Channel12 V    
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