MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2306BDS-T1-E3


MOSFET 30V 4.0A 0.75W
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Vishay 52016
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AUD 0.3151
Multiples of: 5

3.16 A30 V47 mOhmsN - Channel 1 V- 55 C+ 150 C0.75 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V3 nCEnhancement Trenchfet
SIA440DJ-T1-GE3


Vishay Semiconductors MOSFET 40V 26mOhm10V 12A N-CH
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Vishay 19969
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AUD 1.3099
Multiples of: 1

12 A40 V26 mOhmsN - Channel 1.4 V- 55 C+ 150 C19 WSmd/SmtPOWERPAK - SC - 70 - 6ReelSi 12 V14.3 nC  Trenchfet
RV7E040AJTCR1


MOSFETs Nch 30V 4A Middle Power MOSFET
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ROHM 5820
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AUD 0.2483
Multiples of: 1

4 A30 V45 mOhmsN - Channel 1.5 V- 55 C+ 150 C1.1 WSMD/SMTDFN - 1212 - 3Reel , Cut TapeSi1 Channel- 12 V , + 12 V4 nCEnhancement  
NX3008PBK.215


Transistor: P-MOSFET; unipolar; -30V; -0.23A; 420mW; SOT23
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Nexperia 5820
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AUD 0.2507
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NTTFS4C08NTAG


ON Semiconductor MOSFET Pwr MOSFET 30V 52A 5.9mOhm SGL N-CH
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ON Semiconductor 5820
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AUD 0.2635
Multiples of: 1500

52 A30 V5.9 mOhmsN - Channel     Smd/SmtWDFN - 8ReelSi1 Channel     
SIA483DJ-T1-GE3


MOSFET -30V 21mOhm@10V 12A P-Ch G-III
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Vishay 5820
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AUD 0.2599
Multiples of: 3000

12 A30 V16 mOhmsP - Channel 2.2 V- 55 C+ 150 C19 WSmd/SmtPOWERPAK SC - 70 - 6L S in GLEReelSi1 Channel20 V45 nCEnhancement Powerpak, Trenchfet
NTGS3446T1G


MOSFET 20V 5.1A N-Channel
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ON Semiconductor 5820
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AUD 0.272
Multiples of: 1

2.5 A20 V36 mOhmsN - Channel  - 55 C+ 150 C500 mW (1/2 w)Smd/SmtTSOP - 6ReelSi1 Channel12 V Enhancement  
SIA462DJ-T1-GE3


Vishay Semiconductors MOSFET 30V 18mOhm10V 12A N-Ch
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Vishay 5820
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AUD 0.2674
Multiples of: 3000

12 A30 V18 mOhmsn - channel20 V1.2 v to 2.4 V- 55 C+ 150 C19 Wsmd/smtPOWERPAK - SC - 70 - 6Reelsi  5 nCenhancement trenchfet power mosfet
STL6N2VH5


STMicroelectronics MOSFET N-Ch 20 V 0.025 Ohm 6 A STripFET V
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STMicroelectronics 2910
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AUD 0.334
Multiples of: 3000

6 A20 V31 mOhmsN - Channel8 V0.7 V- 55 C+ 150 C2.4 WSmd/SmtPowerflat - 6Reel   6 nCEnhancement Stripfet
SQ1421EDH-T1_GE3


MOSFET 60V (D-S) -/+20V AEC-Q101 Qualified
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Vishay 2289
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AUD 0.2697
Multiples of: 1

1.6 A60 V230 mOhmsP - Channel 2.5 V- 55 C+ 100 C2.7 WSmd/SmtSOT - 363 - 6Cut TapeSi1 Channel20 V5.4 nCEnhancementAec - Q101Trenchfet
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