MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMG1016VQ-7


MOSFET Comp Pair Enh FET 20Vdss 6Vgss
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 5820
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AUD 0.1925
Multiples of: 3000

         Smd/SmtSOT - 563 - 6Cut TapeSi    Aec - Q101 
SI8816EDB-T2-E1


Vishay Semiconductors MOSFET 30V 109mOhm10V 2.3A N-Ch
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Vishay 5820
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AUD 0.1979
Multiples of: 3000

2.3 A30 V109 mOhmsN - Channel 0.6 v to 1.4 V- 55 C+ 150 C900 mWSmd/SmtMICRO - FOOT - 4ReelSi 12 V2.4 nCEnhancement Trenchfet Power Mosfet
SI3417DV-T1-GE3


Vishay Semiconductors MOSFET -30V .0252ohm-10V -8A P-Ch T-FET
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Vishay 5820
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AUD 0.2024
Multiples of: 3000

8 A- 30 V30 mOhmsP - Channel - 3 V- 55 C+ 150 C4.2 WSmd/SmtTSOP - 6ReelSi1 Channel20 V32 nC  Trenchfet
SI1302DL-T1-GE3


MOSFET 30V Vds 20V Vgs SC70-3
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Vishay 5820
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AUD 0.2015
Multiples of: 1

           Cut TapeSi     Trenchfet
RTR020P02TL


MOSFET P-CH 20V 2A TSMT3
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ROHM 5820
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AUD 0.209
Multiples of: 3000

2 A30 V180 mOhmsP - Channel  - 55 C+ 150 C1 WSmd/SmtT SMT - 3ReelSi1 Channel12 V Enhancement  
DMN61D8LVTQ-7


Diodes Incorporated MOSFET N-Ch Enh Mode FET 41 to 60V Low Rdson
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Diodes Incorporated 5820
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AUD 0.2121
Multiples of: 3000

630 mA60 V2.4 OhmsN - Channel 1.3 V- 55 C+ 150 C1.09 WSmd/SmtTSOT - 26 - 6ReelSi1 Channel+/- 12 V0.74 nCEnhancementAec - Q101 
SSM6J424TU,LF


MOSFET Small Signal MOSFET P-ch VDSS=-20V VGSS=+6-8V ID=-6.0A RDSON=0.0225Ohm @ 4.5V in UF6 package
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Toshiba 5820
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AUD 0.2173
Multiples of: 1

           Cut Tape       
FDC637BNZ


Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
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ON Semiconductor 5820
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AUD 0.2201
Multiples of: 3000

            Powertrench®      
SI3457CDV-T1-GE3


P-Channel 30 V 5.1A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP
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Vishay 5820
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AUD 0.2257
Multiples of: 3000

5.1 A30 V74 mOhmsP - Channel 1 V- 55 C+ 150 C3 WSmd/SmtTSOP - 6Cut TapeSi1 Channel10 V10 nCEnhancement Trenchfet
FDC6303N


Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
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ON Semiconductor 5820
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AUD 0.2366
Multiples of: 3000

                   
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