MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SP2302DTS


SOT-23-6L MOSFETs ROHS
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Siliup 5820
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AUD 0.0382
Multiples of: 10

                   
WST3415A


SOT-23-3L MOSFETs ROHS
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Winsok 5820
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AUD 0.0417
Multiples of: 10

                   
BSD235CH6327XTSA1


Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W
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Infineon 5820
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AUD 0.0896
Multiples of: 3000

            Optimos 2      
BSS84-TP


BSS84, P-Channel Enhancement Mode Field Effect Transistor, SOT-23
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Micro Commercial Components (MCC) 5820
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AUD 0.0996
Multiples of: 20

                   
DMC2400UV-7


MOSFET 20V N P Ch 20VDSS 0.45W Low RDSon
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Diodes Incorporated 5820
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AUD 0.0998
Multiples of: 3000

1030 mA , 700 mA20 V480 mOhms , 970 mOhmsN - Channel, P - Channel 500 mV- 55 C+ 150 C1 WSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel5 V0.07 nC , 0.85 nCEnhancement  
SSM3J328RLF


Trans MOSFET P-CH 20V 6A 3-Pin SOT-23F
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Toshiba 5820
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AUD 0.1076
Multiples of: 3000

- 6 A- 20 V47.4 mOhmsP - Channel - 1 V- 55 C+ 150 C1 WSmd/SmtSOT - 23 - 3Reel 1 Channel8 V12.8 nC   
2N7000BU


MOSFET 60V N-Channel Sm Sig
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ON Semiconductor 5820
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AUD 0.1201
Multiples of: 1

   N - Channel  - 55 C+ 150 C Through HoleTO - 92Bulk       
2N7000_D75Z


MOSFET N-CHANNEL 60V 200mA
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ON Semiconductor 5820
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AUD 0.1315
Multiples of: 2000

200 mA60 V1.2 OhmsN - Channel  - 55 C+ 150 C400 mWThrough HoleTO - 92 - 3 K in KED LEADAmmo PackSi1 Channel20 V Enhancement  
SI8816EDB-T2-E1


Vishay Semiconductors MOSFET 30V 109mOhm10V 2.3A N-Ch
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Vishay 5820
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AUD 0.1374
Multiples of: 3000

2.3 A30 V109 mOhmsN - Channel 0.6 v to 1.4 V- 55 C+ 150 C900 mWSmd/SmtMICRO - FOOT - 4ReelSi 12 V2.4 nCEnhancement Trenchfet Power Mosfet
DMN2028UVT-7


N-Channel 20 V 6.2A (Ta) 1.2W (Ta) Surface Mount TSOT-23-6
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Diodes Incorporated 5820
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AUD 0.1454
Multiples of: 3000

6.2 A20 V20 mOhmsN - Channel 400 mV- 55 C+ 150 C1.2 WSmd/SmtTSOT - 26 - 6ReelSi1 Channel8 V8.3 nCEnhancement  
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