MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIA440DJ-T1-GE3


Vishay Semiconductors MOSFET 40V 26mOhm10V 12A N-CH
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 20163
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AUD 0.2914
Multiples of: 1

12 A40 V26 mOhmsN - Channel 1.4 V- 55 C+ 150 C19 WSmd/SmtPOWERPAK - SC - 70 - 6ReelSi 12 V14.3 nC  Trenchfet
Si2333CDS-T1-GE3


P-Channel 12 V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 10999
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AUD 0.1987
Multiples of: 5

7.1 A12 V35 mOhmsP - Channel 400 mV- 55 C+ 150 C2.5 WSmd/SmtSOT - 23 - 3ReelSi1 Channel4.5 V15 nCEnhancement Trenchfet
SIA477EDJT-T1-GE3


MOSFET -12V Vds 8V Vgs PowerPAK SC-70-6L
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Vishay 5820
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AUD 0.2368
Multiples of: 3000

- 12 A- 12 V0.011 OhmsP - Channel - 1 V- 55 C+ 150 C19 WSmd/SmtPOWERPAK - SC70 - 6Cut TapeSi1 Channel8 V83 nCEnhancement  
IPN65R1K5CEATMA1


Transistor: N-MOSFET; unipolar; 650V; 3.3A; 5W; PG-SOT223
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Infineon 5820
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AUD 0.1993
Multiples of: 3000

            coolmos ce      
SI2366DS-T1-GE3


Vishay Semiconductors MOSFET 30 Volts 5.8 Amps 2.1 Watts
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Vishay 5820
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AUD 0.2412
Multiples of: 3000

5.8 A30 V36 mOhmsN Channel 1.2 V- 55 C+ 150 C2.1 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V6.4 nCEnhancement Trenchfet
SI3993CDV-T1-GE3


MOSFET 20V 2.2A DUAL PCH
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Vishay 5820
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AUD 0.2504
Multiples of: 3000

2.2 A- 30 V133 mOhmsP - Channel20 V- 3 V- 55 C+ 150 C1.15 WSmd/SmtTSOP - 6ReelSi  3.1 nCEnhancement Trenchfet
SSM6J503NU,LF(T


Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
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Toshiba 5820
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AUD 0.2543
Multiples of: 6000

                   
SIA462DJ-T1-GE3


Vishay Semiconductors MOSFET 30V 18mOhm10V 12A N-Ch
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Vishay 5820
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AUD 0.2558
Multiples of: 3000

12 A30 V18 mOhmsn - channel20 V1.2 v to 2.4 V- 55 C+ 150 C19 Wsmd/smtPOWERPAK - SC - 70 - 6Reelsi  5 nCenhancement trenchfet power mosfet
STL6N2VH5


STMicroelectronics MOSFET N-Ch 20 V 0.025 Ohm 6 A STripFET V
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STMicroelectronics 5820
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AUD 0.2631
Multiples of: 3000

6 A20 V31 mOhmsN - Channel8 V0.7 V- 55 C+ 150 C2.4 WSmd/SmtPowerflat - 6Reel   6 nCEnhancement Stripfet
AO4286


Transistor: N-MOSFET; unipolar; 100V; 3A; 1.6W; SO8
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Alpha & Omega 5463
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AUD 0.2445
Multiples of: 1

                   
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