MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WNM2046A-3/TR


DFN-3L(1x0.6) MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Will Semiconductor 6377
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AUD 0.0469
Multiples of: 10

                   
BSS308PE-HXY


SOT-23 MOSFETs ROHS
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HXY MOS 6364
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AUD 0.0617
Multiples of: 10

                   
WSP9435


30V 5.4A 38mΩ@10V,5.4A 2.5W P Channel SOP-8 MOSFETs ROHS
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Winsok 6363
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AUD 0.1151
Multiples of: 5

                   
AOSP21321


Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8
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Alpha & Omega 6358
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AUD 0.1554
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SIRA06DDP-T1-UE3


MOSFETs N-CHANNEL 30-V (D-S) MOSFET
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Vishay 6357
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AUD 0.4435
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125 A30 V2.2 mOhmsN - Channel 2.2 V- 55 C+ 150 C59 WSMD/SMTSO - 8 Si1 Channel- 16 V , + 20 V31 nCEnhancement  
RSQ035N03HZGTR


MOSFET NCH 30V 3.5A SMALL SIGNAL MOSF
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ROHM 6356
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AUD 0.3892
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3.5 A30 V62 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.25 WSmd/SmtSC - 95 - 6Cut TapeSi1 Channel20 V5.3 nCEnhancementAec - Q101 
TM10N02MI


20V 9.8A 11m SOT-23-3L MOSFETs ROHS
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Tritech-MOS 6353
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AUD 0.0609
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IRFL024ZTRPBF


MOSFET N Trench 55V 5.1A 4V @ 250uA 57.5 mΩ @ 3.1A,10V SOT-223 RoHS
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Infineon 5878
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AUD 0.3684
Multiples of: 1

5.1 A55 V57.5 mOhmsN - Channel 4 V + 150 C2.8 WSmd/SmtSOT - 223ReelSi1 Channel 14 nC   
ZXMN4A06GTA


N-Channel 40 V 5A (Ta) 2W (Ta) Surface Mount SOT-223-3
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Diodes Incorporated 1494
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AUD 0.5413
Multiples of: 1

7 A40 V50 mOhmsN - Channel 1 V- 55 C+ 150 C3.9 WSmd/SmtSOT - 223 - 4Cut TapeSi1 Channel10 V18.2 nCEnhancement  
IRLML6302TRPBF


Transistor: P-MOSFET; unipolar; -20V; -0.78A; 0.54W; SOT23
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Infineon 150
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AUD 0.087
Multiples of: 5

   P - Channel     Smd/SmtSOT - 23Reel       
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