MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
3LN01SS-TL-E


ON Semiconductor MOSFET
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ON Semiconductor 6323
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.131

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150 mA30 V3.7 OhmsN - Channel     Smd/SmtSSFP - 3ReelSi1 Channel     
IRF644PBF


N-Channel 250 V 14A (Tc) 125W (Tc) Through Hole TO-220AB
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Vishay 6317
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between Fri. 21 Nov to Thu. 27 Nov
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AUD 1.0754

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14 A250 V280 mOhmsN - Channel 2 V- 55 C+ 150 C125 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V68 nCEnhancement  
TC6320K6-G


N and P channel enhancement mode MOSFET pair - 200V – DFN 8 - 37,400 mg - Low threshold - ...
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Microchip 6314
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between Fri. 21 Nov to Thu. 27 Nov
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AUD 1.5516

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1 A200 V7 Ohms , 8 OhmsN And P - Channel 1 V- 55 C+ 150 C Smd/SmtDFN - 8ReelSi2 Channel10 v , - 10 V Enhancement  
FDD2582


Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; TO252AA
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ON Semiconductor 6306
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.7665

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            Powertrench®      
KY4435


SOP-8 MOSFETs ROHS
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Kang Yang 6305
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.1277

Multiples of: 5

                   
NCE603S


MOSFET N & P Trench 60V 6.3A,6A 2.5V @ 250uA,3.5V @ 250uA 30 mΩ @ 6A,10V;80 mΩ @ 5A,10V SOP-8_150mil RoHS
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NCE Power 6305
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.2893

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BUK9245-55A,118


MOSFET TAPE13 MOSFET
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Nexperia 6305
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between Fri. 21 Nov to Thu. 27 Nov
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AUD 1.2577

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28 A55 V40 mOhmsN - Channel15 V - 55 C+ 175 C70 WSmd/SmtDPAK - 3ReelSi1 Channel15 V Enhancement  
DMTH10H010SPSQ-13


MOSFET MOSFET BVDSS: 61V~100V PowerDI5060-8 T&R 2.5K
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Diodes Incorporated 6299
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 1.2379

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100 A100 V8.8 mOhmsN - Channel 2 V- 55 C+ 175 C166 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel20 V56.4 nCEnhancementAec - Q101 
BSZ340N08NS3GATMA1


Infineon Technologies MOSFET N-Ch 80V 23A TSDSON-8 OptiMOS 3
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Infineon 6295
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.4452

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23 A80 V34 mOhmsN - Channel 2.8 V- 55 C+ 150 C32 WSmd/SmtTSDSON - 8Reel-1 Channel+/- 20 V6.8 nCEnhancement Optimos
TPM2019-3


20V 550mA 590mΩ@4.5V,550mA 280mW 750mV@250uA 5pF@10V P Channel 60pF@10V +150℃@(Tj) SOT-523 MOSFETs ROHS
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TECH PUBLIC 6292
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.0567

Multiples of: 10

                   
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