MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STR2P3LLH6


STMicroelectronics MOSFET
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STMicroelectronics 93120
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AUD 0.1752
Multiples of: 3000

2 A30 V56 mOhmsP - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 10 V6 nCEnhancement Stripfet
FDN302P


Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
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ON Semiconductor 78570
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AUD 0.1995
Multiples of: 1

   P Channel               
SI1416EDH-T1-GE3


30V 3.9A 58mO@10V,3.1A 2.8W N Channel SC-70-6(SOT-363) MOSFETs ROHS
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Vishay 8730
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AUD 0.1875
Multiples of: 3000

3.9 A30 V58 mOhmsN - Channel12 V1.4 V- 55 C+ 150 C2.8 WSmd/SmtSC - 70 - 6ReelSi1 Channel10 V7.5 nCEnhancement Trenchfet
DMP3050LVT-7


Diodes Incorporated MOSFET 30V P-CH MOSFET
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Diodes Incorporated 5820
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AUD 0.1612
Multiples of: 3000

- 4.5 A- 30 V50 mOhmsP - Channel - 2 V- 55 C+ 150 C1.8 WSmd/SmtTSOT26Reel-1 Channel+/- 25 V10.5 nCEnhancement  
ZXM61P03FTA


MOSFET 30V P-Chnl HDMOS
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Diodes Incorporated 5820
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AUD 0.1679
Multiples of: 3000

1.1 A30 V350 mOhmsP - Channel 1 V- 55 C+ 150 C806 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.8 nCEnhancement  
MC7252KDW-TP


MOSFET Dual N&P 150mW 60Vds 20Vgs 0.34A
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Micro Commercial Components (MCC) 5820
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AUD 0.1996
Multiples of: 1

           Cut Tape       
SIA477EDJT-T1-GE3


MOSFET -12V Vds 8V Vgs PowerPAK SC-70-6L
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Vishay 5820
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AUD 0.195
Multiples of: 3000

12 A12 V11 mOhmsP - Channel 1 V- 55 C+ 150 C19 WSMD/SMTPOWERPAK - SC70 - 6Reel , Cut TapeSi1 Channel- 8 V , 8 V83 nCEnhancement TrenchFET
SI8802DB-T2-E1


MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
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Vishay 5810
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AUD 0.1844
Multiples of: 1

3.5 A8 V54 mOhmsN - Channel 350 mV- 55 C+ 150 C0.9 WSmd/SmtMICRO - FOOT - 4ReelSi1 Channel4.5 V4.3 nCEnhancement Trenchfet
SI2371EDS-T1-GE3


Vishay Semiconductors MOSFET -30V 45mOhm10V -4.8A P-Ch G-III
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Vishay 5761
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AUD 0.1686
Multiples of: 5

4.8 A30 V45 mOhmsP - Channel 1.5 V- 55 C+ 150 C1.7 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 12 V , 12 V10.6 nCEnhancement TrenchFET
SI3433CDV-T1-GE3


MOSFET 20V 6.0A 3.3W 38mohm @ 4.5V
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Vishay 2170
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AUD 0.2119
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6Reel       
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