MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
MMBF2201NT1G


N-Channel 20 V 300mA (Ta) 150mW (Ta) Surface Mount SC-70-3 (SOT323)
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ON Semiconductor 17460
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AUD 0.1477
Multiples of: 3000

300 mA20 V1 OhmsN - Channel 1 V- 55 C+ 150 C150 mWSmd/SmtSC - 70 - 3ReelSi1 Channel10 V1.4 nCEnhancement  
STT4P3LLH6


STMicroelectronics MOSFET
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STMicroelectronics 14550
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AUD 0.2914
Multiples of: 3000

4 A30 V56 mOhmsP - Channel 1 V + 150 C1.6 WSmd/SmtSOT - 23 - 6ReelSi1 Channel- 10 V6 nCEnhancement Stripfet
2N7000_D75Z


MOSFET N-CHANNEL 60V 200mA
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ON Semiconductor 5820
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AUD 0.1325
Multiples of: 2000

200 mA60 V1.2 OhmsN - Channel  - 55 C+ 150 C400 mWThrough HoleTO - 92 - 3 K in KED LEADAmmo PackSi1 Channel20 V Enhancement  
SI3433CDV-T1-GE3


MOSFET 20V 6.0A 3.3W 38mohm @ 4.5V
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Vishay 5820
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AUD 0.1358
Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6Reel       
DMN2028UVT-7


N-Channel 20 V 6.2A (Ta) 1.2W (Ta) Surface Mount TSOT-23-6
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Diodes Incorporated 5820
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AUD 0.1276
Multiples of: 3000

6.2 A20 V20 mOhmsN - Channel 400 mV- 55 C+ 150 C1.2 WSmd/SmtTSOT - 26 - 6ReelSi1 Channel8 V8.3 nCEnhancement  
DMP2066LDM-7


P-Channel 20 V 4.6A (Ta) 1.25W (Ta) Surface Mount SOT-26
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Diodes Incorporated 5820
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AUD 0.1494
Multiples of: 3000

4.6 A20 V40 mOhmsp - channel  - 55 C+ 150 C1.25 Wsmd/smtSOT - 26 - 6Cut Tapesi1 channel12 V enhancement  
BS170_D26Z


MOSFET N-Ch Enhancement Mode Field Effect
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ON Semiconductor 5820
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AUD 0.1573
Multiples of: 2000

   N - Channel  - 55 C+ 150 C Through HoleTO - 92 - 3 K in KED LEADReel       
DMN3150LW-7


MOSFET 0.35W 28V 1.6A
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Diodes Incorporated 5820
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AUD 0.1662
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 323 - 3Reel       
SI8802DB-T2-E1


MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
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Vishay 5820
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AUD 0.1872
Multiples of: 1

3.5 A8 V54 mOhmsN - Channel 350 mV- 55 C+ 150 C0.9 WSmd/SmtMICRO - FOOT - 4ReelSi1 Channel4.5 V4.3 nCEnhancement Trenchfet
DMN3404LQ-7


MOSFET MOSFET BVDSS: 25V~30V SOT23 T&R 3K
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Diodes Incorporated 5820
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AUD 0.183
Multiples of: 3000

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