MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMG6968U-7


MOSFET N-CHANNEL ENHANCEMENT MODE
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Diodes Incorporated 12362
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AUD 0.0901
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6.5 A20 V25 mOhmsN - Channel 500 mV- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V8.5 nCEnhancement  
DMG1029SVQ-7


MOSFET MOSFET BVDSS: 41V~60V SOT563 T&R 3K
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Diodes Incorporated 5946
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AUD 0.2611
Multiples of: 5

500 mA , - 360 mA60 v , - 60 V1.7 Ohms , 4 OhmsN - Channel, P - Channel 1 v , - 3 V- 55 C+ 150 C1 WSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel20 V0.3 nC , 0.28 nCEnhancement  
TPM3012V1SX


12V 5A SOT-23 MOSFETs ROHS
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Shenzhen JingYang 5820
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AUD 0.0831
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DMN32D2LDF-7


Diodes Incorporated MOSFET 350mw 30V DUAL
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Diodes Incorporated 5820
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AUD 0.0905
Multiples of: 3000

400 mA30 V1.2 OhmsN - Channel  - 55 C+ 150 C280 mWSmd/SmtSOT - 353 - 5ReelSi2 Channel10 V Enhancement  
NVS4409NT1G


ON Semiconductor MOSFET
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ON Semiconductor 5820
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AUD 0.0961
Multiples of: 3000

700 mA25 V350 mOhmsN - Channel 650 mV- 55 C+ 150 C330 mWSmd/SmtSOT - 323 - 3Tape And ReelSi1 Channel4.5 V1.2 nCEnhancementAec - Q101 
WSP4435A


SOP-8 MOSFETs ROHS
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Winsok 5820
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AUD 0.1038
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IRLML5203TRPBF


MOSFET P Trench 30V 3A 2.5V @ 250uA 98 mΩ @ 3A,10V SOT-23 (SOT-23-3) RoHS
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Infineon 5820
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AUD 0.109
Multiples of: 3000

            Hexfet®      
IRLML0030TRPBF


MOSFET N Trench 30V 5.3A 2.3V @ 25uA 27 mΩ @ 5.2A,10V SOT-23 (SOT-23-3) RoHS
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Infineon 5820
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AUD 0.114
Multiples of: 3000

5.3 A30 V27 mOhmsN - Channel 1.3 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23ReelSi1 Channel10 V2.6 nCEnhancement  
YJQ13N03A


DFN2020-6L MOSFETs ROHS
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Yangjie 2395
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AUD 0.1203
Multiples of: 5

                   
YJJ05N06A


SOT-23-6L MOSFETs ROHS
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Yangjie 344
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AUD 0.1223
Multiples of: 5

                   
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