MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN2310UT-13


MOSFETs MOSFET BVDSS: 8V-24V SOT523 T&R 10K
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Diodes Incorporated 5887
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AUD 0.1121
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AOD468


MOSFET N Channel 300V 11.5A(Tc) 4.5V @ 250uA 420mO @ 6A,10V TO-252 RoHS
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Alpha & Omega 5887
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AUD 0.6498
Multiples of: 1

                   
SQ4050EY-T1_BE3


MOSFET N-CHANNEL 40V
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Vishay 5880
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AUD 0.7981
Multiples of: 1

19 A40 V6.3 mOhmsN - Channel 2.5 V- 55 C+ 175 C6 WSMD/SMTSO - 8Trenchfet , Cut Tape , ReelSi1 Channel- 20 V , + 20 V34 nCEnhancement TrenchFET
IQD020N10NM5ATMA1


MOSFETs N
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Infineon 5871
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AUD 3.7714
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276 A100 V2.05 mOhmsN - Channel 3.8 V- 55 C+ 175 C333 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V107 nCEnhancement  
NVMFD6H840NLT1G


Power MOSFET Dual N-Channel 80V 74A 6.9mOhm 8-Pin DFN Surface Mount T/R
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ON Semiconductor 5870
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AUD 1.8282
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74 A80 V6.9 mOhmsN - Channel 2 V- 55 C+ 175 C90 WSmd/SmtDFN - 8Cut TapeSi1 Channel20 V32 nCEnhancementAec - Q101 
KY2N7002K


60V 340mA 830mW 2.3Ω@10V,500mA N Channel SOT-23 MOSFETs ROHS
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Kang Yang 5868
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AUD 0.0143
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SSM3J15FV,L3F


MOSFET Small-signal MOSFET High Speed Switching
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Toshiba 5865
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AUD 0.0459
Multiples of: 1

100 mA30 V12 OhmsP - Channel 1.1 V + 150 C150 mWSmd/SmtSOT - 723 - 3Cut TapeSi1 Channel- 4 V Enhancement  
AOD4184-HXY


TO-252-2L MOSFETs ROHS
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HXY MOS 5863
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AUD 0.2039
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NSS085N100S


100V 100A 7.5m@10V,2A 2V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
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NH 5863
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AUD 0.3427
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WST4045


MOSFET SOT-23-3L RoHS
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Winsok 5655
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AUD 0.0905
Multiples of: 5

                   
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