MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AUIRFS8409-7P


Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK
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Infineon 6582
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AUD 12.4667
Multiples of: 1

522 A40 V0.75 mOhmsN - Channel20 V3 V- 55 C+ 175 C375 WSmd/SmtD2PAK - 7TubeSi1 Channel20 V305 nCEnhancementAec - Q101Coolirfet
PMZB1200UPEYL


P-Channel 30 V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006B-3
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Nexperia 6581
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AUD 0.0663
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         Smd/SmtDFN1006B - 3ReelSi      
SSM3J375F,LF


MOSFET P-CHANNEL VDSS:-20V VGSS:-8+6
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Toshiba 6579
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AUD 0.084
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           Cut Tape       
CJAC90SN12


MOSFET N Channel 120V 90A 4V @ 250uA 6.8mO @ 20A,10V PDFNWB5x6-8L RoHS
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Changjing Electronics Technology 6567
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AUD 1.2304
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WSD4080DN56


PDFN-8(5.9x5.2) MOSFETs ROHS
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Winsok 6565
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AUD 0.4551
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FDY1002PZ


MOSFET -20V DUAL P-CHAN POWERTRENCH
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ON Semiconductor 6564
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AUD 0.2441
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830 mA20 V500 mOhmsP - Channel  - 55 C+ 150 C625 mWSmd/SmtSC - 89 - 6ReelSi2 Channel8 V Enhancement Powertrench
IRF840BPBF-BE3


N-Channel 500V 8.7A (Tc) 156W (Tc) Through Hole TO-220AB
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Vishay 6558
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AUD 0.9237
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          TO - 220 - 3TubeMosfet (Metal Oxide)      
TM08H10S


100V 8A 100m SOP-8 MOSFETs ROHS
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Tritech-MOS 6557
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AUD 0.1541
Multiples of: 5

                   
TPH9R00CQ5,LQ


MOSFETs 150V U-MOS X-H SOP-Advance(N) 9mohm
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Toshiba 6547
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AUD 1.84
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64 A150 V9 mOhmsN - Channel 4.5 V  210 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V44 nCEnhancement  
DMNH6021SK3Q-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 6543
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AUD 0.5029
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         Smd/SmtTO - 252 - 3Cut TapeSi    Aec - Q101 
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