MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2301DS-L


SOT-23 MOSFETs ROHS
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TECH PUBLIC 5994
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AUD 0.0181
Multiples of: 20

                   
IRLMS2002TRPBF


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 5984
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AUD 0.1235
Multiples of: 5

                   
HXY3407AI


30V 4.1A 70mΩ@10V,3A P Channel SOT-23 MOSFETs ROHS
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HXY MOS 5975
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AUD 0.032
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LP3443LT1G


null 4.7A P Channel SOT-23E MOSFETs ROHS
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Leshan 5965
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AUD 0.0494
Multiples of: 10

                   
IRFR7546TRPBF


Transistor: N-MOSFET; unipolar; 60V; 71A; 99W; DPAK
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Infineon 5965
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AUD 0.4844
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71 A60 V8.5 mOhmsN - Channel20 V3.7 V- 55 C+ 175 C99 WSmd/SmtDPAK - 2ReelSi1 Channel20 V58 nC  Strongirfet
NX3008NBKMB


30V 800mA 155mW 450m@4.5V,0.5A 1.2V@250uA DFN-3L(1x0.6) MOSFETs ROHS
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TECH PUBLIC 5955
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AUD 0.0272
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PMV20XNER


N-Channel 30 V 5.7A (Ta) 510mW (Ta), 6.94W (Tc) Surface Mount TO-236AB
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Nexperia 5926
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AUD 0.2865
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7.2 A30 V23 mOhmsN - Channel12 V400 mV- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3ReelSi1 Channel4.5 V12.4 nCEnhancement  
IPD050N10N5ATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 5871
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AUD 1.5384
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80 A100 V4.3 mOhmsN - Channel 2.2 V- 55 C+ 175 C150 WSmd/SmtDPAK - 3Cut TapeSi1 Channel20 V64 nCEnhancement Optimos
TPM2030-3/TR


20V 950mA 200mO@4.5V,550mA 150mW N Channel SOT-723 MOSFETs ROHS
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TECH PUBLIC 5820
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AUD 0.0377
Multiples of: 20

                   
SI7101DN-T1-GE3


Vishay Semiconductors MOSFET -30V 7.2mOhm10V -35A P-Ch G-III
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Vishay 5417
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AUD 0.7999
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- 35 A- 30 V7.2 mOhmsP - Channel25 V- 1.2 v to - 2.5 V- 55 C+ 150 C52 WSmd/SmtPOWERPAK - 1212 - 8ReelSi1 Channel- 10 V43 nCEnhancement Trenchfet Power Mosfet
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