MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STL2N80K5


STMicroelectronics MOSFET N-Ch 800V 3.7Ohm typ 2A Zener-protected
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STMicroelectronics 5820
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AUD 0.7024
Multiples of: 3000

2 A800 V3.7 OhmsN - Channel+/- 30 V4 V- 55 C+ 150 C30 WSmd/SmtPowerflat - 8ReelSi1 Channel30 V3 nC  Mdmesh
2SK536-MTK-TB-E


MOSFET MOSFET 0.1A 50V
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ON Semiconductor 5820
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AUD 0.4965
Multiples of: 1

100 mA50 V20 OhmsN - Channel      SOT - 23 - 3Reel       
IRF720PBF-BE3


N-Channel 400V 3.3A (Tc) 50W (Tc) Through Hole TO-220AB
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Vishay 5820
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AUD 0.731
Multiples of: 1000

3.3 A400 V1.8 OhmsN - Channel 4 V- 55 C+ 150 C50 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V20 nCEnhancement  
SI7972DP-T1-GE3


MOSFET Dual N-Ch 30V Vds 7.1nC Qg Typ
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Vishay 5820
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AUD 0.7351
Multiples of: 3000

           Cut TapeSi      
SIS410DN-T1-GE3


MOSFET 20V Vds 20V Vgs PowerPAK 1212-8
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Vishay 5820
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AUD 0.4925
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8ReelSi     Trenchfet, Powerpak
SIR416DP-T1-GE3


MOSFET 40V 50A 69W 3.8mohm @ 10V
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Vishay 5820
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AUD 0.7649
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet, Powerpak
IRL520PBF-BE3


N-Channel 100V 9.2A (Tc) 60W (Tc) Through Hole TO-220AB
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Vishay 5820
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AUD 0.7859
Multiples of: 1000

9.2 A100 V270 mOhmsN - Channel 2 V- 55 C+ 175 C60 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 10 V , + 10 V12 nCEnhancement  
SQJ423EP-T1_BE3


MOSFETs P-CHANNEL 40-V (D-S) 175C MOSFET
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Vishay 5820
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AUD 0.7865
Multiples of: 1

           Reel , Cut TapeSi      
RQ7L055BGTCR


MOSFET MOSFET
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ROHM 5820
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AUD 0.7942
Multiples of: 1

5.5 A60 V29 mOhmsN - Channel 2.5 V + 150 C1.5 WSMD/SMTT SMT - 8Reel , Cut TapeSi1 Channel20 V7.6 nCEnhancement  
STL6P3LLH6


STMicroelectronics MOSFET
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STMicroelectronics 2910
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AUD 0.7142
Multiples of: 3000

6 A30 V30 mOhmsP - Channel20 V1 V- 55 C+ 150 C2.9 WSmd/SmtPowerflat - 8Cut TapeSi1 Channel20 V12 nCEnhancement Stripfet
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