MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVS4001NT1G


ON Semiconductor MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 5820
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AUD 0.2909
Multiples of: 3000

270 mA30 V1.5 OhmsN - Channel 800 mV- 55 C+ 150 C330 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel4 V0.9 nCEnhancementAec - Q101 
CMLDM7005 TR


MOSFET Small Signal Mosfet
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Central Semiconductor 5820
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AUD 0.3
Multiples of: 1

         Smd/SmtSOT - 563Cut TapeSi      
ZXMN2A14FTA


null 3.4A 60mO@3.4A,4.5V 1W null SOT-23 MOSFETs ROHS
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Diodes Incorporated 5820
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AUD 0.3017
Multiples of: 1

4.1 A20 V110 mOhmsN - Channel  - 55 C+ 150 C1 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel12 V Enhancement  
CMLDM3757 TR


Central Semiconductor MOSFET N&P Chan Comp Mosfets
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Central Semiconductor 5820
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AUD 0.3115
Multiples of: 1

540 mA20 V750 mOhmsN - Channel, P - Channel 1 V- 65 C+ 150 C350 mWSmd/SmtSOT - 563 - 6ReelSi2 Channel8 V1.58 nC , 1.2 nCEnhancement  
STL6N3LLH6


STMicroelectronics MOSFET N-Ch 30 V 0.021 Ohm 6 A STripFET VI DG
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STMicroelectronics 5820
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AUD 0.3289
Multiples of: 3000

6 A30 V40 mOhmsn - channel 1 V- 55 C+ 150 C2.4 Wsmd/smtPowerflat - 6Reelsi1 channel20 V3.6 nC  stripfet
DMN2016LFG-7


Diodes Incorporated MOSFET MOSFET N-CHANNEL DFN DFN3030-8 GREEN 3K
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Diodes Incorporated 5820
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AUD 0.3347
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5.2 A20 V30 mOhmsN - Channel8 V1.1 V- 55 C+ 150 C0.77 WSmd/SmtUDFN - 3030 - 8Reel   16 nCEnhancement  
SI3483CDV-T1-GE3


MOSFET -30V Vds 20V Vgs TSOP-6
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Vishay 5820
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AUD 0.3704
Multiples of: 3000

8 A30 V34 mOhmsP - Channel 1 V- 55 C+ 150 C4.2 WSmd/SmtTSOP - 6Cut TapeSi1 Channel10 V22 nCEnhancement Trenchfet
RTQ035N03HZGTR


MOSFET NCH 30V 3.5A SMALL SIGNAL MOSF
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ROHM 5820
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AUD 0.3924
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3.5 A30 V54 mOhmsN - Channel 1.5 V- 55 C+ 150 C1.25 WSmd/SmtSC - 95 - 6Cut TapeSi1 Channel12 V4.6 nCEnhancementAec - Q101 
SIA537EDJ-T1-GE3


Mosfet Array N and P-Channel 12V, 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
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Vishay 4753
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AUD 0.3422
Multiples of: 1

4.5 A12 v , - 20 V75 mOhmsN And P - Channel8 V1 V- 55 C+ 150 C7.8 WSmd/SmtSC - 70 - 6ReelSi2 Channel8 V10.5 nC , 16.3 nCEnhancement Trenchfet
AO4828


Trans MOSFET N-CH 60V 4.5A 8-Pin SOIC
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Alpha & Omega 603
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AUD 0.4137
Multiples of: 1

4.5 A  N    2 WSurface Mount      Enhancement  
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