MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIR870ADP-T1-GE3


MOSFET 100V 6.6mOhm@10V 60A N-Ch MV T-FET
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Vishay 14550
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AUD 1.7257
Multiples of: 3000

60 A100 V5.5 mOhmsN - Channel 1.5 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel20 V80 nCEnhancement Trenchfet, Powerpak
SI7634BDP-T1-GE3


MOSFET 30V 40A 48W 5.4mohm @ 10V
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Vishay 8730
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AUD 1.2593
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet
SIA456DJ-T1-GE3


MOSFET 200V 2.6A 19W 1.38ohm @ 4.5V
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Vishay 5820
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AUD 1.2326
Multiples of: 3000

2.6 A200 V1.38 OhmsN - Channel 600 mV- 55 C+ 150 C19 WSmd/SmtSC - 70ReelSi1 Channel4.5 V5 nCEnhancement Trenchfet, Powerpak
STL190N4F7AG


MOSFET LGS LV MOSFET
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STMicroelectronics 5820
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AUD 1.3431
Multiples of: 3000

120 A40 V1.68 mOhmsN - Channel 2 V- 55 C+ 175 C127 WSmd/SmtPowerflat - 8ReelSi1 Channel+/- 20 V41 nCEnhancementAec - Q101Stripfet
STL13N65M2


STMicroelectronics MOSFET
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STMicroelectronics 5820
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AUD 1.3769
Multiples of: 3000

6.5 A650 V365 mOhmsn - channel 2 V + 150 C52 Wsmd/smtPowerflat - 8Reelsi1 channel25 V17 nCenhancement mdmesh
IPP90R1K0C3XKSA1


Transistor: N-MOSFET; unipolar; 900V; 3.6A; 89W; PG-TO220-3
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Infineon 5820
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AUD 1.5472
Multiples of: 1

            coolmos      
SIDR870ADP-T1-GE3


MOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
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Vishay 5820
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AUD 1.4796
Multiples of: 1

95 A100 V10.5 mOhmsN - Channel 3 V- 55 C+ 150 C125 WSMD/SMTSOIC - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V25.5 nCEnhancement TrenchFET
STF7N80K5


STMicroelectronics MOSFET N-Ch 800V 0.95Ohm 6A MDmesh K5
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STMicroelectronics 5820
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AUD 1.6261
Multiples of: 1000

6 A800 V1.2 Ohmsn - channel 4 V- 55 C+ 150 C25 Wthrough holeTO - 220 - 3Tubesi1 channel30 V13.4 nC  mdmesh
FDMS3606AS


Fairchild Semiconductor MOSFET 30V Asymtrc Dual NCh PowerTrench MOSFET
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ON Semiconductor 5820
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AUD 1.776
Multiples of: 1

13 A , 27 A30 V8 mOhms , 1.9 mOhmsn - channel 2 v , 1.8 V- 55 C+ 150 C2.5 Wsmd/smtPOWER - 56 - 8Reelsi2 channel+/- 20 V59 nC , 27 nC  power stage powertrench syncfet
STL210N4F7AG


Trans MOSFET N-CH 40V 120A 8-Pin PowerFLAT
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STMicroelectronics 1227
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AUD 1.9869
Multiples of: 1

         Smd/SmtPowerflat - 5X6 - 8 Si    Aec - Q100 
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