MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STH145N8F7-2AG


MOSFET Automotive-grade N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
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STMicroelectronics 15520
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AUD 2.3918
Multiples of: 1000

90 A80 V4 mOhmsn - channel 2.5 V- 55 C+ 175 C200 Wsmd/smtH2PAK - 3 si1 channel+/- 20 V96 nCenhancement  
FDMA905P


12V 16A 12mΩ@4.5V,6.7A 2.5W 700mV@250uA 590pF@10V P Channel 2.7nF@10V 35nC@4.5V -55℃~+150℃@(Tj) DFN2x2-6L MOSFETs ROHS
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JSMSEMI 5818
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AUD 0.4214
Multiples of: 1

                   
IRFH5301TRPBF


International Rectifier MOSFET 30V 1 N-CH HEXFET 1.85mOhms 37nC
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Infineon 5818
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AUD 0.7166
Multiples of: 1

100 A30 V1.85 mOhmsN - Channel20 V1.8 V- 55 C+ 150 C3.6 WSmd/SmtPQFN - 8ReelSi1 Channel20 V77 nC   
AUIRF1324WL


International Rectifier MOSFET AUTO 24V 1 N-CH HEXFET 1.3mOhms
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Infineon 5818
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AUD 8.9478
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382 A24 V1.3 mOhmsN - Channel  - 55 C 300 WThrough HoleI2PAK - 3TubeSi1 Channel20 V120 nCEnhancementAec - Q101 
IPD90N10S406ATMA1


MOSFET MOSFET_75V 120V
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Infineon 5817
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AUD 1.9285
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           Cut Tape       
AP2714SD


1PCSN-Channel&1PCSP-Channel SOP-8 MOSFETs ROHS
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Quan Li 5816
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AUD 0.2791
Multiples of: 5

                   
RQ6E055BNTCR


MOSFET Nch 30V 5.5A Power MOSFET
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ROHM 5816
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AUD 0.3382
Multiples of: 1

5.5 A30 V19 mOhmsN - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 457 - 6Cut TapeSi1 Channel20 V8.6 nCEnhancement  
IQE050N08NM5SCATMA1


MOSFET
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Infineon 5816
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AUD 2.8462
Multiples of: 1

16 A80 V5 mOhmsN - Channel 3.8 V- 55 C+ 175 C2.5 WSMD/SMTWHSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V44 nCEnhancement  
TDNM3K50DWX


50V 500mV 2 N-Channel SOT-363 MOSFETs ROHS
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Shenzhen JingYang 5815
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AUD 0.0822
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IAUCN08S7N016TATMA1


MOSFETs 80 V, N-Ch, 1.63 mOhm max, Automotive MOSFET, top-side cooled SSO10T, OptiMOS 7
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Infineon 5768
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AUD 2.709
Multiples of: 1

262 A80 V1.63 mOhmsN - Channel 3.2 V- 55 C+ 175 C205 WSMD/SMTPG - LHDSO - 10 - 3Reel , Cut TapeSi1 Channel20 V83 nCEnhancement OptiMOS
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