MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN3027LFG-7


MOSFET N-Ch Enh Mode FET 30Vdss 25Vgss 70A
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Diodes Incorporated 5810
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AUD 0.4613
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5.3 A30 V13.5 mOhmsN - Channel 900 mV- 55 C+ 150 C1 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel+/- 25 V11.3 nCEnhancement  
SQJ423EP-T1_BE3


MOSFETs P-CHANNEL 40-V (D-S) 175C MOSFET
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Vishay 5810
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AUD 0.6851
Multiples of: 1

           Reel , Cut TapeSi      
PSMQC098N10LS2_R2_00201


MOSFETs 100V 9.8m ohms Excellect low FOM MOSFET for PD3.0 45W solution
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Panjit 5810
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AUD 0.8344
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60 A100 V9.8 mOhmsN - Channel 2.3 V- 55 C+ 175 C83 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V25 nCEnhancement  
IQE220N15NM5CGSCATMA1


MOSFETs TRENCH >=100V
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Infineon 5810
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AUD 1.9486
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           Reel , Cut TapeSi     OptiMOS
BUK7Y3R5-40HX


MOSFET, AEC-Q101, N-CH, 40V, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:115W; Transistor Case Style:SOT-669; No. of Pins:4Pins; Operating Temperature Max:175C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
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Nexperia 5808
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AUD 0.5326
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   N Channel               
SIR873DP-T1-GE3


TrenchFET Gen IV Power MOSFET P-Channel Single -150V VDS ±20V VGS -29A ID 8-Pin PowerPAK SOIC T/R
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Vishay 5807
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AUD 1.3399
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37 A150 V39.5 mOhmsP - Channel 4 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V25 nC  Trenchfet, Powerpak
IRFU9220PBF


P-Channel 200 V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
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Vishay 5806
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AUD 1.6418
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3.6 A200 V1.5 OhmsP - Channel 4 V- 55 C+ 150 C42 WThrough HoleTO - 251 - 3TubeSi1 Channel- 20 V , 20 V20 nCEnhancement  
SQJ844AEP-T1_GE3


MOSFET N-Channel 30V AEC-Q101 Qualified
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Vishay 5799
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AUD 0.7401
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8 A30 V13.8 mOhmsN - Channel 1.5 V- 55 C+ 175 C48 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi2 Channel20 V26 nCEnhancementAec - Q101Trenchfet
SI7309DN-T1-GE3


MOSFET 60V 8.0A 19.8W 115mohm @ 10V
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Vishay 5758
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AUD 0.8428
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   P - Channel  - 65 C+ 150 C Smd/SmtPOWERPAK 1212 - 8ReelSi     Trenchfet
RSR030N06HZGTL


MOSFET NCH 60V 3A SMALL SIGNAL MOSFET
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ROHM 5457
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AUD 0.4301
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3 A60 V85 mOhmsN - Channel 2.5 V- 55 C+ 150 C1 WSmd/SmtSC - 96 - 3Cut TapeSi1 Channel20 V5 nCEnhancementAec - Q101 
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