MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Transistor Polarity
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Minimum Operating Temperature
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQJ409EP-T1_BE3


MOSFETs P-CHANNEL 40-V (D-S) 175C MOSFET
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Vishay 5848
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AUD 1.0098
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           BulkSi      
ATP304-TL-H


MOSFET PCH 4.5V DRIVE SERIES
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ON Semiconductor 5844
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AUD 5.119
Multiples of: 10

- 100 A- 60 V6.5 mOhmsp - channel     smd/smtTO - 252 - 3Reelsi1 channel     
WSD2018BDN22


DFNWB-6-EP(2x2) MOSFETs ROHS
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Winsok 5840
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AUD 0.1853
Multiples of: 1

                   
30N06


60V 30A 23mΩ 2.5V N Channel TO-252 MOSFETs ROHS
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HL 5839
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AUD 0.0793
Multiples of: 5

                   
BSS225 H6327


Infineon Technologies MOSFET N-Ch 600V 90mA SOT-89-3
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Infineon 5837
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AUD 0.2916
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90 mA600 V28 OhmsN - Channel 1.3 V- 55 C+ 150 C1 WSmd/SmtSOT - 89 - 3Reel-1 Channel20 V5.8 nCEnhancement  
SISA12ADN-T1-GE3


Vishay Semiconductors MOSFET 30V 4.3mOhm10V 25A N-Ch
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Vishay 5834
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AUD 0.3133
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25 A30 V4.3 mOhmsN - Channel- 16 v , + 20 V1.1 V- 55 C+ 150 C28 WSmd/SmtPOWERPAK - 1212 - 8Reel-1 Channel- 16 v , 20 V29.5 nCEnhancement Trenchfet
SI7461DP-T1-E3


P-Channel 60 V 8.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
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Vishay 5826
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AUD 1.4079
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   P - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel       
RU1E002SPTCL


Trans MOSFET P-CH Si 30V 0.25A 3-Pin UMTF T/R
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ROHM 5580
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AUD 0.0678
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250 mA30 V900 mOhmsP - Channel 2.5 V- 55 C+ 150 C200 mWSmd/SmtSOT - 323FL - 3Cut TapeSi1 Channel20 V Enhancement  
BSC110N15NS5ATMA1


150V 76A 125W 11mO@38A,10V N Channel TDSON-8-7 MOSFETs ROHS
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Infineon 4850
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AUD 1.9542
Multiples of: 5000

76 A150 V11 mOhmsN - Channel 3 V- 55 C+ 150 C125 WSmd/SmtPG - TDSON - 8ReelSi1 Channel10 V28 nCEnhancement Optimos
DMP4013LFG-7


Diodes Incorporated MOSFET P-Ch 40V Enh Mode 60Vds 20Vgs 2569pF
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Diodes Incorporated 452
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AUD 0.3377
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13.7 A40 V13 mOhmsP - Channel 1 V- 55 C+ 150 C2.1 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel- 10 V68.6 nCEnhancement  
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