MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HT8KE6TB1


MOSFETs 100V 13A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KE6 is a low on-resistance MOSFET ideal for switching applications.
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ROHM 5739
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AUD 1.0639
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13 A100 V83 mOhmsN - Channel 2.5 V- 55 C+ 150 C14 WSMD/SMTH SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V6.7 nCEnhancement  
IRF7779L2TRPBF


Transistor: N-MOSFET; unipolar; 150V; 67A; 125W; DirectFET
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Infineon 5734
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AUD 4.3179
Multiples of: 1

            Hexfet®      
2KK6009DFN


MOSFET DFN1006-3 RoHS
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KEXIN 5732
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AUD 0.0347
Multiples of: 10

                   
RXL035N03TCR


MOSFET MOSFET
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ROHM 5732
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AUD 0.5058
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3.5 A30 V50 mOhmsN - Channel 2.5 V- 55 C+ 150 C1 WSMD/SMTSOT - 363T - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V3.3 nCEnhancement  
IQE065N10NM5SCATMA1


MOSFET
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Infineon 5730
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AUD 3
Multiples of: 1

13 A100 V6.5 mOhmsN - Channel 3.8 V- 55 C+ 175 C2.5 WSMD/SMTWHSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V43 nCEnhancement  
SP2006KT3


SOT-323 MOSFETs ROHS
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Siliup 5723
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AUD 0.0118
Multiples of: 50

                   
NVMYS3D3N06CLTWG


MOSFET 40V 3.3Ohm 123A Single N-Channel
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ON Semiconductor 5723
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AUD 1.0814
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           Cut Tape       
TN2130K1-G


Transistor: N-MOSFET; unipolar; 300V; 0.25A; 360mW; SOT23-3
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Microchip 5722
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AUD 0.584
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85 mA300 V25 OhmsN - Channel  - 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel20 V Enhancement  
AP3101A


30V 10A 16mΩ@20V,10A P Channel SOT23-3 MOSFETs ROHS
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Quan Li 4549
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AUD 0.1253
Multiples of: 10

                   
MMBF170


SOT-23 MOSFETs ROHS
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TECH PUBLIC 4190
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AUD 0.0199
Multiples of: 20

                   
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