MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTK3134NT1G


MOSFET 20V/6V N CH T1 890mA 0.3
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ON Semiconductor 5718
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AUD 0.1134
Multiples of: 5

890 mA20 V350 mOhmsN - Channel 450 mV- 55 C+ 150 C550 mWSmd/SmtSOT - 723 - 3Cut TapeSi1 Channel4.5 V Enhancement  
ZVN3306FTA


MOSFET Transistor - N Channel - 150 mA - 60 V - 5 ohm - 10 V - 2.4 V.
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Diodes Incorporated 5713
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AUD 0.1221
Multiples of: 5

150 mA60 V5 OhmsN - Channel 0.8 V- 55 C+ 150 C330 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
TPM2601C3


20V 2.3A 100mΩ@4.5V,2.3A 290mW 700mV@250uA 82pF@8V P Channel 640pF@8V +125℃@(Tj) SOT-323 MOSFETs ROHS
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TECH PUBLIC 5706
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AUD 0.0501
Multiples of: 10

                   
ZVN2106A


MOSFET Transistor - N Channel - 450 mA - 60 V - 2 ohm - 10 V - 2.4 V.
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Diodes Incorporated 5705
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AUD 0.3875
Multiples of: 1

450 mA60 V2 OhmsN - Channel 800 mV- 55 C+ 150 C700 mWThrough HoleTO - 92 - 3BulkSi1 Channel10 V Enhancement  
WST2333B


SOT-23N MOSFETs ROHS
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Winsok 5703
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AUD 0.0525
Multiples of: 10

                   
IPG20N06S4L14AATMA1


MOSFET MOSFET_40V 60V
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Infineon 5698
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AUD 0.8718
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   N - Channel     Smd/SmtTDSON - 8Cut TapeSi1 Channel   Aec - Q101 
SIR574DP-T1-BE3


MOSFETs N-Channel 150 V (D-S) MOSFET 150 C 13.8 m 10V
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Vishay 5693
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AUD 0.9867
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48.1 A150 V13.5 mOhmsN - Channel 4 V- 55 C+ 150 C78 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V31.5 nCEnhancement  
SISS5708DN-T1-BE3


MOSFETs N-Channel 150 V (D-S) MOSFET 150 C 23 m 10V
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Vishay 5667
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AUD 1.0754
Multiples of: 1

27 A150 V23 mOhmsN - Channel 4 V- 55 C+ 150 C65.7 WSMD/SMTPOWERPAK - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V12.8 nCEnhancement  
SIR576DP-T1-BE3


MOSFETs N-Channel 150 V (D-S) MOSFET 150 C 16 m 10V
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Vishay 5620
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AUD 0.903
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42.2 A150 V16 mOhmsN - Channel 4 V- 55 C+ 150 C71.4 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V25.2 nCEnhancement  
SIDR680ADP-T1-RE3


MOSFET N-Channel 80V D-S
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Vishay 121
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AUD 1.7239
Multiples of: 1

137 A80 V2.88 mOhmsN - Channel 3.5 V- 55 C+ 150 C125 WSMD/SMT Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V55 nCEnhancement TrenchFET
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