MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP3105LVT-7


MOSFET MOSFET BVDSS: 31V-40 TSOT23,3K
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Diodes Incorporated 8158
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AUD 0.1297
Multiples of: 1

3.9 A30 V75 mOhmsP - Channel  - 55 C+ 150 C1.15 WSmd/SmtTSOT26 - 6ReelSi1 Channel12 V19.8 nCEnhancement  
2N7002VC


SOT-563 MOSFETs ROHS
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TECH PUBLIC 7769
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AUD 0.0604
Multiples of: 10

                   
IRLMS1503TRPBF


Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
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Infineon 5718
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AUD 0.1822
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            Hexfet®      
SI7884BDP-T1-GE3


40V 90A 83W 4.2mΩ@10V N Channel DFN5060-8L MOSFETs ROHS
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JSMSEMI 5712
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AUD 0.6262
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IRFZ34PBF-BE3


N-Channel 60V 30A (Tc) 88W (Tc) Through Hole TO-220AB
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Vishay 5710
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AUD 1.4935
Multiples of: 1

30 A60 V50 mOhmsN - Channel 4 V- 55 C+ 175 C88 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V46 nCEnhancement  
NTPF190N65S3HF


MOSFET SUPERFET3 650V FRFET 190M
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ON Semiconductor 5710
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AUD 3.9231
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2 A650 V190 mOhmsN - Channel 3 V- 55 C+ 150 C36 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V34 nCEnhancement Superfet Iii
SISS30LDN-T1-UE3


MOSFETs N-Channel 80 V (D-S) MOSFET 150 C 8.5 m 10V 12.2 m 4.5V
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Vishay 5659
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AUD 0.7175
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55.5 A80 V8.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C57 WSMD/SMTPOWERPAK - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V32.5 nCEnhancement  
DMN6140L-7


Diodes Incorporated MOSFET 31V to 99V N-Ch FET 60Vds 20Vgs 2.3A
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Diodes Incorporated 4874
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AUD 0.0762
Multiples of: 5

2.3 A60 V140 mOhmsN - Channel20 V3 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V8.6 nCEnhancement  
FDS4435BZ


30V 9A 2.5W 20mΩ@10V P Channel SOP-8 MOSFETs ROHS
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HXY MOS 3433
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AUD 0.1463
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DMNH4006SK3Q-13


MOSFET 40V N-Ch Enh Mode AEC-Q101
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Diodes Incorporated 1606
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AUD 0.9851
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140 A40 V6 mOhmsN - Channel 2 V- 55 C+ 175 C3.6 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V51 nCEnhancementAec - Q101 
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