MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3414A


MOSFET N Trench 20V 4.2A 1.2V @ 50uA 35 mΩ @ 3.6A,4.5V SOT-23 RoHS
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Youtai 18216
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AUD 0.0228
Multiples of: 20

                   
SIR178DP-T1-RE3


MOSFET 20V N-CHANNEL (D-S) MOS
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Vishay 5682
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AUD 1.2705
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430 A20 V310 uOhmsN - Channel 1.5 V- 55 C+ 150 C104 WSMD/SMTPOWERPAK - SO - 8Cut Tape , ReelSi1 Channel- 8 V , + 12 V207 nCEnhancement TrenchFET
IRF830APBF-BE3


MOSFET 500V N-CH MOSFET
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Vishay 5679
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AUD 1.6577
Multiples of: 1

5 A500 V1.4 OhmsN - Channel 4.5 V- 55 C+ 150 C74 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 30 V , + 30 V24 nCEnhancement  
BSS138PW,115


N-Channel 60 V 320mA (Ta) 260mW (Ta), 830mW (Tc) Surface Mount SOT-323
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Nexperia 5672
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AUD 0.0525
Multiples of: 1

320 mA60 V1.6 OhmsN - Channel 900 mV- 55 C+ 150 C310 mWSmdsmtSOT - 323 - 3ReelSi1 Channel10 V0.72 nCEnhancement  
SQ3457EV-T1_BE3


MOSFET P-CHANNEL 30V D-S
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Vishay 5672
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AUD 0.4731
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6.8 A30 V35 mOhmsP - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V14 nCEnhancement TrenchFET
DMP32D4SFB-7B


MOSFET 30V P-CH MOSFET
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Diodes Incorporated 5671
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AUD 0.0759
Multiples of: 1

400 mA30 V2.4 OhmsP - Channel 2.3 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtX1 - DFN1006 - 3Cut TapeSi1 Channel20 V1.3 nCEnhancement  
STD30NF06L


TO-252 MOSFETs ROHS
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Youtai 5671
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AUD 0.2671
Multiples of: 5

                   
IPP60R360P7XKSA1


Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO220-3
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Infineon 5659
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AUD 0.8685
Multiples of: 1

            Coolmos P7      
BSR802N L6327


MOSFET OptiMOS 2 Sm-Signal Transistor N-CH
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Infineon 5612
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AUD 0.2348
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3.7 A20 V23 mOhmsN - Channel 300 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSC - 59 - 3ReelSi1 Channel2.5 V4.7 nCEnhancement  
DMG3415U-7


MOSFET P-CHANNEL ENHANCEMENT MODE
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Diodes Incorporated 5092
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AUD 0.0951
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4 A20 V42.5 mOhmsP - Channel 300 mV- 55 C+ 150 C900 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V9.1 nCEnhancement  
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