MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN2028UVT-7


N-Channel 20 V 6.2A (Ta) 1.2W (Ta) Surface Mount TSOT-23-6
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Diodes Incorporated 5820
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AUD 0.1567
Multiples of: 3000

6.2 A20 V20 mOhmsN - Channel 400 mV- 55 C+ 150 C1.2 WSmd/SmtTSOT - 26 - 6ReelSi1 Channel8 V8.3 nCEnhancement  
DMP2066LDM-7


P-Channel 20 V 4.6A (Ta) 1.25W (Ta) Surface Mount SOT-26
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Diodes Incorporated 5820
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AUD 0.1683
Multiples of: 3000

4.6 A20 V40 mOhmsp - channel  - 55 C+ 150 C1.25 Wsmd/smtSOT - 26 - 6Cut Tapesi1 channel12 V enhancement  
FDC610PZ


MOSFET -30V P-CHANNEL
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ON Semiconductor 5820
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AUD 0.173
Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtSSOT - 6Reel       
2N7000_D75Z


MOSFET N-CHANNEL 60V 200mA
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ON Semiconductor 5820
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AUD 0.1732
Multiples of: 2000

200 mA60 V1.2 OhmsN - Channel  - 55 C+ 150 C400 mWThrough HoleTO - 92 - 3 K in KED LEADAmmo PackSi1 Channel20 V Enhancement  
SI1021R-T1-GE3


MOSFET 60V 190mA 250mW 700mohm @ 4.5V
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Vishay 5820
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AUD 0.1778
Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtSC - 75A - 3Reel      Trenchfet
DMN3016LFDE-7


Diodes Incorporated MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm
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Diodes Incorporated 5820
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AUD 0.1835
Multiples of: 3000

10 A30 V16 mOhmsN - Channel 1.4 V- 55 C+ 150 C2.02 WSmd/SmtU - DFN2020 - 6Reel-1 Channel+/- 20 v , +/- 20 V25.1 nCEnhancement  
SI2301BDS-T1-E3


MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3
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Vishay 5820
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AUD 0.1885
Multiples of: 3000

2.2 A- 20 V100 mOhmsP - Channel8 V - 55 C+ 150 C700 mWSmd/SmtSOT - 23 - 3Reel    Enhancement  
DMN3150LW-7


MOSFET 0.35W 28V 1.6A
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Diodes Incorporated 5820
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AUD 0.1952
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 323 - 3Reel       
FDS8949


SOP-8 MOSFETs ROHS
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TECH PUBLIC 5820
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AUD 0.2066
Multiples of: 5

                   
SSM3J16FS(TE85L,F)


Transistor: P-MOSFET; unipolar; -20V; -0.1A; 0.1W; SC75
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Toshiba 0
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AUD 0.16
Multiples of: 15000

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