MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM6K516NU,LF


N-Channel 30V 6A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2)
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Toshiba 5669
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AUD 0.1436
Multiples of: 3000

6 A30 V46 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.25 WSMD/SMTUDFN - 6BReel , Cut TapeSi1 Channel- 12 V , + 20 V2.5 nCEnhancement  
SIRA10DDP-T1-GE3


MOSFETs 30V Vds TrenchFET PowePAK SO-8
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Vishay 5669
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AUD 0.3362
Multiples of: 1

96 A30 V3.1 mOhmsN - Channel 2.4 V- 55 C+ 150 C43 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 16 V , + 20 V24.1 nCEnhancement  
ZXMN6A25KTC


MOSFET N-Chan 60V MOSFET (UMOS)
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Diodes Incorporated 5668
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AUD 0.6452
Multiples of: 1

10.7 A60 V50 mOhmsN - Channel  - 55 C+ 150 C2.11 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V Enhancement  
WSF09N20G


TO-252-2 MOSFETs ROHS
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Winsok 5667
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AUD 0.4551
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IRFZ24PBF-BE3


N-Channel 60V 17A (Tc) 60W (Tc) Through Hole TO-220AB
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Vishay 5665
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AUD 1.0058
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          TO - 220 - 3TubeMosfet (Metal Oxide)      
FSS2300 2300


SOT-23-3L MOSFETs ROHS
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FOSAN 5664
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AUD 0.0282
Multiples of: 20

                   
TMN40100AD


TO-252-3L MOSFETs ROHS
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Tritech-MOS 5664
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AUD 0.1639
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NVMFS5C604NT1G


MOSFETs NFET SO8FL 60V 287A 12MO
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ON Semiconductor 2564
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AUD 6.9448
Multiples of: 1

288 A60 V1.2 mOhmsN - Channel 4 V- 55 C+ 175 C200 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V80 nCEnhancement  
WST2339


MOSFET P Trench 20V 7.1A 1V @ 250uA 19 mΩ @ 4A,4.5V SOT-23 (SOT-23-3) RoHS
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Winsok 2206
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AUD 0.1396
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RQ5E030RPTL


P-Channel 30 V 3A (Ta) 700mW (Ta) Surface Mount TSMT3
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ROHM 1498
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AUD 0.2627
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3 A30 V75 mOhmsP - Channel 1 V- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel20 V5.2 nCEnhancement  
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