MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SISS30LDN-T1-UE3


MOSFETs N-Channel 80 V (D-S) MOSFET 150 C 8.5 m 10V 12.2 m 4.5V
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Vishay 5652
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AUD 0.7417
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55.5 A80 V8.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C57 WSMD/SMTPOWERPAK - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V32.5 nCEnhancement  
TMN30150NF


PDFN5x6-8L MOSFETs ROHS
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Tritech-MOS 5650
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AUD 0.3462
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SQ3989EV-T1_BE3


MOSFETs DUAL P-CHANNEL 30-V (D-S) 175C MOSFET
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Vishay 5646
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AUD 0.3174
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           Reel , Cut TapeSi      
SIR572DP-T1-BE3


MOSFETs N-Channel 150 V (D-S) MOSFET 150 C 10.8 m 10V
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Vishay 5646
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AUD 1.4237
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59.7 A150 V10.8 mOhmsN - Channel 4 V- 55 C+ 150 C92.5 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V35.9 nCEnhancement  
2N7002KD


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 2 N-Channel SOT-363 MOSFETs ROHS
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ElecSuper 5645
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AUD 0.0264
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SISS10ADN-T1-BE3


MOSFETs POWRPK N CHAN 40V
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Vishay 5645
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AUD 0.6694
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109 A40 V2.65 mOhmsN - Channel 2.4 V- 55 C+ 150 C56.8 WSMD/SMTPOWERPAK - 1212 - 8SReel , Cut TapeSi1 Channel- 16 V , + 20 V40.5 nCEnhancement  
SISS5708DN-T1-BE3


MOSFETs N-Channel 150 V (D-S) MOSFET 150 C 23 m 10V
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Vishay 5619
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AUD 1.1864
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27 A150 V23 mOhmsN - Channel 4 V- 55 C+ 150 C65.7 WSMD/SMTPOWERPAK - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V12.8 nCEnhancement  
FDMC86116LZ


MOSFET 100V/20V w/Zener NCH PowerTrench MOSFET
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ON Semiconductor 5614
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AUD 0.747
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3.3 A100 V103 mOhmsN - Channel  - 55 C+ 150 C19 WSmd/SmtPOWER 33ReelSi 20 V2 nC , 4 nC  Powertrench
Hot IRF9540NSTRLPBF


Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
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Infineon 5239
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AUD 1.0318
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23 A100 V117 mOhmsP - Channel    3.8 WSmd/SmtD2PAKReelSi1 Channel20 V64.7 nC   
FDB5800


Transistor: N-MOSFET; unipolar; 60V; 80A; 242W; D2PAK
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ON Semiconductor 664
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AUD 4.2
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