MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLL024ZTRPBF


MOSFET MOSFT 55V 5A 60mOhm 7nC Log Lvl
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Infineon 5609
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AUD 0.3825
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5 A55 V60 mOhmsN - Channel 3 V + 150 C3.8 WSmd/SmtSOT - 223ReelSi1 Channel 11 nC   
PMV50ENEAR


MOSFET PMV50ENEA/TO-236AB/REEL 7" Q3/
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Nexperia 5608
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AUD 0.179
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3.9 A30 V30 mOhmsN - Channel 1 V- 55 C+ 150 C3.9 WSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V10 nCEnhancement  
TPM2008EP3


20V 700mA 130mΩ@4.5V,650mA 100mW 750mV@250uA 15pF@16V N Channel 120pF@16V +150℃@(Tj) DFN1006-3L MOSFETs ROHS
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TECH PUBLIC 5607
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AUD 0.0309
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BSC020N03LSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 28A; 96W; PG-TDSON-8
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Infineon 5607
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AUD 0.6025
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            Optimos 3      
2N7002KW


SOT-323-3 MOSFETs ROHS
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Bourne 5606
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AUD 0.0212
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DMN3053L-7


MOSFET 30V N-Ch Enh FET 12Vgss 0.76W 676pF
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Diodes Incorporated 5606
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AUD 0.0881
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4 A30 V45 mOhmsN - Channel 600 mV- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V17.2 nCEnhancement  
IRFR110PBF


N-Channel 100 V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
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Vishay 5604
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AUD 0.5188
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   N Channel       Tube       
PSMQC040N08NS2_R2_00201


MOSFETs 80V 4.4m ohms Best-in-Class FOM MOSFET for DC to DC converter
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Panjit 5601
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AUD 1.279
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102 A80 V4 mOhmsN - Channel 3.8 V- 55 C+ 175 C83 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V36 nCEnhancement  
SI2304-TP


MOSFET N-Channel Enhancement Mode Field Effect Transistor
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Micro Commercial Components (MCC) 5596
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AUD 0.1133
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2.5 A30 V65 mOhmsN - Channel 1 V- 55 C+ 150 C250 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V10 nCEnhancement  
TK6P60W,RVQ


Toshiba MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC
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Toshiba 5572
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AUD 1.6155
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6.2 A600 V680 mOhmsN - Channel 2.7 v to 3.7 V- 55 C+ 150 C60 WSmd/SmtDPAK - 3ReelSi1 Channel30 V12 nCEnhancement  
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