MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI4835DDY-T1-GE3


MOSFET 30V 13A 5.6W 1.8mohm @ 10V
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Vishay 5509
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AUD 0.3004
Multiples of: 5

   P - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReel       
SI4948BEY


SOP-8 MOSFETs ROHS
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TECH PUBLIC 5504
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AUD 0.415
Multiples of: 1

                   
PSMQC078N10LS2_R2_00201


MOSFETs 100V 7.8m ohms Excellect low FOM MOSFET for PD3.0 65W solution
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Panjit 5504
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AUD 1.035
Multiples of: 1

63 A100 V7.8 mOhmsN - Channel 2.3 V- 55 C+ 150 C65 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V30 nCEnhancement  
DMG301NU-13


MOSFET 25V N-Ch ENH FET 25Vds 8Vgs 0.32W
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Diodes Incorporated 5504
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AUD 0.1126
Multiples of: 5

260 mA25 V4 OhmsN - Channel 700 mV- 55 C+ 150 C320 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V360 pCEnhancement  
NTMFS4898NFT3G


Trans MOSFET N-CH 30V 36.7A 8-Pin SO-FL T/R
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ON Semiconductor 5500
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AUD 1.1075
Multiples of: 1

           Tape And Reel    enhancement  
SSM6K518NU,LF


N-Channel 20V 6A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2)
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Toshiba 5498
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AUD 0.2044
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6 A20 V108 mOhmsN - Channel 1 V- 55 C+ 150 C1.25 WSMD/SMTUDFN - 6BReel , Cut TapeSi1 Channel- 8 V , + 8 V3.6 nCEnhancement  
RQ3E160ADTB


MOSFET Nch 30V 16A Middle Power MOSFET
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ROHM 5498
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AUD 0.399
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16 A30 V3.5 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtH SMT - 8ReelSi1 Channel+/- 20 V51 nCEnhancement  
SIR516DP-T1-BE3


MOSFETs N-Channel 100 V (D-S) MOSFET 150 C 8 m 10V
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Vishay 5451
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AUD 1.1772
Multiples of: 1

63.7 A100 V8 mOhmsN - Channel 4 V- 55 C+ 150 C71.4 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V23.6 nCEnhancement  
PSMN012-80BS,118


N-Channel 80 V 74A (Tc) 148W (Tc) Surface Mount D2PAK
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Nexperia 5297
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AUD 1.1066
Multiples of: 1

74 A73 V11 mOhmsN - Channel    148 WThrough HoleD2PAKReelSi1 Channel20 V    
BSZ075N08NS5


MOSFET TRENCH 40<-<100V
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Infineon 226
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AUD 0.7701
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