MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTUD3170NZT5G


MOSFET 20V Trench N-Channel
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 20972
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AUD 0.1625
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220 mA20 V1.5 OhmsN - Channel 400 mV- 55 C+ 150 C125 mW (1/8 w)Smd/SmtSOT - 963ReelSi2 Channel4.5 V Enhancement  
DN3135K1-G


Transistor: N-MOSFET; unipolar; 350V; 0.18A; 360mW; SOT23-3
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Microchip 5468
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AUD 0.8094
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72 mA350 V35 OhmsN - Channel  - 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel20 V Depletion  
ST2304


30V 3.2A 50mΩ@10V,3.2A 1.25W N Channel SOT-23-3L MOSFETs ROHS
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STANSON Tech 5462
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AUD 0.0457
Multiples of: 10

                   
BAS70W-05


SOT-323 MOSFETs ROHS
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SLKORMICRO 5459
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AUD 0.0243
Multiples of: 20

                   
RT1E050RPTR


MOSFET 4V Drive Pch MOSFET Drive Pch
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ROHM 5456
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AUD 0.4366
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5 A30 V26 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.25 WSmd/SmtTSST - 8Cut TapeSi1 Channel20 V13 nCEnhancement  
RQ3E150GNTB


N-Channel 30 V 15A (Ta) 2W (Ta), 17.2W (Tc) Surface Mount 8-HSMT (3.2x3)
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ROHM 5451
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AUD 0.2758
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15 A30 V6.1 mOhmsN - Channel 2.5 V- 55 C+ 150 C2 WSmd/SmtH SMT - 8ReelSi1 Channel20 V15.3 nC   
AON6482


Transistor: N-MOSFET; unipolar; 100V; 18A; 25W; DFN5x6
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Alpha & Omega 5451
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AUD 1.3101
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IRF640NPBF


200V 18A 150mΩ@10V,11A 150W 4V@250uA N Channel +175℃@(Tj) TO-220C MOSFETs ROHS
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JSMSEMI 5446
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AUD 0.3337
Multiples of: 5

                   
TPM7002ER3


60V 300mA 1.8Ω@10V,300mA 350mW 1.6V@250uA 2pF@30V N Channel 27pF@30V 1.7nC@4.5V -55℃~+150℃@(Tj) SOT-523 MOSFETs ROHS
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TECH PUBLIC 5442
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AUD 0.0442
Multiples of: 10

                   
IRF7451TRPBF


Transistor: N-MOSFET; unipolar; 150V; 3.6A; 2.5W; SO8
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Infineon 5364
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AUD 0.6699
Multiples of: 1

   N - Channel     Smd/SmtSOIC - 8Reel       
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