MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPN70R1K4P7SATMA1


MOSFET CONSUMER
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 7526
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AUD 0.2545
Multiples of: 1

4 A700 V1.15 OhmsN - Channel 2.5 V- 40 C+ 150 C6.2 WSmd/SmtPG - SOT - 223 - 3Cut TapeSi1 Channel16 V4.7 nCEnhancement Coolmos
FDN339AN


SOT-23 MOSFETs ROHS
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TECH PUBLIC 5432
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AUD 0.0835
Multiples of: 10

                   
IRL2910STRLPBF


N-Channel 100 V 55A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK
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Infineon 5432
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AUD 1.7944
Multiples of: 800

55 A100 V260 mOhmsN - Channel    3.8 WSmd/SmtD2PAKReelSi1 Channel16 V93.3 nC   
FQD11P06TM


P-Channel 60 V 9.4A (Tc) 2.5W (Ta), 38W (Tc) Surface Mount TO-252AA
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ON Semiconductor 5430
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AUD 0.7356
Multiples of: 500

            Qfet®      
STP36N55M5


N-Channel 550 V 33A (Tc) 190W (Tc) Through Hole TO-220
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STMicroelectronics 5430
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AUD 6.7794
Multiples of: 1

20.8 A550 V80 mOhmsN - Channel 5 V  190 WThrough HoleTO - 220TubeSi1 Channel25 V72 nC  Mdmesh
STT6N3LLH6


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 5429
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AUD 0.1333
Multiples of: 5

                   
SI7465DP-T1-GE3


MOSFET 60V 5.0A 3.5W 64mohm @ 10V
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Vishay 5428
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AUD 0.5982
Multiples of: 1

3.2 A60 V64 mOhmsP - Channel 1 V- 55 C+ 150 C1.5 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel- 10 V26 nCEnhancement Trenchfet
BUK7M5R0-40HX


N-Channel 40V 85A (Tj) 83W Surface Mount LFPAK33
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Nexperia 5426
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AUD 0.5237
Multiples of: 1

          SOT - 1210 , 8 - LFPAK33 (5 - LEAD)Tape And ReelMosfet (Metal Oxide)      
SUM65N20-30-E3


MOSFET 200V 65A 375W 30mohm @ 10V
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Vishay 1657
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AUD 3.9731
Multiples of: 1

   N - Channel  - 55 C+ 175 C Smd/SmtTO - 263 - 3Reel       
PSMN4R3-30BL,118


MOSFET Std N-chanMOSFET
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Nexperia 0
6 to 16 Weeks Calender.png

AUD 0.9407
Multiples of: 1

80 A30 V4.1 mOhmsN - Channel  - 55 C+ 175 C103 WThrough HoleD2PAKReelSi1 Channel20 V    
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