MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM3K15AMFV,L3F(T


SOT-723 MOSFETs ROHS
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Toshiba 20098
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AUD 0.0238
Multiples of: 20

                   
TMN40100NF


PDFN5x6-8L MOSFETs ROHS
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Tritech-MOS 5538
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AUD 0.1884
Multiples of: 5

                   
SSM6K518NU,LF


N-Channel 20V 6A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2)
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Toshiba 5498
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AUD 0.2044
Multiples of: 1

6 A20 V108 mOhmsN - Channel 1 V- 55 C+ 150 C1.25 WSMD/SMTUDFN - 6BReel , Cut TapeSi1 Channel- 8 V , + 8 V3.6 nCEnhancement  
RQ3E160ADTB


MOSFET Nch 30V 16A Middle Power MOSFET
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ROHM 5498
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AUD 0.4301
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16 A30 V3.5 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtH SMT - 8ReelSi1 Channel+/- 20 V51 nCEnhancement  
BSS138TA


Good-Ark Semiconductor BSS138. Single configuration 50 V N-Channel MOSFET
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Diodes Incorporated 5487
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AUD 0.165
Multiples of: 1

200 mA50 V3.5 OhmsN - Channel 500 mV- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel5 V Enhancement  
SI8818EDB-T2-E1


MOSFETs N-CHANNEL 30-V (D-S) MOSFET
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Vishay 5485
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AUD 0.176
Multiples of: 1

2.2 A30 V128 mOhmsN - Channel 1 V- 55 C+ 150 C900 mWSMD/SMTMICRO - FOOT - 0.8X0.8 - 4Reel , Cut TapeSi1 Channel- 12 V , 12 V4.6 nCEnhancement TrenchFET
PSMQC042N10LS2_R2_00201


MOSFETs 100V 4.2m ohms Excellect low FOM MOSFET for PD3.0 100W solution
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Panjit 5479
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AUD 1.7757
Multiples of: 1

109 A100 V4.2 mOhmsN - Channel 2.3 V- 55 C+ 175 C115 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V58 nCEnhancement  
DMP4015SSS


SOP-8 MOSFETs ROHS
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TECH PUBLIC 5349
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AUD 0.2446
Multiples of: 5

                   
SI4435DDY-T1-GE3


MOSFET 30V 11.4A 5.0W 24mohm @ 10V
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Vishay 4471
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AUD 0.293
Multiples of: 5

11.4 A30 V24 mOhmsP - Channel 1 V- 55 C+ 150 C5 WSmd/SmtSOIC - 8 NarrowReelSi1 Channel- 10 V50 nCEnhancement Trenchfet
SP60P11NK


PDFNWB-8L(5x6) MOSFETs ROHS
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Siliup 1953
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AUD 0.3774
Multiples of: 1

                   
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