MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2SK669K-AC


VERY HIGH-SPEED SWITCH,ANALOG SWITCH APPLICATIONS
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ON Semiconductor 5393
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AUD 0.1718
Multiples of: 1

                   
NDS352AP


SOT-23 MOSFETs ROHS
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TECH PUBLIC 5390
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AUD 0.0833
Multiples of: 5

                   
NX138AKSX


MOSFET NX138AKS/SC-88/REEL 7" Q1/T1 *
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Nexperia 5387
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AUD 0.0673
Multiples of: 1

           Cut TapeSi      
PJA3412-AU_R1_000A1


MOSFET 20V N-Channel Enhancement Mode MOSFET
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Panjit 5386
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AUD 0.0952
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4.1 A20 V56 mOhmsN - Channel 1.2 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 12 V , + 12 V4.6 nCEnhancementAEC - Q101 
2N7002KW


null 300mA 200mW 1.4@4.5V,200mA 1V@250uA SOT-323 MOSFETs ROHS
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Siliup 5383
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AUD 0.0115
Multiples of: 50

                   
SISS176LDN-T1-UE3


MOSFETs N-CHANNEL 70-V (D-S) MOSFET
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Vishay 5345
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AUD 0.5122
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42.3 A70 V10.9 mOhmsN - Channel 1.6 V- 55 C+ 150 C39 WSMD/SMTPOWERPAK - 1212 - 8SReel , Cut TapeSi1 Channel- 12 V , + 12 V12.6 nCEnhancement TrenchFET
SIR514DP-T1-BE3


MOSFETs N-Channel 100 V (D-S) MOSFET 150 C 5.8 m 10V
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Vishay 5278
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AUD 1.256
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84.8 A100 V5.8 mOhmsN - Channel 4 V- 55 C+ 150 C83.3 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V31 nCEnhancement  
SIRS4600DP-T1-RE3


MOSFETs N-Channel 60 V (D-S) MOSFET PowerPAK SO-8, 1.2 mohm a. 10V 1.03 mohm a. 7.5V
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Vishay 4945
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AUD 2.8731
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334 A60 V1.2 mOhmsN - Channel 4 V- 55 C+ 150 C240 WSMD/SMTSO - 8SReel , Cut TapeSi1 Channel- 20 V , + 20 V81 nCEnhancement  
FH3080K


TO-252-3 MOSFETs ROHS
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Xinfeihong 4093
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AUD 0.0788
Multiples of: 5

                   
ZVP3310A


P-Channel 100 V 140mA (Ta) 625mW (Ta) Through Hole TO-92
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Diodes Incorporated 0
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AUD 0.4318
Multiples of: 1

140 mA100 V20 OhmsP - Channel 1.5 V- 55 C+ 150 C625 mWThrough HoleTO - 92BulkSi1 Channel- 10 V Enhancement  
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