MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMG301NU-13


MOSFET 25V N-Ch ENH FET 25Vds 8Vgs 0.32W
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Diodes Incorporated 5907
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AUD 0.1071
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260 mA25 V4 OhmsN - Channel 700 mV- 55 C+ 150 C320 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V360 pCEnhancement  
AGM314MAP


30V 29.7W 1PCSNChannel+1PCSPChannel PDFN3.3x3.3 MOSFETs ROHS
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AGM-Semi 5815
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AUD 0.1099
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SI01P10-TP


P-Channel 100V 1A (Tj) 770mW Surface Mount SOT-23
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Micro Commercial Components (MCC) 5815
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AUD 0.1711
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          TO - 236 - 3 , SC - 59 , SOT - 23 - 3Tape And ReelMosfet (Metal Oxide)      
NX3008PBKS.115


Transistor: P-MOSFET; unipolar; -30V; -200mA; 80mW; SOT363
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Nexperia 5813
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AUD 0.18
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PJC7404_R1_00001


MOSFETs 20V P-Channel Enhancement Mode MOSFETESD Protected
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Panjit 5810
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AUD 0.1515
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ZVNL110GTA


100V 600mA 3O@10V,500mA 1.1W N Channel SOT-223 MOSFETs ROHS
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Diodes Incorporated 5810
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AUD 0.6181
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600 mA100 V3 OhmsN - Channel 750 mV- 55 C+ 150 C2 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel10 V Enhancement  
RQ1E070RPHZGTR


MOSFETs MOSFET 30V PCH -7A
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ROHM 5810
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AUD 0.7034
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7 A30 V17 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.5 WSMD/SMTT SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V26 nCEnhancementAEC - Q101 
PSMQC098N10LS2_R2_00201


MOSFETs 100V 9.8m ohms Excellect low FOM MOSFET for PD3.0 45W solution
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Panjit 5810
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AUD 0.92
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60 A100 V9.8 mOhmsN - Channel 2.3 V- 55 C+ 175 C83 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V25 nCEnhancement  
IAUCN08S7N019TATMA1


MOSFETs 80 V, N-Ch, 1.94 mOhm max, Automotive MOSFET, top-side cooled SSO10T, OptiMOS 7
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Infineon 5810
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AUD 2.6016
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223 A80 V1.94 mOhmsN - Channel 3.2 V- 55 C+ 175 C180 WSMD/SMTPG - LHDSO - 10 - 2Reel , Cut TapeSi1 Channel20 V68 nCEnhancement OptiMOS
IRFL110TRPBF


N-Channel 100 V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
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Vishay 5800
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AUD 0.3364
Multiples of: 5

1.5 A100 V540 mOhmsN - Channel 2 V- 55 C+ 150 C3.1 WSmd/SmtSOT - 223ReelSi1 Channel10 V8.3 nCEnhancement  
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