MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002DW


null 230mA 1.4@4.5V,200mA 150mW 1.5V@250uA SOT-363 MOSFETs ROHS
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Siliup 5276
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AUD 0.0228
Multiples of: 20

                   
SI7110DN-T1-E3


MOSFET 20V 21.1A 0.0053Ohm
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Vishay 5276
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AUD 1.4448
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel      Trenchfet/Powerpak
IPP028N08N3GXKSA1


Transistor: N-MOSFET; unipolar; 80V; 100A; 300W; PG-TO220-3
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Infineon 5272
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AUD 3.3709
Multiples of: 1

            Optimos 3      
SIRA54DP-T1-GE3


MOSFET 40V Vds 20V Vgs PowerPAK SO-8
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Vishay 5269
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AUD 1.1084
Multiples of: 1

         Smd/SmtPOWERPAK - SO - 8Cut TapeSi     Trenchfet, Powerpak
IPD135N08N3GATMA1


MOSFET TRENCH 40<-<100V
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Infineon 5264
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AUD 0.6764
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 80 V N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel    Optimos
RD3P130SPFRATL


MOSFET Pch -100V Vdss -13A TO-252(DPAK); TO-252
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ROHM 5262
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AUD 1.251
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13 A100 V200 mOhmsP - Channel - 2.5 V- 55 C+ 150 C20 WSmd/SmtTO - 252 - 3Cut Tape 1 Channel20 V40 nCEnhancement  
NTD4858N-35G


N-Channel 25 V 11.2A (Ta), 73A (Tc) 1.3W (Ta), 54.5W (Tc) Through Hole I-Pak
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ON Semiconductor 5262
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AUD 0.6306
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73 A25 V6.2 mOhmsn - channel 1.45 V- 55 C+ 175 C54.5 Wthrough holeIPAKTubesi1 channel10 V25.7 nCenhancement  
IPC70N04S54R6ATMA1


MOSFET MOSFET_(20V,40V)
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Infineon 4104
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AUD 0.5155
Multiples of: 1

70 A40 V3.9 mOhmsN - Channel 2.2 V- 55 C+ 175 C50 WSmd/SmtTDSON - 8Cut TapeSi1 Channel20 V24.2 nCEnhancementAec - Q101Optimos
PSMN013-80YS,115


MOSFET N-CH 80V 12.9 mOhm Standard MOSFET
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Nexperia 2358
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AUD 0.7733
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   N - Channel     Smd/SmtSOT - 669 (LFPAK)Reel       
TSM180N03CS RLG


MOSFET 30V, 9A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 2302
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AUD 0.2118
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9 A30 V16 mOhmsN - Channel 1.2 V- 55 C+ 150 C2.5 WSmd/SmtSOP - 8Cut TapeSi1 Channel10 V4.1 nCEnhancement  
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