MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTD360N65S3H


MOSFET SUPERFET3 FAST 360MOHM DPAK
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ON Semiconductor 5325
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AUD 1.8881
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10 A650 V360 mOhmsN - Channel 4 V- 55 C+ 150 C83 WSMD/SMTDPAK - 3 Si1 Channel- 30 V , + 30 V17.5 nCEnhancement  
IPD30N03S4L-09


Infineon Technologies MOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2
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Infineon 5319
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AUD 0.7695
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30 A30 V9 mOhmsN - Channel16 V - 55 C+ 175 C42 WSmd/SmtTO - 252 - 3ReelSi1 Channel16 V EnhancementAec - Q101Optimos
BSC035N04LS G


Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
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Infineon 5318
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AUD 0.573
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21 A40 V3.5 mOhmsN - Channel20 V2 V- 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V64 nCEnhancement Optimos
BSS84


50V 130mA 5.8Ω@5V,1A 225mW 900mV@250uA P Channel SOT-23 MOSFETs ROHS
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Juxing Electronic Technology 5315
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AUD 0.0187
Multiples of: 20

                   
Hot IRFB3206PBF


Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
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Infineon 5314
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AUD 1.4024
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210 A60 V2.4 mOhmsN - Channel    300 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V120 nC   
IRLHM620TRPBF


Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
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Infineon 5309
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AUD 0.4691
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40 A20 V2.5 mOhmsN - Channel 1.1 V- 55 C+ 150 C37 WSmd/SmtPQFN - 8ReelSi1 Channel12 V52 nCEnhancement  
Hot BSC042NE7NS3GATMA1


Transistor: N-MOSFET; unipolar; 75V; 100A; 125W; PG-TDSON-8
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Infineon 5256
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AUD 1.2033
Multiples of: 1

            Optimos 3      
TK3R2A10PL,S4X


MOSFET TO-220SIS PD=54W 1MHz PWR MOSFET TRNS
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Toshiba 5251
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AUD 2.8075
Multiples of: 1

100 A100 V4.3 mOhmsN - Channel 2.5 V- 55 C+ 175 C54 WThrough HoleTO - 220SIS - 3TubeSi1 Channel20 V161 nCEnhancement U - Mosix - H
9435A


30V 5.3A 36mΩ 2.5V P Channel SOP-8 MOSFETs ROHS
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HL 5238
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AUD 0.0427
Multiples of: 10

                   
NCE3050K


MOSFET N Trench 30V 50A (Tc) 3V @ 250uA 11 mΩ @ 25A,10V TO-252-2 (DPAK) RoHS
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NCE Power 3278
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AUD 0.1358
Multiples of: 5

                   
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