MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SPP20N60S5


MOSFET N-Ch 600V 20A TO220-3 CoolMOS S5
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Infineon 5312
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AUD 2.9881
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20 A600 V190 mOhmsN - Channel  - 55 C+ 150 C208 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement Coolmos
ESN4838


30V 33A 21W 7.5m@10V,20A 1.4V@250uA 2 N-Channel PDFN-8L(3x3) MOSFETs ROHS
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ElecSuper 5305
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AUD 0.2226
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BSZ215CHXTMA1


MOSFET SMALL SIGNAL+P-CH
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Infineon 5304
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AUD 0.921
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           Cut Tape       
RF6E045AJTCR


MOSFET Nch 30V 4.5A Si MOSFET
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ROHM 5302
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AUD 0.2972
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4.5 A30 V16.9 mOhmsN - Channel 500 mV- 55 C+ 150 C1 WSmd/SmtSOT - 363 - 6Cut TapeSi1 Channel12 V8.1 nCEnhancement  
IRFR110PBF


N-Channel 100 V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
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Vishay 5244
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AUD 0.5369
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4.3 A100 V540 mOhmsN - Channel 4 V- 55 C+ 150 C25 WSMD/SMTDPAK - 3 (TO - 252 - 3)TubeSi1 Channel- 20 V , 20 V8.3 nCEnhancement  
BM3134E


SOT-23 MOSFETs ROHS
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Bourne 5160
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AUD 0.0179
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HYG011N04LS1C2


40V 165A 1.1mΩ@10V,40A 75W 1.8V@250uA 58pF@25V N Channel 5876pF@25V 41nC@4.5V -55℃~+175℃@(Tj) DFN5x6-8 MOSFETs ROHS
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HuaYi 5034
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AUD 0.5853
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UT6JA2TCR


MOSFET -30V Pch+Pch Si MOSFET
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ROHM 4822
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AUD 0.4613
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4 A30 V55 mOhms , 55 mOhmsP - Channel 2.5 V- 55 C+ 150 C2 WSmd/SmtHuml2020l - 8Cut TapeSi2 Channel20 V6.7 nC , 6.7 nCEnhancement  
TSM2309CX RFG


MOSFET -60V, -3.1A, Single P-Channel Power MOSFET
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Taiwan Semiconductor 877
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AUD 0.1686
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3.1 A60 V160 mOhmsP - Channel 1.2 V + 50 C1.56 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 10 V8.2 nCEnhancement  
SI2328DS-T1-E3


MOSFET 100V Vds 20V Vgs SOT-23
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Vishay 395
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AUD 0.6255
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   N - Channel  - 55 C+ 150 C Smd/SmtTO - 236 - 3Reel       
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