MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SISS178LDN-T1-UE3


MOSFETs N-CHANNEL 70-V (D-S) MOSFET
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Vishay 5771
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AUD 0.5448
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45.3 A70 V9.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C39 WSMD/SMTPOWERPAK - 1212 - 8SReel , Cut TapeSi1 Channel- 20 V , + 20 V18.7 nCEnhancement TrenchFET
SQJ952EP-T1_BE3


MOSFETs DUAL N-CHANNEL 60-V (D-S) 175C MOSFET
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Vishay 5771
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AUD 0.7307
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           Reel , Cut TapeSi      
IRL530NSTRLPBF


Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
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Infineon 5771
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AUD 0.9149
Multiples of: 1

17 A100 V150 mOhmsN - Channel    3.8 WSmd/SmtD2PAKReelSi1 Channel20 V22.7 nC   
WSF50N10G


TO-252-3 MOSFETs ROHS
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Winsok 5769
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AUD 0.8333
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DMN2019UTS-13


Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V 24V TSSOP-8 T&R 2.5K
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Diodes Incorporated 5768
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AUD 0.2252
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5.4 A20 V24 mOhmsN - Channel12 V0.95 V- 55 C+ 150 C780 mWSmd/SmtTSSOP - 8ReelSi2 Channel12 V8.8 nCEnhancement  
TPM2030JX


30V 10A DFN2X2-6L MOSFETs ROHS
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Shenzhen JingYang 5766
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AUD 0.2139
Multiples of: 5

                   
BSP297 H6327


Infineon Technologies MOSFET N-Ch 200V 660mA SOT-223-3
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Infineon 5766
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AUD 0.4767
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660 mA200 V1 OhmsN - Channel 800 mV- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 4ReelSi1 Channel20 V16.1 nCEnhancement  
PSMQC042N10LS2_R2_00201


MOSFETs 100V 4.2m ohms Excellect low FOM MOSFET for PD3.0 100W solution
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Panjit 5765
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AUD 1.9754
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109 A100 V4.2 mOhmsN - Channel 2.3 V- 55 C+ 175 C115 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V58 nCEnhancement  
IPL60R360P6SATMA1


Infineon Technologies MOSFET N-Ch 600V 11.3A ThinPAK 5x6
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Infineon 5763
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AUD 1.0598
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11.3 A600 V360 mOhmsN - Channel 4 V- 40 C+ 150 C89.3 WSmd/SmtTH in PAK 5X6ReelSi1 Channel30 V22 nC  Coolmos
SSM3K36MFV,L3APF(T


MOSFET N Trench 20V 500mA 1V @ 1mA 630 mΩ @ 200mA,5V VESM RoHS
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Toshiba 5761
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AUD 0.0424
Multiples of: 10

                   
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