MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HSBA4113


40V 27A 40mΩ@10V,18A 42W P Channel PRPAK-5x6 MOSFETs ROHS
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HUASHUO 5233
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AUD 0.2006
Multiples of: 5

                   
WM02P30M


SOT-23 MOSFETs ROHS
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Wayon 5218
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AUD 0.027
Multiples of: 20

                   
20N06


TO-252 MOSFETs ROHS
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Youtai 5215
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AUD 0.1412
Multiples of: 5

                   
BUK9Y6R0-60E,115


MOSFET N-channel 60 V 6.0 mo FET
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Nexperia 5215
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AUD 0.9293
Multiples of: 1

100 A60 V4.6 mOhmsN - Channel 1.7 V- 55 C+ 175 C195 WSmd/SmtLFPAK56 - 5ReelSi1 Channel15 V39.4 nCEnhancement  
SSM6K404TU,LF


MOSFET Small Signal MOSFET N-ch VDSS=20V VGSS=+-10V ID=3.0A RDSON=0.055Ohm @ 4V in UF6 package
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Toshiba 5212
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AUD 0.1867
Multiples of: 1

3 A20 V55 mOhmsN - Channel 1 V- 55 C+ 150 C500 mWSmd/SmtUF - 6Cut TapeSi1 Channel10 V5.9 nCEnhancement U - Mosiii
MCH6353-TL-W


MOSFET Pwr MOSFET 12V 6A 35mOhm SGL P-CH
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ON Semiconductor 5194
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AUD 0.22
Multiples of: 1

- 6 A- 12 V35 mOhmsP - Channel     Smd/SmtSOT - 363 - 6Cut TapeSi1 Channel     
DMP3007SPS-13


MOSFET P Trench 30V 90A (Tc) 3V @ 250uA 7 mΩ @ 15A,10V PowerDI5060-8 RoHS
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Diodes Incorporated 5190
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AUD 0.5681
Multiples of: 1

                   
Hot IRF7343TRPBF


MOSFET N & P Trench 55V 4.7A,3.4A 1V @ 250uA 50 mΩ @ 4.7A,10V SOIC-8_150mil RoHS
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Infineon 5186
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AUD 0.3975
Multiples of: 1

4.7 A55 V65 mOhmsN And P - Channel    2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V24 nC   
BUK765R0-100E,118


MOSFET N Channel 100V 120A(Tc) 4V @ 1mA 5mO @ 25A,10V SOT-404 RoHS
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Nexperia 5110
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AUD 2.4955
Multiples of: 1

                   
2N7002-HF


N-Channel 60 V 250mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
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Comchip 0
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AUD 0.064
Multiples of: 1

250 mA60 V N - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel60 V600 pCEnhancement  
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