MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDC5612


Transistor: N-MOSFET; unipolar; 60V; 4.3A; 1.6W; SuperSOT-6
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 5766
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.2779

Multiples of: 5

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TM07N04MI


40V 7A 25m SOT-23-3L MOSFETs ROHS
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Tritech-MOS 5761
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.0617

Multiples of: 10

                   
BSV236SPH6327XT


MOSFET OptiMOS -P Small Signal Transistor
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Infineon 5761
Ships to you
between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.1257

Multiples of: 1

1.5 A20 V131 mOhmsP - Channel 1.2 V- 55 C+ 150 C560 mWSmd/SmtSOT - 363ReelSi1 Channel12 V- 5.7 nCEnhancement  
SSM6J401TU,LF


MOSFET Small Signal MOSFET P-ch VDSS=-30V VGSS=+-20V ID=-2.5A RDSON=0.145Ohm @ 4V in UF6 package
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Toshiba 5761
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.1905

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2.5 A30 V73 mOhmsP - Channel - 2.6 V- 55 C+ 150 C500 mWSmd/SmtUF - 6Cut TapeSi1 Channel20 V16 nCEnhancement U - Mosiii
SSM6P36FE,LM


MOSFET Small Signal MOSFET
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Toshiba 5760
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.0885

Multiples of: 1

330 mA20 V3.6 OhmsP - Channel 300 mV + 150 C150 mWSmd/SmtES6 - 6Cut TapeSi2 Channel8 V1.2 nCEnhancement  
QS8M51HZGTR


MOSFETs MOSFET 100V DUAL NCH+PCH
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ROHM 5760
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.6277

Multiples of: 1

2 A , 1.5 A100 V325 mOhms , 470 mOhmsN - Channel, P - Channel 2.5 V- 55 C+ 150 C1.5 WSMD/SMTT SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V4.7 nC , 17 nCEnhancementAEC - Q101 
QS6J1TR


Mosfet Array 2 P-Channel (Dual) 20V 1.5A 1.25W Surface Mount TSMT6 (SC-95)
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ROHM 5759
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between Thu. 27 Nov to Mon. 01 Dec
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AUD 0.3492

Multiples of: 1

1.5 A20 V310 mOhmsP - Channel    1.25 WSmd/SmtT SMT - 5ReelSi2 Channel12 V Enhancement  
FDMC010N08C


MOSFET PTNG 80/20V IN 51A 10 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 5758
Ships to you
between Thu. 27 Nov to Mon. 01 Dec
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AUD 2.4095

Multiples of: 1

51 A80 V10 mOhmsN - Channel 2 V- 55 C+ 150 C52 WSmd/SmtPOWER - 33 - 8Cut TapeSi1 Channel20 V22 nCEnhancement  
DMP2120U


SOT23 MOSFETs ROHS
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TECH PUBLIC 5756
Ships to you
between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.0762

Multiples of: 5

                   
SI2307CDS


SOT-23 MOSFETs ROHS
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MSKSEMI 5756
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between Fri. 05 Dec to Wed. 10 Dec
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AUD 0.0854

Multiples of: 5

                   
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