MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML6401


MOSFET P Trench 12V 4.3A 950mV @ 250uA 50 mΩ @ 4.3A,4.5V SOT-23 RoHS
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Youtai 12066
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AUD 0.0324
Multiples of: 20

                   
DMC2990UDJ-7


SOT-963-6 MOSFETs ROHS
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Diodes Incorporated 5364
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AUD 0.081
Multiples of: 5

450 mA , 310 mA20 V990 mOhms , 1.9 OhmsN - Channel, P - Channel 400 mV- 55 C+ 150 C350 mWSmd/SmtSOT - 963 - 6Cut TapeSi2 Channel4.5 V0.5 nC , 0.4 nCEnhancement  
ISZ106N12LM6ATMA1


MOSFETs N
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Infineon 5302
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AUD 1.4695
Multiples of: 1

62 A120 V10.6 mOhmsN - Channel 2.2 V- 55 C+ 175 C94 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V10.4 nCEnhancement OptiMOS
SI4948BEY-T1-GE3


MOSFET 60V 3.1A 2.4W 120mohm @ 10V
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Vishay 5297
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AUD 0.6565
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   P - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReelSi     Trenchfet
TSM2309CX RFG


MOSFET -60V, -3.1A, Single P-Channel Power MOSFET
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Taiwan Semiconductor 5288
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AUD 0.1855
Multiples of: 1

3.1 A60 V160 mOhmsP - Channel 1.2 V + 50 C1.56 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 10 V8.2 nCEnhancement  
DMP1009UFDFQ-7


MOSFET MOSFET BVDSS: 8V 24V U-DFN2020-6 T&R 3K
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Diodes Incorporated 5287
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AUD 0.3349
Multiples of: 1

           Cut Tape       
RTR030P02HZGTL


MOSFET PCH -20V -3A SMALL SIGNAL MOSF
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ROHM 5280
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AUD 0.506
Multiples of: 1

3 A20 V75 mOhmsP - Channel - 2 V- 55 C+ 150 C1 WSmd/SmtSC - 96 - 3Cut TapeSi1 Channel12 V9.3 nCEnhancementAec - Q101 
FDN5632N-F085


MOSFET Trans MOS N-Ch 60V 1.7A
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ON Semiconductor 5278
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AUD 0.4166
Multiples of: 1

1.6 A60 V98 mOhmsN - Channel  - 55 C+ 150 C1.1 WSmd/SmtSSOT - 3Cut TapeSi1 Channel20 V Enhancement Ultrafet
PJS6839_S1_00001


MOSFET /SG9/TRR/7"/HF/3K/SOT23-6L/MOS/SOT/NFET-60TLMP/NF60TL-QI04/PJ///
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Panjit 5266
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AUD 0.0985
Multiples of: 1

300 mA60 V4 OhmsP - Channel 2.5 V- 55 C+ 150 C500 mWSMD/SMTSOT - 23 - 6Reel , Cut TapeSi2 Channel- 20 V , + 20 V1.1 nCEnhancement  
PMN48XP,115


MOSFET P-CH -20 V -4.1 A
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Nexperia 4606
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AUD 0.2019
Multiples of: 1

   P - Channel     Smd/SmtSOT - 457Reel       
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