MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SKML2502


SOT-23 MOSFETs ROHS
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Shikues 5354
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AUD 0.0381
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PMV48XPAR


NXP Semiconductors MOSFET 20V P-channel Trench MOSFET
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Nexperia 5353
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AUD 0.5104
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3.5 A20 V55 mOhmsP - Channel 750 mV- 55 C+ 150 C930 mWSmd/SmtTO - 236AB - 3ReelSi1 Channel- 4.5 V8.5 nCEnhancement  
BSZ065N03LSATMA1


Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
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Infineon 5349
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AUD 0.3727
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49 A30 V6.5 mOhmsN - Channel 2 V- 55 C+ 150 C26 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V10 nCEnhancement OptiMOS
IPB80N03S4L03ATMA1


MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
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Infineon 5347
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AUD 1.7306
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80 A30 V2 mOhmsN - Channel 1 V- 55 C+ 175 C136 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel16 V140 nCEnhancementAec - Q101 
BSZ096N10LS5


MOSFET TRENCH >=100V
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Infineon 5346
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AUD 1.8189
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SP3023CNJ


30V 1 N-Channel + 1 P-Channel PDFNWB-8L(3.3x3.3) MOSFETs ROHS
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Siliup 5344
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AUD 0.0598
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FDC5614P


SOT-23-6 MOSFETs ROHS
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MSKSEMI 5344
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AUD 0.1384
Multiples of: 5

                   
DMG4822SSD-13


MOSFET MOSFET BVDSS: 31V-40 1V-40V,SO-8,2.5K
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Diodes Incorporated 5256
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AUD 0.3722
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   N - Channel  - 55 C+ 150 C Smd/SmtSO - 8Reel       
SI1469DH-T1-E3


MOSFET 20V 2.7A 2.78W 80 mohms @ 10V
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Vishay 3565
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AUD 0.3596
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   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 363 - 6ReelSi     Trenchfet
TMG08N10SI


100V 8A 130m SOT-89-3L MOSFETs ROHS
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Tritech-MOS 1716
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AUD 0.0653
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