MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSL308PEH6327XTSA1


Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6
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Infineon 5339
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AUD 0.2807
Multiples of: 1

            Optimos P3      
TM04P02AI


20V 4A 35m SOT-23 MOSFETs ROHS
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Tritech-MOS 5335
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AUD 0.0231
Multiples of: 20

                   
NTNS3164NZT5G


MOSFET NFET SOT883 20V 245MA 1.5
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ON Semiconductor 5335
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AUD 0.1306
Multiples of: 250

361 mA20 V700 mOhmsN - Channel     Smd/SmtXDFN3 - 3ReelSi      
WSD4066ADN


40V 14A 14mΩ@10V,14A 2.5W 2V@250uA 2 N-Channel DFN-8(3.3x3.3) MOSFETs ROHS
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Winsok 5330
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AUD 0.3132
Multiples of: 5

                   
TM40P06D


TO-252-3L MOSFETs ROHS
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Tritech-MOS 5326
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AUD 0.2347
Multiples of: 5

                   
IPD90N04S4-03


Infineon Technologies MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
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Infineon 5326
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AUD 0.7897
Multiples of: 1

90 A40 V3.2 mOhmsN - Channel 2 V- 55 C+ 175 C94 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V66 nCEnhancementAec - Q101Optimos
BSC030N03LSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 98A; 69W; PG-TDSON-8
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Infineon 5319
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AUD 0.3917
Multiples of: 1

            Optimos 3      
IRFR9010PBF


P-Channel 50 V 5.3A (Tc) 25W (Tc) Surface Mount D-Pak
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Vishay 5096
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AUD 0.6419
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtDPAKTubeSi      
IQE220N15NM5SCATMA1


MOSFETs TRENCH >=100V
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Infineon 4801
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AUD 1.7567
Multiples of: 1

           Reel , Cut TapeSi     OptiMOS
RQ3L070BGTB1


MOSFETs NCH 60V 20A, HSMT8G
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ROHM 4412
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AUD 0.5681
Multiples of: 1

20 A60 V24.7 mOhmsN - Channel 2.5 V- 55 C+ 150 C15 WSMD/SMTH SMT - 8GReel , Cut TapeSi1 Channel- 20 V , + 20 V7.6 nCEnhancement  
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