MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ES138KR


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-723 MOSFETs ROHS
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ElecSuper 5422
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AUD 0.0216
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SIR516DP-T1-BE3


MOSFETs N-Channel 100 V (D-S) MOSFET 150 C 8 m 10V
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Vishay 5422
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AUD 1.2163
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63.7 A100 V8 mOhmsN - Channel 4 V- 55 C+ 150 C71.4 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V23.6 nCEnhancement  
SIR5110DP-T1-RE3


MOSFETs N-Channel 100 V (D-S) MOSFET PowerPAK SO-8, 12.5 m a. 10V 12.3 m a. 7.5V
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Vishay 5415
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AUD 1.2901
Multiples of: 1

47.6 A100 V12.5 mOhmsN - Channel 4 V- 55 C+ 150 C59.5 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V12.8 nCEnhancement  
ISC037N13NM6ATMA1


MOSFETs N
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Infineon 5410
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AUD 3.4257
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172 A135 V3.7 mOhmsN - Channel 3.5 V- 55 C+ 175 C250 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V82 nCEnhancement  
UM6J1NTN


ROHM Semiconductor MOSFET TRANS MOSFET PCH 30V 0.2A 6PIN
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ROHM 5407
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AUD 0.1915
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200 mA- 30 V900 mOhmsP - Channel  - 55 C+ 150 C150 mWSmd/SmtUMT - 6ReelSi2 Channel20 V Enhancement  
FCP11N60F


MOSFET 600V NCH MOSFET
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ON Semiconductor 5403
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AUD 2.9388
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11 A600 V380 mOhmsn - channel  - 55 C+ 150 C125 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement superfet frfet
PMV213SN,215


100V 0.29A 350mW 2.7@10V,0.2A 2.5V@250uA 1 N-Channel SOT-23 MOSFETs ROHS
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ElecSuper 5402
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AUD 0.05
Multiples of: 10

                   
SP40P18P8


SOP-8L MOSFETs ROHS
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Siliup 5388
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AUD 0.1115
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NDS355N


SOT-23 MOSFETs ROHS
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TECH PUBLIC 4500
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AUD 0.0756
Multiples of: 10

                   
FDS6681Z


SOP-8 MOSFETs ROHS
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Youtai 0
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AUD 0.1666
Multiples of: 5

                   
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