MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AUIRF1324WL


International Rectifier MOSFET AUTO 24V 1 N-CH HEXFET 1.3mOhms
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Infineon 5820
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AUD 9.882
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382 A24 V1.3 mOhmsN - Channel  - 55 C 300 WThrough HoleI2PAK - 3TubeSi1 Channel20 V120 nCEnhancementAec - Q101 
IPT65R033G7XTMA1


MOSFET HIGH POWER_NEW
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Infineon 5820
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AUD 23.1806
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69 A650 V33 mOhmsN - Channel 3 V- 55 C+ 150 C391 WSmd/SmtHSOF - 8ReelSi1 Channel+/- 30 V110 nCEnhancement Coolmos
FDMA905P


12V 16A 12mΩ@4.5V,6.7A 2.5W 700mV@250uA 590pF@10V P Channel 2.7nF@10V 35nC@4.5V -55℃~+150℃@(Tj) DFN2x2-6L MOSFETs ROHS
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JSMSEMI 5818
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AUD 0.4214
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IAUCN08S7N016TATMA1


MOSFETs 80 V, N-Ch, 1.63 mOhm max, Automotive MOSFET, top-side cooled SSO10T, OptiMOS 7
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Infineon 5818
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AUD 3.1952
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262 A80 V1.63 mOhmsN - Channel 3.2 V- 55 C+ 175 C205 WSMD/SMTPG - LHDSO - 10 - 3Reel , Cut TapeSi1 Channel20 V83 nCEnhancement OptiMOS
TN2540N8-G


Transistor: N-MOSFET; unipolar; 400V; 1A; 1.6W; SOT89
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Microchip 5817
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AUD 1.9556
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260 mA400 V12 OhmsN - Channel 600 mV- 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel10 V Enhancement  
IPD90N10S406ATMA1


MOSFET MOSFET_75V 120V
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Infineon 5817
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AUD 1.9285
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SI1026X


SOT-563 MOSFETs ROHS
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TECH PUBLIC 5816
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AUD 0.0816
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AP2714SD


1PCSN-Channel&1PCSP-Channel SOP-8 MOSFETs ROHS
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Quan Li 5816
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AUD 0.2791
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IQE050N08NM5SCATMA1


MOSFET
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Infineon 5816
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AUD 2.8462
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16 A80 V5 mOhmsN - Channel 3.8 V- 55 C+ 175 C2.5 WSMD/SMTWHSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V44 nCEnhancement  
TDNM3K50DWX


50V 500mV 2 N-Channel SOT-363 MOSFETs ROHS
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Shenzhen JingYang 5815
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AUD 0.0822
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