MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WST3428


SOT-23-3L MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Winsok 5170
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AUD 0.0272
Multiples of: 20

                   
4606A


30V 2.5V 1PCSN-Channel&1PCSP-Channel SOP-8 MOSFETs ROHS
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HL 5170
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AUD 0.0646
Multiples of: 5

                   
IPD068P03L3GATMA1


Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
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Infineon 5168
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AUD 0.596
Multiples of: 1

            Optimos P3      
FDMC8884


MOSFET 30V N-Channel Power Trench
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ON Semiconductor 5166
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AUD 0.5539
Multiples of: 1

9 A30 V19 mOhmsn - channel  - 55 C+ 150 C2.3 Wsmd/smtPOWER 33Reelsi1 channel20 V5 nC , 10 nCenhancement powertrench
R8002KND3TL1


MOSFET High-speed Switching Nch 800V 1.6A Power MOSFET
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ROHM 5162
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AUD 0.9961
Multiples of: 1

1.6 A800 V4.2 OhmsN - Channel 4.5 V- 55 C+ 150 C30 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V7.5 nCEnhancement  
2320A


20V 7.5A 12mΩ 1.2V N Channel SOT23 MOSFETs ROHS
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HL 5160
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AUD 0.0272
Multiples of: 20

                   
DMC4047LSD-13


MOSFET FET BVDSS 31V 40V 1.3W 1180pF 21.3nC
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Diodes Incorporated 5079
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AUD 0.3858
Multiples of: 1

6.9 A , 4.5 A40 V32 mOhms , 55 mOhmsN - Channel, P - Channel 2.2 v , 2.4 V- 55 C+ 150 C1.8 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V19.1 nC , 21.5 nCEnhancement  
Hot IRFU5410PBF


P-Channel 100 V 13A (Tc) 66W (Tc) Through Hole IPAK (TO-251AA)
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Infineon 4672
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AUD 0.8324
Multiples of: 1

13 A100 V205 mOhmsP - Channel    66 WThrough HoleIPAKTubeSi1 Channel20 V38.7 nC   
PMPB12UNEX


MOSFET PMPB12UNE/SOT1220/REEL 7" Q1/T
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Nexperia 4149
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AUD 0.1954
Multiples of: 1

           Cut TapeSi      
SPA06N80C3XKSA1


MOSFET N-Ch 800V 6A TO220FP-3 CoolMOS C3
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Infineon 485
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AUD 1.4748
Multiples of: 1

6 A800 V780 mOhmsN - Channel 2.1 V- 55 C+ 150 C39 WThrough HoleTO - 220FP - 3TubeSi1 Channel20 V41 nCEnhancement Coolmos
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