MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC340N08NS3 G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon 24710
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AUD 0.5007
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23 A80 V27.5 mOhmsN - Channel 2 V- 55 C+ 150 C32 WSmd/SmtTDSONReelSi1 Channel20 V9.1 nCEnhancement Optimos
TPSI3440DV-T1-GE3


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 5567
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AUD 0.2214
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SIR576DP-T1-BE3


MOSFETs N-Channel 150 V (D-S) MOSFET 150 C 16 m 10V
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Vishay 5561
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AUD 0.9334
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42.2 A150 V16 mOhmsN - Channel 4 V- 55 C+ 150 C71.4 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V25.2 nCEnhancement  
AONR66406


Transistor: N-MOSFET; unipolar; 40V; 30A; 10.5W; DFN8; 3x3mm
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Alpha & Omega 5553
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AUD 0.2841
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RSQ035P03HZGTR


MOSFET PCH -30V -3.5A SMALL SIGNAL MO
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ROHM 5552
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AUD 0.4276
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3.5 A30 V65 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 457T - 6Reel , Cut TapeSi1 Channel- 20 V , 20 V9.2 nCEnhancementAEC - Q101 
ISK018NE1LM7ATSA1


MOSFETs TRENCH <= 40V
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Infineon 5550
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AUD 0.6679
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129 A15 V1.8 mOhmsN - Channel 2 V- 55 C+ 150 C39 WSMD/SMTVSON - 6Reel , Cut TapeSi1 Channel- 7 V , + 7 V7.5 nCEnhancement OptiMOS
SSM3J35AMFV,L3F


MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V
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Toshiba 5499
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AUD 0.0649
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250 mA20 V1.1 OhmsP - Channel 1 V + 150 C500 mW (1/2 w)Smd/SmtSOT - 723 - 3Cut TapeSi1 Channel10 V Enhancement  
WPM2031-3/TR


20V 600mA 495mΩ@4.5V,450mA 360mW P Channel SOT-723 MOSFETs ROHS
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Will Semiconductor 5480
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AUD 0.0578
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CSD85301Q2


Texas Instruments MOSFET CSD85301Q2 Dual N- Channel Power MOSFET
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Texas Instruments 3831
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AUD 0.3363
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8 A20 V27 mOhmsn - channel 600 mV- 55 C+ 150 C2.3 Wsmd/smtWSON - 6Reelsi2 channel10 V5.4 nC , 5.4 nCenhancement nexfet
Hot IRFB4127PBF


MOSFET N Trench 200V 76A (Tc) 5V @ 250uA 20 mΩ @ 44A,10V TO-220AB RoHS
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Infineon 885
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AUD 2.3612
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   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
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