MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR9024NTRLPBF


Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
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Infineon 26190
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AUD 0.3377
Multiples of: 3000

11 A55 V175 mOhmsP - Channel 4 V- 55 C+ 150 C38 WSmd/SmtDPAKReelSi1 Channel20 V19 nC   
FDMA410NZ


MOSFET 20V Single N-Ch 1.5V Specified PowerTrnch
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ON Semiconductor 5820
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AUD 0.3603
Multiples of: 3000

9.5 A20 V23 mOhmsN - Channel  - 55 C+ 150 C2.4 WSmd/SmtMICRO - FETReelSi1 Channel8 V Enhancement Powertrench
SIA441DJ-T1-GE3


MOSFET 40V 12A 19W 47mOhms @ 10V
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Vishay 5820
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AUD 0.3655
Multiples of: 3000

12 A40 V47 mOhmsP - Channel 1.2 V- 55 C+ 150 C19 WSmd/SmtSC - 70ReelSi1 Channel- 10 V22 nCEnhancement Trenchfet, Powerpak
DMN2016LFG-7


Diodes Incorporated MOSFET MOSFET N-CHANNEL DFN DFN3030-8 GREEN 3K
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Diodes Incorporated 5820
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AUD 0.3719
Multiples of: 1

5.2 A20 V30 mOhmsN - Channel8 V1.1 V- 55 C+ 150 C0.77 WSmd/SmtUDFN - 3030 - 8Reel   16 nCEnhancement  
SI3443BDV-T1-BE3


MOSFET 2.5V P-CHANNEL (G-S)
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Vishay 5820
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AUD 0.3751
Multiples of: 1

3.6 A20 V60 mOhmsP - Channel 1.4 V- 55 C+ 150 C1.1 WSMD/SMTTSOP - 6Reel , Cut TapeSi1 Channel- 12 V , + 12 V6 nCEnhancement  
SI2328DS-T1-GE3


MOSFET 100V Vds 20V Vgs SOT-23
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Vishay 5820
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AUD 0.381
Multiples of: 3000

1.15 A100 V250 mOhmsN - Channel 2 V- 55 C+ 150 C0.73 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V3.3 nCEnhancement Trenchfet
PJD25N03_L2_00001


MOSFETs 30V N-Channel Enhancement Mode MOSFET
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Panjit 5820
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AUD 0.381
Multiples of: 1

                   
STL6N2VH5


STMicroelectronics MOSFET N-Ch 20 V 0.025 Ohm 6 A STripFET V
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STMicroelectronics 5820
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AUD 0.327
Multiples of: 3000

6 A20 V31 mOhmsN - Channel8 V0.7 V- 55 C+ 150 C2.4 WSmd/SmtPowerflat - 6Reel   6 nCEnhancement Stripfet
STL6N3LLH6


STMicroelectronics MOSFET N-Ch 30 V 0.021 Ohm 6 A STripFET VI DG
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STMicroelectronics 5820
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AUD 0.3405
Multiples of: 3000

6 A30 V40 mOhmsn - channel 1 V- 55 C+ 150 C2.4 Wsmd/smtPowerflat - 6Reelsi1 channel20 V3.6 nC  stripfet
SI1022R-T1-GE3


MOSFET 60V Vds 20V Vgs SC75A
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Vishay 5820
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AUD 0.3462
Multiples of: 3000

330 mA60 V2.25 OhmsN - Channel 1 V- 55 C+ 150 C250 mWSmd/SmtSOT - 416 - 3Cut TapeSi1 Channel10 V0.6 nCEnhancement Trenchfet
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