MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002


SOT-23 MOSFETs ROHS
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MSKSEMI 19448
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AUD 0.0143
Multiples of: 50

                   
AP3010


MOSFET N Trench 30V 10A 3V @ 250uA 12 mΩ @ 10A,10V SOP-8 RoHS
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Quan Li 5577
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AUD 0.1547
Multiples of: 5

                   
CSD87334Q3DT


MOSFET Sync Buck NexFET Power Block
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Texas Instruments 5577
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AUD 1.2851
Multiples of: 250

20 A , 20 A30 v , 30 V8.3 mOhms , 8.3 mOhmsN - Channel 750 mV , 750 mV- 55 C+ 150 C6 WSmd/SmtSON - 8ReelSi2 Channel8 v , 8 V750 mv 6.4 nC , 6.4 nCEnhancement Nexfet
IQE050N08NM5CGSCATMA1


MOSFET
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Infineon 5577
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AUD 2.5008
Multiples of: 1

16 A80 V5 mOhmsN - Channel 3.8 V- 55 C+ 175 C2.5 WSMD/SMTWHTFN - 9Reel , Cut TapeSi1 Channel- 20 V , + 20 V44 nCEnhancement  
WST6402


SOT-23N MOSFETs ROHS
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Winsok 5572
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AUD 0.0536
Multiples of: 10

                   
BSS159NH6327XTSA2


Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
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Infineon 5564
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AUD 0.1412
Multiples of: 1

            Sipmos      
IRF6613TRPBF


Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET
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Infineon 5559
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AUD 1.5482
Multiples of: 1

23 A40 V4.1 mOhmsN - Channel20 V   89 W DirectfetReel   42 nC  Directfet
SI2301


SOT-23 MOSFETs ROHS
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Shenzhen JingYang 5556
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AUD 0.0449
Multiples of: 10

                   
RU1E002SPTCL


Trans MOSFET P-CH Si 30V 0.25A 3-Pin UMTF T/R
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ROHM 5555
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AUD 0.0637
Multiples of: 1

250 mA30 V900 mOhmsP - Channel 2.5 V- 55 C+ 150 C200 mWSmd/SmtSOT - 323FL - 3Cut TapeSi1 Channel20 V Enhancement  
SI7172ADP-T1-RE3


MOSFET 200V Vds 20V Vgs PowerPAK SO-8
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Vishay 4961
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AUD 0.83
Multiples of: 1

25 A200 V70 mOhmsN - Channel 2 V- 55 C+ 150 C96 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V77 nCEnhancement  
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