MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVMFWS1D1N04XMT1G


MOSFETs 40V T10M IN S08FL PACKAGE
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ON Semiconductor 5549
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AUD 1.3169
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233 A40 V1.05 mOhmsN - Channel 3.5 V- 55 C+ 175 C104 WSMD/SMTDFNW - 5Reel , Cut TapeSi1 Channel20 V49.3 nCEnhancement  
BSP125 H6327


Infineon Technologies MOSFET N-Ch 600V 120mA SOT-223-3
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Infineon 5546
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AUD 0.3579
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120 mA600 V45 OhmsN - Channel 1.9 V- 55 C+ 150 C1.8 WSmd/SmtPG - SOT223Reel-1 Channel+/- 20 V4.4 nCEnhancement  
DMN6022SSD-13


Power Management Specialized - PMIC MOSFET BVDSS: 41V-60V
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Diodes Incorporated 5543
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AUD 0.4878
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6 A60 V29 mOhmsN - Channel 3 V- 55 C+ 150 C1.2 WSMD/SMT Reel , Cut TapeSi2 Channel- 20 V , 20 V14 nCEnhancement  
IAUCN04S7L009ATMA1


MOSFETs MOSFET_(20V 40V)
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Infineon 5537
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AUD 1.0639
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275 A40 V910 uOhmsN - Channel 1.5 V- 55 C+ 175 C129 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 16 V , + 16 V66 nCEnhancement  
QS8M51HZGTR


MOSFETs MOSFET 100V DUAL NCH+PCH
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ROHM 5535
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AUD 0.5657
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2 A , 1.5 A100 V325 mOhms , 470 mOhmsN - Channel, P - Channel 2.5 V- 55 C+ 150 C1.5 WSMD/SMTT SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V4.7 nC , 17 nCEnhancementAEC - Q101 
IRFR9024TRPBF


MOSFET P-Chan 60V 8.8 Amp
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Vishay 5534
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AUD 0.6361
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8.8 A60 V280 mOhmsP - Channel 2 V- 55 C+ 150 C42 WSmd/SmtDPAKReelSi1 Channel- 10 V19 nCEnhancement  
SP2102T3


SOT-323 MOSFETs ROHS
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Siliup 5335
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AUD 0.0166
Multiples of: 20

                   
IRFR5505TRPBF


MOSFET P Trench 55V 18A 4V @ 250uA 110 mΩ @ 9.6A,10V TO-252-2 (DPAK) RoHS
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Infineon 5196
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AUD 0.3776
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18 A55 V110 mOhmsP - Channel 4 V- 55 C+ 150 C57 WSmd/SmtDPAKReelSi1 Channel20 V32 nCEnhancement  
WST2011


MOSFET 2 P Channel (Dual) 20V 3.2A 1.5V @ 250uA 85 mΩ @ 2A,4.5V SOT-23-6 RoHS
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Winsok 4932
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AUD 0.2273
Multiples of: 5

                   
AP20P30Q


30V 20A 10.5mΩ@10V,10A 40W P Channel DFN-8(3x3.3) MOSFETs ROHS
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Quan Li 4365
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AUD 0.242
Multiples of: 5

                   
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