MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIS4604DN-T1-GE3


MOSFETs N-CHANNEL 60 V MOSFET PWRPAK
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Vishay 5720
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AUD 0.6039
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14.6 A60 V12.4 mOhms  4 V- 55 C+ 150 C3.6 W  Reel , Cut TapeSi - 20 V , + 20 V11.2 nC   
AOD4132


Transistor: N-MOSFET; unipolar; 30V; 63A; 100W; TO252
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Alpha & Omega 5718
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AUD 0.7054
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AON2403


P-Channel 12 V 8A (Ta) 2.8W (Ta) Surface Mount 6-DFN (2x2)
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Alpha & Omega 5718
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AUD 0.238
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NX7002AKS,115


NXP Semiconductors MOSFET 60 V, single N-chan Trench MOSFET
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Nexperia 5713
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AUD 0.0533
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170 mA60 V3 OhmsN - Channel 1.6 V- 55 C+ 150 C1.06 WSmd/SmtTSSOP - 6ReelSi2 Channel 0.33 nCEnhancement  
AONR62818


Transistor: N-MOSFET; unipolar; 80V; 41A; 21.5W; DFN3.3x3.3
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Alpha & Omega 5713
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AUD 0.6667
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IPB80N06S2H5ATMA2


MOSFET N-CHANNEL_55/60V
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Infineon 5713
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AUD 2.6871
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   N - Channel     Smd/SmtTO - 263 - 3Cut TapeSi1 Channel   Aec - Q101 
IRFZ34PBF-BE3


N-Channel 60V 30A (Tc) 88W (Tc) Through Hole TO-220AB
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Vishay 5710
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AUD 1.4935
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30 A60 V50 mOhmsN - Channel 4 V- 55 C+ 175 C88 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V46 nCEnhancement  
NTPF190N65S3HF


MOSFET SUPERFET3 650V FRFET 190M
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ON Semiconductor 5710
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AUD 3.9231
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2 A650 V190 mOhmsN - Channel 3 V- 55 C+ 150 C36 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V34 nCEnhancement Superfet Iii
FDC6312P


SOT-23-6L MOSFETs ROHS
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TECH PUBLIC 5693
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AUD 0.1126
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YJQD30P02A


20V 30A 11mΩ@4.5V,15A 32W 2 P-Channel DFN-8(3.3x3.3) MOSFETs ROHS
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Yangjie 0
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AUD 0.2125
Multiples of: 5

                   
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