MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3401S


30V 4.2A 1.2W 45m@10V,4.2A 9V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
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Minos 5742
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AUD 0.0195
Multiples of: 20

                   
SP2101BT3


SOT-323 MOSFETs ROHS
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Siliup 5723
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AUD 0.0294
Multiples of: 20

                   
SSM3K56CT,L3F


MOSFET Small Low ON Resistane MOSFETs
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Toshiba 5723
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AUD 0.0834
Multiples of: 5

800 mA20 V186 mOhmsN - Channel 400 mV + 150 C500 mW (1/2 w)Smd/SmtCST - 3ReelSi1 Channel8 V1 nCEnhancement  
RAQ045P01TCR


ROHM Semiconductor MOSFET
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ROHM 5723
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AUD 0.2561
Multiples of: 1

4.5 A12 V100 mOhmsP - Channel 300 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 457T - 6ReelSi1 Channel- 8 V40 nCEnhancement  
SI5448DU-T1-GE3


MOSFET 40V Vds 20V Vgs PowerPAK ChipFET
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Vishay 5723
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AUD 0.378
Multiples of: 1

25 A40 V6.46 mOhmsN - Channel 1 V- 55 C+ 150 C31 WSmd/SmtPOWERPAK - CHIP - FET - 8Cut TapeSi1 Channel20 v , - 16 V40 nCEnhancement Trenchfet
IRLU110PBF


MOSFET N-Chan 100V 4.3 Amp
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Vishay 5723
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AUD 0.9194
Multiples of: 1

   N - Channel  - 55 C+ 150 C Through HoleIPAKTubeSi      
HL2307


30V 2.6A 90m@10V,2.6A 1W 2.2V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
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hongjiacheng 5719
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AUD 0.0298
Multiples of: 20

                   
RH6R025BHTB1


MOSFETs RH6R025BH is a power MOSFET with low-on resistance and High power package, suitable for switching.
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ROHM 5693
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AUD 1.4316
Multiples of: 1

25 A150 V73 mOhmsN - Channel 4 V- 55 C+ 150 C59 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V16.7 nCEnhancement  
SI8818EDB-T2-E1


MOSFETs N-CHANNEL 30-V (D-S) MOSFET
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Vishay 5509
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AUD 0.1691
Multiples of: 1

2.2 A30 V128 mOhmsN - Channel 1 V- 55 C+ 150 C900 mWSMD/SMTMICRO - FOOT - 0.8X0.8 - 4Reel , Cut TapeSi1 Channel- 12 V , + 12 V4.6 nCEnhancement TrenchFET
NVMFS5C604NWFT1G


MOSFETs NFET SO8FL 60V 287A 12MO
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ON Semiconductor 28
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AUD 7.1418
Multiples of: 1

288 A60 V1.2 mOhmsN - Channel 4 V- 55 C+ 175 C200 WSMD/SMTDFNW - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V80 nCEnhancement  
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