MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC054N04NSG


MOSFET N Channel 40V 17A 4V @ 27uA 5.4mO @ 50A,10V PG-TDSON-8 RoHS
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Infineon 8194
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AUD 0.5959
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IPD50N08S413ATMA1


MOSFET N-CHANNEL 7580V
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Infineon 8189
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AUD 0.779
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50 A80 V11.2 mOhmsN - Channel 2 V- 55 C+ 175 C72 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V30 nCEnhancementAec - Q101 
KY4407


30V 12A 10mΩ@10V,12A 3.1W P Channel SOP-8 MOSFETs ROHS
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Kang Yang 8188
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AUD 0.1356
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IRFI634GPBF


MOSFET N-Chan 250V 5.6 Amp
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Vishay 8188
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AUD 1.9714
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   N - Channel  - 55 C+ 150 C Through HoleTO - 220 - 3 FPTubeSi      
IRF7946TRPBF


International Rectifier MOSFET 40V 198A 1.5mOhm 141nC StrongIRFET
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Infineon 8180
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AUD 1.6395
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198 A40 V1.1 mOhmsN Channel     Smd/SmtDirectfet - MXCut TapeSi  141 nC  Strongirfet
IRF7342TR(UMW)


SOP-8 MOSFETs ROHS
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Youtai 8178
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AUD 0.2655
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IPB025N08N3 G


Infineon Technologies MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3
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Infineon 8172
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AUD 4.5635
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120 A80 V2.5 mOhmsN - Channel20 V - 55 C+ 175 C300 WSmd/SmtD2PAK - 2ReelSi1 Channel20 V Enhancement Optimos
NX2301P.215


Transistor: P-MOSFET; unipolar; -20V; -2A; 400mW; SOT23
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Nexperia 8165
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AUD 0.1467
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IRFR9120TRLPBF-BE3


MOSFET 100V P-CH MOSFET (D-S)
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Vishay 8160
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AUD 0.9394
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5.6 A100 V600 mOhmsP - Channel 4 V- 55 C+ 150 C42 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V18 nCEnhancement  
DMPH6050SSDQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 8055
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AUD 0.6181
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         Smd/SmtSO - 8Cut TapeSi    Aec - Q101 
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