MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIHG20N50C-E3


MOSFET 500V Vds 30V Vgs TO-247AC
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Vishay 10020
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AUD 1.8243
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20 A500 V270 mOhmsN - Channel 3 V- 55 C+ 150 C250 mW (1/4 w)Through HoleTO - 247AC - 3TubeSi1 Channel10 V65 nCEnhancement  
NCE3400AY


30V 5.8A 27mO@10V,5.8A 1.4W N Channel SOT-23-3L MOSFETs ROHS
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NCE Power 7532
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AUD 0.0887
Multiples of: 5

                   
FDC8601


MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor 7531
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AUD 1.078
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2.7 A100 V109 mOhmsn - channel  - 55 C+ 150 C1.6 Wsmd/smtSUPERSOT - 6Reelsi1 channel 3 nC  powertrench
SIHP21N60EF-BE3


MOSFET N-CHANNEL 600V
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Vishay 7525
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AUD 2.3913
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21 A600 V176 mOhmsN - Channel 4 V- 55 C+ 150 C227 WThrough HoleTO - 220AB - 3BulkSi1 Channel- 30 V , + 30 V84 nCEnhancement  
CEDM8004VL


Central Semiconductor MOSFET P-Ch Enh Mode FET 30V 8.0VGS 450mA
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Central Semiconductor 7524
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AUD 0.141
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450 mA30 V1.1 OhmsP - Channel8 V1 V- 65 C+ 150 C100 mWSmd/SmtSOT - 883VL - 3ReelSi1 Channel8 V0.88 nCEnhancement  
IQD009N06NM5SCATMA1


MOSFETs TRENCH 40<-<100V
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Infineon 7520
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AUD 3.7871
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445 A60 V900 uOhmsN - Channel 3.3 V- 55 C+ 175 C333 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V120 nCEnhancement OptiMOS
NTP082N65S3HF


N-Channel 650V 40A (Tc) 313W (Tc) Through Hole TO-220-3
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ON Semiconductor 7515
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AUD 7.2731
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40 A650 V82 mOhmsN - Channel 5 V- 55 C+ 150 C313 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , 30 V81 nCEnhancement  
SIR876ADP-T1-GE3


MOSFET 100V 10.8mOhm@10V 40A N-Ch MV T-FET
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Vishay 7453
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AUD 0.9587
Multiples of: 1

40 A100 V9 mOhmsn - channel 1.5 V- 55 C+ 150 C62.5 Wsmd/smtPOWERPAK SO - 8Reelsi1 channel20 V49 nCenhancement trenchfet, powerpak
TPNCE4009S


40V 15A 1.5W 13m@10V,8A 1.6V@8A SOP-8 MOSFETs ROHS
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TECH PUBLIC 6639
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AUD 0.0795
Multiples of: 5

                   
AO2301


SOT23-3L MOSFETs ROHS
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TECH PUBLIC 5461
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AUD 0.0572
Multiples of: 10

                   
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