MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDV303N


SOT-23 MOSFETs ROHS
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MSKSEMI 8361
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AUD 0.0369
Multiples of: 20

                   
FDS8958A


SOIC-8 MOSFETs ROHS
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TECH PUBLIC 8361
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AUD 0.1731
Multiples of: 5

                   
IRF6645TRPBF


International Rectifier MOSFET 100V 1 N-CH HEXFET DIRECTFET SJ
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Infineon 8360
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AUD 0.859
Multiples of: 1

5.7 A100 V28 mOhmsN - Channel  - 40 C+ 150 C42 WSmd/SmtDirectfet - 3ReelSi1 Channel20 V14 nCEnhancement Directfet
BSZ035N03MS G


MOSFET 30.0V 3.5mOhm N CHANNEL MOSFET
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Infineon 8358
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AUD 0.8105
Multiples of: 1

18 A30 V3.5 mOhmsN - Channel 2 V- 55 C+ 150 C2.1 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V16 nCEnhancement Optimos
PJC7476_R1_00001


MOSFET 100V P-Channel Enhancement Mode MOSFET-ESD Protected
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Panjit 8355
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AUD 0.0908
Multiples of: 1

300 mA100 V9 OhmsN - Channel 2.5 V- 55 C+ 150 C350 mWSMD/SMTSOT - 323 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V1.8 nCEnhancement  
SI7852DP-T1-E3


MOSFET 80V Vds 20V Vgs PowerPAK SO-8
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Vishay 8354
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AUD 2.4095
Multiples of: 1

12.5 A80 V16.5 mOhmsN - Channel 2 V- 55 C+ 150 C5.2 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel10 V34 nCEnhancement Trenchfet
LN2502LT1G


20V 6A 900mV@250uA null SOT-23E MOSFETs ROHS
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Leshan 8351
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AUD 0.0358
Multiples of: 10

                   
IRFR420PBF


N-Channel 500 V 2.4A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay 8351
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AUD 0.7019
Multiples of: 1

2.4 A500 V3 OhmsN - Channel 2 V- 55 C+ 150 C42 WSmd/SmtTO - 252 - 3TubeSi1 Channel10 V19 nCEnhancement  
ESN7534


30V 45A 4m@10V,20A 30W 1.75V@250uA 1PCSNChannel PDFN-8L(3x3) MOSFETs ROHS
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ElecSuper 8344
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AUD 0.1394
Multiples of: 1

                   
FDN340P


SOT-23 MOSFETs ROHS
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Youtai 8342
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AUD 0.0469
Multiples of: 10

                   
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