MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCV8402ASTT3G


ON Semiconductor MOSFET 42V 2.0A
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ON Semiconductor 7760
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AUD 0.5828
Multiples of: 1000

2 A55 V165 mOhmsN - Channel    1.1 WSmd/SmtSOT - 223 - 3ReelSi2 Channel   Aec - Q101 
Hot IRF7832TRPBF


MOSFET N Trench 30V 20A 2.32V @ 250uA 4 mΩ @ 20A,10V SOIC-8_150mil RoHS
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Infineon 7760
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AUD 0.594
Multiples of: 4000

20 A30 V3.7 mOhmsN - Channel 2.32 V- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V34 nC   
FDT86246L


MOSFET 150V 2A N-Channel Power Trench MOSFET
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ON Semiconductor 7760
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AUD 0.6075
Multiples of: 1000

2 A150 V375 mOhmsN - Channel 800 mV- 55 C+ 150 C2.2 WSmd/SmtSOT - 223 - 3ReelSi1 Channel+/- 20 V6.3 nCEnhancement Powertrench
IRFRC20TRPBF


N-Channel 600 V 2A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay 7760
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AUD 0.63
Multiples of: 2000

         Smd/SmtTO - 252 - 3Cut TapeSi      
IRF8788TRPBF


MOSFET N Trench 30V 24A 2.35V @ 100uA 2.8 mΩ @ 24A,10V SOIC-8_150mil RoHS
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Infineon 7760
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AUD 0.6306
Multiples of: 4000

24 A30 V3.04 mOhmsN - Channel 1.8 V- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V44 nC   
SUD23N06-31-GE3


MOSFET N-Ch MOSFET 60V 31 mohm @ 10V
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Vishay 7760
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AUD 0.6558
Multiples of: 2000

21.4 A60 V31 mOhmsN - Channel 1 V- 55 C+ 150 C31.25 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V11 nCEnhancement Trenchfet
SUD08P06-155L-GE3


MOSFET -30V 0.155ohm@-10V -8.4A P-CH
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Vishay 7760
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AUD 0.6729
Multiples of: 2000

- 8.4 A- 60 V155 mOhmsP - Channel20 V- 2 V- 55 C+ 150 C20.8 WSmd/SmtDPAK - 2ReelSi  12.5 nC  Trenchfet
IRLR8743TRPBF


MOSFET N Trench 30V 160A 2.35V @ 100uA 3.1 mΩ @ 25A,10V TO-252-2 (DPAK) RoHS
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Infineon 7760
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AUD 0.8078
Multiples of: 2000

160 A30 V3.9 mOhmsN - Channel    135 WSmd/SmtDPAKReelSi1 Channel20 V39 nC   
FQPF20N06


Transistor: N-MOSFET; unipolar; 60V; 15A; 30W; TO220FP
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ON Semiconductor 7760
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AUD 1.0776
Multiples of: 1

            qfet®      
IRFH5250DTRPBF


International Rectifier MOSFET 25V 1 N-CH HEXFET 1.4mOhms 39nC
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Infineon 7760
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AUD 1.405
Multiples of: 1

40 A25 V1.4 mOhmsN - Channel20 V   3.6 WSmd/SmtPQFN - 8ReelSi1 Channel20 V39 nC   
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