MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZXMP3A17E6TA


P-Channel 30 V 3.2A (Ta) 1.1W (Ta) Surface Mount SOT-23-6
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Diodes Incorporated 8341
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AUD 0.5029
Multiples of: 1

4 A30 V70 mOhmsP - channel 1 V- 55 C+ 150 C1.7 WSmd/smtSOT - 23ReelSi1 Channel- 10 V15.8 nCEnhancement  
FDD8780


MOSFET 25V N-Channel PwrTrench MOSFET
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ON Semiconductor 8338
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AUD 0.6563
Multiples of: 1

   n - channel  - 55 C+ 175 C smd/smtTO - 252Reel       
FDS6912A-TP


SOP-8 MOSFETs ROHS
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TECH PUBLIC 8332
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AUD 0.2376
Multiples of: 5

                   
FDMS0308AS


Fairchild Semiconductor MOSFET
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ON Semiconductor 8332
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AUD 0.6251
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24 A30 V2.2 mOhmsN - Channel 1.7 V- 55 C+ 150 C2.5 WSmd/SmtPOWER56 - 8ReelSi +/- 20 V34 nCEnhancement Powertrench Syncfet
IRLML2402


SOT-23 MOSFETs ROHS
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Youtai 8328
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AUD 0.0546
Multiples of: 10

                   
BSZ086P03NS3 G


MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3
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Infineon 8323
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AUD 0.5878
Multiples of: 1

40 A30 V6.5 mOhmsN - Channel 3.1 V- 55 C+ 150 C69 WSmd/SmtTSDSON - 8ReelSi1 Channel25 V57.5 nCEnhancement Optimos
CSD16327Q3


N-Channel 25 V 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)
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Texas Instruments 8321
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AUD 0.8311
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   N - Channel  - 55 C+ 150 C Smd/SmtSONReel      Nexfet
FSS2300M 2300


20V 4.5A 32mΩ@4.5V,5A 1200mW 1.2V@250uA N Channel 650pF@10V +150℃@(Tj) SOT-23 MOSFETs ROHS
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FOSAN 8320
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AUD 0.0247
Multiples of: 20

                   
MMBF170Q-7-F


MOSFET N-Ch Enh Mode FET 60Vdss 60Vdgr
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Diodes Incorporated 8253
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AUD 0.0821
Multiples of: 1

500 mA70 V5.3 OhmsN - Channel 800 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V EnhancementAec - Q101 
Hot IRFR7440TRPBF


MOSFET N Trench 40V 90A 3.9V @ 100uA 2.4 mΩ @ 90A,10V TO-252-2 (DPAK) RoHS
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Infineon 8026
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AUD 0.3759
Multiples of: 5

90 A40 V2.4 mOhmsN - Channel 2.2 v to 3.9 V- 55 C+ 175 C140 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V89 nCEnhancement Strongirfet
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