MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot FDMS8680


N-Channel 30 V 14A (Ta), 35A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount 8-PQFN (5x6)
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ON Semiconductor 7334
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AUD 0.4571
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14 A30 V8.5 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtPOWER 56ReelSi1 Channel20 V Enhancement Powertrench
IPB048N15N5LFATMA1


MOSFET TRENCH >=100V
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Infineon 7333
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AUD 4.6634
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120 A150 V3.9 mOhmsN - Channel 3.3 V- 55 C+ 150 C313 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V84 nCEnhancement Optimos
BSP613P H6327


Infineon Technologies MOSFET P-Ch -60V -2.9A SOT-223-3
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Infineon 7326
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AUD 0.4785
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2.9 A60 V130 mOhmsP - Channel 2.1 V- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 4Reel-1 Channel- 10 V22 nCEnhancement  
IPD60R180P7SAUMA1


null 18A 72W 180mO@5.6A,10V null TO-252-3 MOSFETs ROHS
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Infineon 7320
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AUD 0.8304
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18 A600 V145 mOhmsN - Channel 3 V- 40 C+ 150 C72 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V25 nCEnhancement Coolmos
BSS306N H6327


Infineon Technologies MOSFET N-Ch 30V 2.3A SOT-23-3
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Infineon 7308
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AUD 0.1174
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2.3 A30 V44 mOhmsN - Channel 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3-Si1 Channel20 V1.5 nCEnhancementAec - Q101 
CEDM8001VL TR


MOSFET 20V P-Ch Enh FET 10Vgs 100mA 100mW
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Central Semiconductor 7305
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AUD 0.1461
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         Smd/SmtSOT - 883VLCut TapeSi      
DMN62D1LFB


60V 300mA 350mW 2.2@10V,0.3A 2.5V@0.2A DFN-3L(1x0.6) MOSFETs ROHS
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TECH PUBLIC 6363
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AUD 0.0299
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DMC2038LVT


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 6188
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AUD 0.1009
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STP13NK60Z


N-Channel 600 V 13A (Tc) 150W (Tc) Through Hole TO-220
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STMicroelectronics 5194
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AUD 1.4345
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13 A600 V550 mOhmsN - Channel  - 55 C+ 150 C150 WThrough HoleTO - 220 - 3 Si1 Channel30 V66 nCEnhancement Supermesh
STP5NK80ZFP


Transistor: N-MOSFET; unipolar; 800V; 2.7A; 30W; TO220FP
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STMicroelectronics 409
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AUD 1.5463
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