MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTLJF4156NT1G


MOSFET NFET 2X2 30V 4A 70MOHM
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ON Semiconductor 8151
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AUD 0.3352
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3.7 A30 V70 mOhmsN - Channel  - 55 C+ 150 C1.5 WSmd/SmtDFN - 6 , 2 x 2ReelSi1 Channel8 V Enhancement  
BSS123W


MOSFET 100V NCH ENHANCEMENT MODE TRANSISTOR
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ON Semiconductor 8148
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AUD 0.1228
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170 mA100 V10 OhmsN - Channel 800 mV- 55 C+ 150 C200 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel20 V Enhancement  
SI8824EDB-T2-E1


Vishay Semiconductors MOSFET N-Channel 20V Microfoot
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Vishay 8148
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AUD 0.1519
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2.9 A20 V75 mOhmsN - Channel - 2 mV / c- 55 C+ 150 C0.9 WSmd/SmtMICRO - FOOT - 4ReelSi1 Channel4.5 V2.7 nCEnhancement Trenchfet
FDC642P


MOSFET SSOT-6 P-CH -20V
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ON Semiconductor 8148
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AUD 0.1764
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4 A20 V65 mOhmsP - Channel  - 55 C+ 150 C1.6 WSmd/SmtSSOT - 6ReelSi1 Channel8 V Enhancement Powertrench
2SK3492-TL-E


GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
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ON Semiconductor 8148
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AUD 0.9143
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CJ3401A


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 60 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 8143
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AUD 0.0584
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AP4438


MOSFET N Channel 30V 11.8A 3V @ 250uA 11.5mO @ 11A,10V SOT-89 RoHS
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Quan Li 8135
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AUD 0.1799
Multiples of: 5

                   
DMP21D5UFB4-7B


Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K
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Diodes Incorporated 8089
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AUD 0.0448
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Hot IRF3205STRLPBF


MOSFET N Trench 55V 110A 4V @ 250uA 8 mΩ @ 62A,10V TO-263-2 RoHS
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Infineon 8069
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AUD 0.6504
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            Hexfet®      
Hot IRF9540NSTRLPBF


Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
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Infineon 6901
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AUD 0.5342
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23 A100 V117 mOhmsP - Channel    3.8 WSmd/SmtD2PAKReelSi1 Channel20 V64.7 nC   
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