MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC009NE2LS5IATMA1


Infineon Technologies MOSFET LV POWER MOS
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Infineon 8485
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AUD 1.2954
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100 A25 V1.25 mOhmsN - Channel 1.2 V- 55 C+ 150 C74 WSmd/SmtSUPERSO - 8ReelSi1 Channel+/- 16 V20 nCEnhancement Optimos
BS170FTA


Trans MOSFET N-CH 60V 0.00015A Automotive 3-Pin SOT-23 T/R
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Diodes Incorporated 7643
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AUD 0.2551
Multiples of: 5

0.15 mA60 V5 OhmsN - Channel 800 mV- 55 C+ 150 C330 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
2N7002


60V 115mA 7.5Ω@10V,500mA 225mW N Channel SOT-23 MOSFETs ROHS
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FOSAN 7566
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AUD 0.0103
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SIHP21N60EF-BE3


MOSFET N-CHANNEL 600V
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Vishay 7525
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AUD 2.3913
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21 A600 V176 mOhmsN - Channel 4 V- 55 C+ 150 C227 WThrough HoleTO - 220AB - 3BulkSi1 Channel- 30 V , + 30 V84 nCEnhancement  
IPB065N10N3GATMA1


Infineon Technologies MOSFET
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Infineon 7517
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AUD 2.4254
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80 A100 V5.9 mOhmsn - channel 2 V- 55 C+ 175 C150 Wsmd/smtTO - 263 - 3Reelsi1 channel20 V64 nCenhancement optimos
FDD5N60NZTM


N-Channel 600 V 4A (Tc) 83W (Tc) Surface Mount TO-252AA
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ON Semiconductor 7512
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AUD 0.7996
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4 A600 V1.65 OhmsN - Channel  - 55 C+ 150 C83 WThrough HoleD - PAKReelSi1 Channel     
PJM2302NSA-S


MOSFET N Trench 20V 2A 1.2V @ 250uA 50 mΩ @ 2A,4.5V SOT-23 RoHS
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Pingjingsemi 7508
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AUD 0.0201
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BSZ042N06NS


Infineon Technologies MOSFET N-Ch 60V 40A TDSON-8
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Infineon 7508
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AUD 0.9063
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40 A60 V4.2 mOhmsN - Channel 2.1 V- 55 C+ 150 C69 WSmd/SmtTSDSON - 8ReelSi1 Channel10 V27 nCEnhancement Optimos
PJM3415PSA


MOSFET P Trench 20V 4A 1V @ 250uA 50 mΩ @ 4A,4.5V SOT-23 RoHS
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Pingjingsemi 7500
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AUD 0.0345
Multiples of: 10

                   
Hot IRFH7004TRPBF


MOSFET N Trench 40V 100A (Tc) 3.9V @ 150uA 1.4 mΩ @ 100A,10V PQFN 5X6 RoHS
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Infineon 204
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AUD 1.0294
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259 A40 V1.1 mOhmsN - Channel 3 V  156 WSmd/SmtPQFN - 8ReelSi1 Channel 129 nC  Strongirfet
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