MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
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MOSFET P-Chnl 45V
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Diodes Incorporated 7568
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AUD 0.5385
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230 mA45 V14 OhmsP - Channel  - 55 C+ 150 C700 mWThrough HoleTO - 92 - 3BulkSi1 Channel20 V Enhancement  
RAL045P01TCR


P-Channel 12 V 4.5A (Ta) 1W (Ta) Surface Mount TUMT6
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ROHM 7561
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AUD 0.2299
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4.5 A- 12 V22 mOhmsP - Channel8 V - 55 C+ 150 C1 WSmd/SmtTUMT - 6ReelSi1 Channel8 V40 nCEnhancement  
ZVN2110A


MOSFET N-Chnl 100V
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Diodes Incorporated 7561
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AUD 0.3875
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320 mA100 V4 OhmsN - Channel 800 mV- 55 C+ 150 C700 mWThrough HoleTO - 92 - 3Cut TapeSi1 Channel10 V Enhancement  
BSC070N10LS5ATMA1


100V 7mO@40A,10V N Channel TDSON-8-7 MOSFETs ROHS
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Infineon 7557
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AUD 1.0819
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           Cut Tape       
NVJD4401NT1G


MOSFET NFET SC88 20V 630MA 375MO
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ON Semiconductor 7553
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AUD 0.3464
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630 mA20 V375 mOhmsN - Channel     Smd/SmtSOT - 363 - 6ReelSi    Aec - Q101 
DMN10H170SK3-13


Diodes Incorporated MOSFET 100V N-CH MOSFET 100V 12A
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Diodes Incorporated 7548
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AUD 0.3152
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12 A100 V140 mOhmsN - Channel 1 V- 55 C+ 150 C42 WSmd/SmtTO - 252 - 3ReelSi1 Channel10 V9.7 nCEnhancement  
BSC520N15NS3 G


MOSFET N-Ch 150V 21A TDSON-8 OptiMOS 3
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Infineon 7537
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AUD 0.6813
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21 A150 V52 mOhmsN - Channel 3 V- 55 C+ 150 C57 WSmd/SmtTDSON - 8ReelSi1 Channel20 V8.7 nC  Optimos
SSM3K15AMFV,L3F(T


SOT-723 MOSFETs ROHS
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Toshiba 7530
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AUD 0.0272
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IRLB8743PBF


Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
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Infineon 7524
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AUD 0.8866
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150 A30 V4.2 mOhmsN - Channel    140 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V36 nC   
NVE4153NT1G


ON Semiconductor MOSFET NFET SC89 20V 915MA 230MO
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ON Semiconductor 7445
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AUD 0.2413
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915 mA20 V127 mOhmsN - Channel 450 mV- 55 C+ 150 C300 mWSmd/SmtSC - 89 - 3ReelSi1 Channel6 V1.82 nCEnhancementAec - Q101 
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