MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STD30NF06LT4


Transistor: N-MOSFET; unipolar; 60V; 25A; 70W; DPAK
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STMicroelectronics 8099
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AUD 0.9881
Multiples of: 1

            Supermesh      
2N7002KPW-AQ


MOSFETs MOSFET, SOT-323, 60V, 0.31A, 150C, N, AEC-Q101
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Diotec 8098
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AUD 0.0437
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310 mA60 V1.6 OhmsN - Channel 2.1 V + 150 C310 mWSMD/SMTSOT - 323 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V1.1 nCEnhancementAEC - Q101 
AP8810


MOSFET 2 N Channel（Double）Common Drain 20V 7A 1V @ 250uA 20 mΩ @ 6A,4.5V SOT23-6 RoHS
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Quan Li 8089
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AUD 0.2079
Multiples of: 5

                   
IPD35N10S3L-26


Infineon Technologies MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T
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Infineon 8087
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AUD 1.0529
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35 A100 V26 mOhmsN - Channel 1.2 V- 55 C+ 175 C71 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V30 nCEnhancementAec - Q101Optimos
Hot EM6M2T2R


ROHM Semiconductor MOSFET 1.2V Drive NchPch MOSFET
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ROHM 8084
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AUD 0.0666
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200 mA20 V700 mOhmsN - Channel, P - Channel10 V300 mV- 55 C+ 150 C150 mWSmd/SmtEMT - 6ReelSi2 Channel- 4.5 v , 4 V Enhancement  
DMP4050SSS-13


MOSFET MOSFET,P-CHANNEL -40V, -4.7A,-6.0A
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Diodes Incorporated 8083
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AUD 0.4121
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4.4 A40 V50 mOhmsP - Channel 1 V- 55 C+ 150 C1.56 WSmd/SmtSO - 8Cut TapeSi1 Channel10 V13.9 nCEnhancement  
IRFIZ24NPBF


Transistor: N-MOSFET; unipolar; 55V; 13A; 26W; TO220FP
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Infineon 8082
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AUD 0.8667
Multiples of: 1

13 A55 V70 mOhmsN - Channel    26 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V13.3 nC   
BSP322PH6327


Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
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Infineon 8062
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AUD 0.4051
Multiples of: 1

            Sipmos      
VN10LFTA


60V 150mA 5O@10V,500mA 330mW N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 8058
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AUD 0.3021
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150 mA60 V5 OhmsN - Channel 800 mV- 55 C+ 150 C330 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
SQ4937EY-T1_GE3


MOSFET Dual P-Chnl 30-V D-S AEC-Q101 Qualified
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Vishay 8057
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AUD 0.8331
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5 A30 V56 mOhms , 56 mOhmsP - Channel 2.5 V- 55 C+ 175 C3.3 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V15 nC , 15 nCEnhancementAec - Q101Trenchfet
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