MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCE4606


MOSFET N & P Trench 30V 6.5A,7A 3V @ 250uA 30 mΩ @ 6A,10V SOIC-8_150mil RoHS
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NCE Power 7585
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AUD 0.1211
Multiples of: 5

                   
DMC3028LSDXQ-13


MOSFET Comp Pair Enh FET 30Vdss 20Vgss
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Diodes Incorporated 7585
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AUD 0.4088
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7.2 A , - 7.6 A30 v , - 30 V35 mOhms , 41 mOhmsN - Channel, P - Channel 1 v , - 1 V- 55 C+ 150 C1.5 WSmd/SmtSOIC - 8ReelSi +/- 20 v , +/- 20 V13.2 nC , 22 nCEnhancementAec - Q101 
SI7852DP-T1-E3


MOSFET 80V Vds 20V Vgs PowerPAK SO-8
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Vishay 7582
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AUD 2.1672
Multiples of: 1

12.5 A80 V16.5 mOhmsN - Channel 2 V- 55 C+ 150 C5.2 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel10 V34 nCEnhancement Trenchfet
HSBB6115


MOSFET P Channel 60V 26A 2.5V @ 250uA 25mΩ @ 10A,10V PRPAK3x3 RoHS
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HUASHUO 7575
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AUD 0.3703
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IPD036N04LGATMA1


N-Channel 40V 90A (Tc) 94W (Tc) Surface Mount PG-TO252-3-11
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Infineon 7575
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AUD 0.962
Multiples of: 1

          TO - 252 - 3 , DPAK (2 Leads + Tab) , SC - 63Tape And ReelMosfet (Metal Oxide)      
BSC016N04LS G


MOSFET OptiMOS 3 PWR TRANST 40V 100A
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Infineon 7568
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AUD 1.3766
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100 A40 V1.3 mOhmsN - Channel 1.2 V- 55 C+ 150 C139 WSmd/SmtTDSONReelSi1 Channel20 V150 nCEnhancement Optimos
DMN2065UW-7


Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V 8V-24V SOT323 T&R 3K
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Diodes Incorporated 7566
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AUD 0.1034
Multiples of: 1

3.1 A20 V140 mOhmsN - Channel12 V1 V- 55 C+ 150 C700 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel4.5 V5.4 nCEnhancement  
STW75NF20


Transistor: N-MOSFET; unipolar; 200V; 47A; 190W; TO247
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STMicroelectronics 7566
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AUD 2.6418
Multiples of: 600

            Mdmesh      
FDMS86310


MOSFET 80V N-Channel PowerTrench MOSFET
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ON Semiconductor 7565
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AUD 1.9866
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17 A80 V6.7 mOhmsN - Channel  - 55 C+ 150 C96 WSmd/SmtPOWER - 56ReelSi1 Channel    Powertrench
AON6144


MOSFET N Trench 40V 100A (Tc) 2.4V @ 250uA 2.4 mΩ @ 20A,10V DFN 5x6 RoHS
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Alpha & Omega 888
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AUD 0.9466
Multiples of: 1

                   
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