MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTMD4820NR2G


MOSFET NFET SO8 30V 8A TR 0.020R
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ON Semiconductor 7747
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AUD 0.6465
Multiples of: 1

6.4 A30 V20 mOhmsn - channel  - 55 C+ 150 C1.28 Wsmd/smtSOIC - 8 NarrowReelsi1 channel20 V7.7 nCenhancement  
MCG5D9N03YL-TP


MOSFETs N-CHANNEL MOSFET,DFN3333
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Micro Commercial Components (MCC) 7744
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AUD 0.2008
Multiples of: 1

45 A30 V5.9 mOhmsN - Channel 2.5 V- 55 C+ 150 C22 WSMD/SMTDFN3333 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V12.4 nCEnhancement  
TN0104N8-G


Transistor: N-MOSFET; unipolar; 40V; 2A; 1.6W; SOT89-3
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Microchip 7740
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AUD 1.2873
Multiples of: 500

2.9 A40 V2 OhmsN - Channel  - 55 C+ 150 C1.6 WSmd/SmtTO - 243AA (SOT - 89)ReelSi1 Channel20 V Enhancement  
BSC030N03MSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
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Infineon 7730
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AUD 0.806
Multiples of: 1

            Optimos 3      
IRFR9310TRPBF


P-Channel 400 V 1.8A (Tc) 50W (Tc) Surface Mount D-Pak
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Vishay 7716
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AUD 0.7633
Multiples of: 1

1.8 A400 V7 OhmsP - Channel 2 V- 55 C+ 150 C50 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V13 nCEnhancement  
FDPF20N50T


MOSFET 500V 20A NCH MOSFET
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ON Semiconductor 7714
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AUD 2.906
Multiples of: 1

   N - Channel  - 55 C+ 150 C Through HoleTO - 220FTube       
DMN62D0UW-7


MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
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Diodes Incorporated 7713
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AUD 0.0575
Multiples of: 1

340 mA60 V1.2 OhmsN - Channel 500 mV- 55 C+ 150 C320 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel20 V500 pCEnhancement  
R6003KND4TL1


MOSFETs 600V 1.3A SOT-223-3, High-speed switching Power MOSFET: R6009KND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
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ROHM 7626
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AUD 0.55
Multiples of: 1

1.3 A600 V1.5 OhmsN - Channel 5.5 V- 55 C+ 150 C7.8 WSMD/SMTSOT - 223 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V8 nCEnhancement  
PMDT290UCE,115


Mosfet Array N and P-Channel 20V 800mA, 550mA 500mW Surface Mount SOT-666
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Nexperia 4003
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AUD 0.1822
Multiples of: 1

   N And P - Channel  - 55 C+ 150 C Smd/SmtSOT - 666Reel       
BUK9K5R6-30EX


MOSFET MOSFET N-CH 30V 40A
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Nexperia 3879
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AUD 0.8833
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40 A , 40 A30 v , 30 V3.9 mOhms , 3.9 mOhmsN - Channel 1.4 v , 1.4 V- 55 C+ 175 C64 WSmd/SmtLFPAK56D - 8ReelSi2 Channel10 v , 10 V22.6 nC , 22.6 nCEnhancement  
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