MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP4013LFG-7


Diodes Incorporated MOSFET P-Ch 40V Enh Mode 60Vds 20Vgs 2569pF
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Diodes Incorporated 30230
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AUD 0.5664
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13.7 A40 V13 mOhmsP - Channel 1 V- 55 C+ 150 C2.1 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel- 10 V68.6 nCEnhancement  
TN2510N8-G


Transistor: N-MOSFET; unipolar; 100V; 3A; 1.6W; SOT89-3
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Microchip 7663
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AUD 1.25
Multiples of: 500

730 mA100 V1.5 OhmsN - Channel 600 mV- 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel10 V Enhancement  
SIR578DP-T1-RE3


MOSFETs SOT669 150V 70.2A N-CH MOSFET
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Vishay 7663
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AUD 1.5819
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70.2 A150 V8.8 mOhmsN - Channel 4 V- 55 C+ 150 C SMD/SMTSO - 8 Si1 Channel- 10 V , + 10 V24.5 nCEnhancement  
PMZB670UPE,315


MOSFET P-Chan -20V -680mA
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Nexperia 7655
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AUD 0.1215
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680 mA20 V850 mOhmsP - Channel    715 mWSmd/SmtSOT - 883BReelSi1 Channel8 V    
SI2318DS


SOT23 MOSFETs ROHS
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TECH PUBLIC 7654
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AUD 0.1065
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SSM6N15AFE,LM


Toshiba MOSFET 30V VDSS 20V VGSS N-Ch 150mW PD
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Toshiba 7653
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AUD 0.0739
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100 mA30 V3.6 OhmsN - Channel    150 mWSmd/SmtSOT - 23 - 6ReelSi2 Channel     
FDMS86320


MOSFET N-Chan PowerTrench MOSFET 80V, 22A
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ON Semiconductor 7651
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AUD 1.1
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22 A80 V11.7 mOhmsN - Channel  - 55 C+ 150 C69 WSmd/SmtPOWER 56ReelSi1 Channel20 V   Powertrench
PSMN012-60YS,115


MOSFET N-CHANNEL 60V STD LEVEL MOSFET
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Nexperia 7646
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AUD 0.7076
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59 A60 V17.8 mOhmsN - Channel 4.6 V- 55 C+ 175 C89 WSmd/SmtSOT - 669ReelSi1 Channel20 V28.4 nCEnhancement  
2SK3018


MOSFET N Channel 30V 100mA 1.5V @ 100uA 8Ω @ 10mA,4V SOT-23 RoHS
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Shikues 7644
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AUD 0.0174
Multiples of: 20

                   
MCQ014N10YL-TP


MOSFETs N-CHANNEL MOSFET,SOP-8
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Micro Commercial Components (MCC) 7643
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AUD 0.4225
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11 A100 V14 mOhmsN - Channel 3 V- 55 C+ 150 C2.5 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V30 nCEnhancement  
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