MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVMFWS1D7N04XMT1G


MOSFETs 40V T10M IN SO8FL PACKAGE
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ON Semiconductor 7407
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AUD 0.9051
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154 A40 V1.65 mOhmsN - Channel 3.5 V- 55 C+ 175 C75 WSMD/SMTDFNW - 5Reel , Cut TapeSi1 Channel+ 20 V29 nCEnhancement  
TQM110NB04DCR RLG


MOSFET 40V, 50A, Dual N-Channel Power MOSFET
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Taiwan Semiconductor 7406
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AUD 3.3462
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10 A40 V11 mOhmsN - Channel 3.8 V- 55 C+ 175 C2.5 WSMD/SMTPDFN56U - 6Reel , Cut TapeSi2 Channel- 20 V , + 20 V26 nCEnhancementAEC - Q101 
S4896D


40V 40A 7.2mΩ 3V 2 N-Channel PDFN-8(3x3) MOSFETs ROHS
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HL 7405
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AUD 0.1501
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DMT35M4LFDF-7


MOSFET MOSFET BVDSS: 25V 30V U-DFN2020-6 T&R 3K
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Diodes Incorporated 7404
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AUD 0.2448
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           Cut Tape       
S150N03D


PDFN-8L(3x3) MOSFETs ROHS
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HL 7401
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AUD 0.1924
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IPG16N10S4-61


Infineon Technologies MOSFET MOSFET
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Infineon 7397
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AUD 0.8307
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16 A100 V53 mOhms , 53 mOhmsN - Channel 2 V- 55 C+ 175 C29 WSmd/SmtTDSON - 8ReelSi1 Channel20 V7 nC , 7 nCEnhancementAec - Q101 
IRFR3410TRPBF


MOSFET N Trench 100V 31A 4V @ 250uA 39 mΩ @ 18A,10V TO-252-2 (DPAK) RoHS
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Infineon 7393
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AUD 0.507
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31 A100 V39 mOhmsN - Channel 4 V- 55 C+ 175 C110 WSmd/SmtDPAKReelSi1 Channel20 V37 nCEnhancement  
AON7804


Mosfet Array 2 N-Channel (Dual) 30V 9A 3.1W Surface Mount 8-DFN (3x3)
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Alpha & Omega 7391
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AUD 0.2846
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DMC3028LSDXQ-13


MOSFET Comp Pair Enh FET 30Vdss 20Vgss
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Diodes Incorporated 7387
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AUD 0.4745
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7.2 A , - 7.6 A30 v , - 30 V35 mOhms , 41 mOhmsN - Channel, P - Channel 1 v , - 1 V- 55 C+ 150 C1.5 WSmd/SmtSOIC - 8ReelSi +/- 20 v , +/- 20 V13.2 nC , 22 nCEnhancementAec - Q101 
BCD50N06


60V 50A N Channel TO-252 MOSFETs ROHS
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Shandong Baocheng 7328
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AUD 0.1354
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