MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD180N10N3GATMA1


MOSFET MV POWER MOS
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Infineon 7704
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AUD 0.6748
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         Smd/SmtTO - 252 - 3Cut TapeSi      
TNM03K20BX


20V 500mA 6V 1PCSNChannel DFN1006-3L MOSFETs ROHS
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Shenzhen JingYang 7697
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AUD 0.0282
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SQJB68EP-T1_BE3


MOSFET DUAL N-CHANNEL 100-V (D-S) 175C MOSFET
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Vishay 7688
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AUD 0.527
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IRFSL7434PBF


International Rectifier MOSFET HEXFET Power MOSFET 40V Single N-Channel
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Infineon 7687
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AUD 2.6586
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320 A40 V1.6 mOhmsN - Channel 3 V- 55 C+ 175 C294 WThrough HoleTO - 262 - 3TubeSi1 Channel20 V216 nCEnhancement Strongirfet
TSM4800N15CX6 RFG


MOSFET 150V 1.4A Single N-C hannel Power MOSFET
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Taiwan Semiconductor 7686
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AUD 0.8442
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           Cut Tape       
IPB80P04P4L04ATMA2


MOSFET MOSFET_(20V 40V)
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Infineon 7683
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AUD 2.4825
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80 A40 V5.6 mOhmsP - Channel 1.7 V- 55 C+ 175 C125 WSMD/SMTTO - 263 - 3 - 2Cut Tape , ReelSi1 Channel- 16 V , + 5 V135 nCEnhancement  
IPD50P04P413ATMA2


MOSFET MOSFET_20V 40V
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Infineon 7677
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AUD 0.9094
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           Cut Tape       
FDD8878


N-Channel 30 V 11A (Ta), 40A (Tc) 40W (Tc) Surface Mount TO-252AA
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ON Semiconductor 7671
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AUD 1.1153
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40 A30 V15 mOhmsn - channel  - 55 C+ 175 C40 Wsmd/smtTO - 252ABReelsi1 channel20 V enhancement powertrench
DMN2041UVT-7


MOSFET MOSFET BVDSS: 8V 24V TSOT26 T&R 3K
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Diodes Incorporated 7670
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AUD 0.1888
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SI4178DY-T1-GE3


MOSFET 30V Vds 25V Vgs SO-8
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Vishay 6198
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AUD 0.2575
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12 A30 V21 mOhmsN - Channel 1.4 V- 55 C+ 150 C5 WSmd/SmtSO - 8Cut TapeSi1 Channel10 V7.5 nCEnhancement Trenchfet
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