MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO4435


30V 10.5A 13m@10V,10.5A 3.1W 1.5V@250uA 1PCSPChannel SOP-8 MOSFETs ROHS
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ElecSuper 8511
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AUD 0.0924
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NDDL01N60Z-1G


ON Semiconductor MOSFET NFET DPAK 600V 1.5A 8.50H
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ON Semiconductor 8511
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AUD 0.325
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800 mA600 V12.2 OhmsN - Channel 3 V- 55 C+ 150 C26 WThrough HoleTO - 251 - 3TubeSi1 Channel30 V4.9 nCEnhancement  
APG022N06G


60V 150A 140W 1.9mΩ@10V,20A N Channel PDFN-8(5x6) MOSFETs ROHS
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Quan Li 8507
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AUD 1.4393
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2N7002KDW-TP


MOSFET Dual N-Ch 60Vds 20Vgs 340mA 150mW
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Micro Commercial Components (MCC) 8506
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AUD 0.1222
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BSS126 H6327


MOSFET N-KANAL SMALL SIGNAL MOS
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Infineon 8501
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AUD 0.1851
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21 mA600 V500 OhmsN - Channel 2.7 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel10 V2.1 nCDepletion  
SI7114DN-T1-E3


MOSFET 30V 18.3A 3.8W 7.5mohm @ 10V
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Vishay 8501
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AUD 1.5714
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel       
TPM20V7NLS6


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 8497
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AUD 0.135
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BSS806N H6327


Infineon Technologies MOSFET N-Ch 20V 2.3A SOT-23-3
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Infineon 8496
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AUD 0.0978
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2.3 A20 V41 mOhmsN - Channel 550 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3-Si1 Channel20 V1.7 nCEnhancementAec - Q101 
DMN10H170SK3-13


Diodes Incorporated MOSFET 100V N-CH MOSFET 100V 12A
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Diodes Incorporated 8495
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AUD 0.3929
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12 A100 V140 mOhmsN - Channel 1 V- 55 C+ 150 C42 WSmd/SmtTO - 252 - 3ReelSi1 Channel10 V9.7 nCEnhancement  
DMP3068L-7


MOSFET 30V P-Ch Enh Mode 72mOhm -10V -3.9A
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Diodes Incorporated 8128
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AUD 0.0677
Multiples of: 10

3.3 A30 V72 mOhmsP - Channel 500 mV- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V15.9 nCEnhancement  
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