MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPNTS4101PT1G


20V 2.3A 100mΩ@4.5V,2.3A 290mW 700mV@250uA 82pF@8V P Channel 640pF@8V +125℃@(Tj) SOT-323 MOSFETs ROHS
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TECH PUBLIC 9700
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AUD 0.05
Multiples of: 10

                   
TSM080N03EPQ56 RLG


MOSFET 30V 55A Single N-Channel Power MOSFET
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Taiwan Semiconductor 7728
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AUD 0.3749
Multiples of: 1

55 A30 V6.5 mOhmsN - Channel 1 V- 55 C+ 150 C54 WSmd/SmtPDFN56 - 8Cut TapeSi1 Channel10 V7.5 nCEnhancement  
3415


20V 4.1A 30mΩ 1V P Channel SOT23 MOSFETs ROHS
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HL 7721
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AUD 0.0258
Multiples of: 20

                   
DMN2058UW-7


MOSFET MOSFET BVDSS: 8V~24V SOT323 T&R 3K
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Diodes Incorporated 7716
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AUD 0.0844
Multiples of: 5

3.5 A20 V42 mOhmsN - Channel 400 mV- 55 C+ 150 C0.7 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel12 V7.7 nCEnhancement  
AO3401


SOT-23 MOSFETs ROHS
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PAKER Microelectronics 7701
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AUD 0.0339
Multiples of: 20

                   
BSC0902NSI


MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
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Infineon 7697
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AUD 0.4416
Multiples of: 1

100 A30 V2.2 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtPG - TDSON - 8ReelSi1 Channel20 V   Optimos
BUK7635-55A,118


NXP Semiconductors MOSFET TAPE13 PWR-MOS
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Nexperia 7693
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AUD 1.8797
Multiples of: 1

35 A55 V35 mOhmsn - channel  - 55 C+ 175 C85 Wsmd/smtSOT - 404 - 3Reelsi1 channel20 V enhancement  
SQRS160EP-T1_GE3


MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET
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Vishay 7682
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AUD 2.1529
Multiples of: 1

373 A60 V2 mOhmsN - Channel 3.2 V- 55 C+ 175 C270 WSMD/SMTPOWERPAK SO - 8SW Si1 Channel20 V130 nCEnhancement  
SIRA64DP-T1-RE3


MOSFET 30V Vds 20V Vgs PowerPAK SO-8
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Vishay 7017
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AUD 0.8723
Multiples of: 1

60 A30 V1.8 mOhmsN - Channel 1.1 V- 55 C+ 150 C27.8 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 v , - 16 V65 nCEnhancement Trenchfet
AP3908GD


1PCSN-Channel&1PCSP-Channel DFN-8(5x6) MOSFETs ROHS
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Quan Li 5383
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AUD 0.2575
Multiples of: 5

                   
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