MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI1922EDH-T1-BE3


Mosfet Array 2 N-Channel (Dual) 20V 1.3A (Ta), 1.3A (Tc) 740mW (Ta), 1.25W (Tc) Surface Mount SC-70-6
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Vishay 7783
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AUD 0.2003
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          6 - TSSOP , SC - 88 , SOT - 363Digi - Reel®       
BSS138


MOSFET N Trench 50V 220mA 1.6V @ 1mA 3.5 Ω @ 220mA,10V SOT-23 (SOT-23-3) RoHS
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AnBon 7779
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AUD 0.023
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CJBA3541K


MOSFET DFN1006-3L RoHS
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Changjing Electronics Technology 7779
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AUD 0.0421
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BSC0925ND


MOSFET N-Ch 30V 40A TISON-8
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Infineon 7779
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AUD 0.7423
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40 A30 V4.2 mOhms , 4.2 mOhmsN - Channel 1.2 V- 55 C+ 150 C30 WSmd/SmtTISON - 8Cut TapeSi2 Channel20 V17 nC , 17 nCEnhancement Optimos
IRFH5210TRPBF


Transistor: N-MOSFET; unipolar; 100V; 10A; 3.6W; PQFN5X6
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Infineon 7773
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AUD 0.9142
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10 A100 V14.9 mOhmsN - Channel 4 V- 55 C+ 150 C3.6 WSmd/SmtPQFN - 8ReelSi1 Channel20 V40 nCEnhancement  
ES6U2T2R


MOSFET 1.5V Drive Nch+SBD MOSFET
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ROHM 7760
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AUD 0.1659
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1.5 A20 V130 mOhmsN - Channel, Sbd 300 mV- 55 C+ 150 C800 mWSmd/SmtSOT - 563T - 6Tape And ReelSi1 Channel10 V1.8 nCEnhancement  
FQT5P10TF


Transistor: P-MOSFET; unipolar; -100V; -0.8A; 2W; SOT223
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ON Semiconductor 7760
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AUD 0.4101
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   P Channel               
IRFH8318TRPBF


MOSFET N Trench 30V 27A 2.35V @ 50uA 3.1 mΩ @ 20A,10V PQFN 5x6 RoHS
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Infineon 7760
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AUD 0.4829
Multiples of: 4000

120 A30 V4.6 mOhmsN - Channel 1.8 V- 55 C+ 150 C3.6 WSmd/SmtPQFN - 8ReelSi1 Channel20 V41 nC   
RV1C002UNT2CL


MOSFET Nch Small Signal MOSFET
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ROHM 7701
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AUD 0.0656
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150 mA20 V2 OhmsN - Channel 300 mV- 55 C+ 150 C100 mWSmd/SmtVML0806 - 3ReelSi1 Channel4.5 V Enhancement  
RZF030P01TL


MOSFET Med Pwr, Sw MOSFET P Chan, -12V, 1.5A
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ROHM 6803
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AUD 0.3501
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3 A12 V28 mOhmsP - Channel  - 55 C+ 150 C800 mWSmd/SmtTUMT - 3ReelSi1 Channel10 V18 nCEnhancement  
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