MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML6244TRPBF


20V 6A 25mΩ@4.5V,6A 1.25W 1V@250uA null SOT-23 MOSFETs ROHS
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Yongyutai Electronics 8002
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AUD 0.0451
Multiples of: 10

                   
NTMFS5C430NLT1G


MOSFET NFET SO8FL 40V 200A
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ON Semiconductor 8002
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AUD 0.5386
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200 A40 V2.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C110 WSmd/SmtDFN - 5ReelSi1 Channel+/- 20 V70 nCEnhancement  
IRFR320PBF


N-Channel 400 V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay 7999
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AUD 0.5394
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3.1 A400 V1.8 OhmsN - Channel 2 V- 55 C+ 150 C42 WSmd/SmtTO - 252 - 3TubeSi1 Channel10 V20 nCEnhancement  
DMC2057UVT-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 7996
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AUD 0.1346
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4 A , 3.3 A20 V42 mOhms , 70 mOhmsN - Channel, P - Channel 400 mV , 1 V- 55 C+ 150 C1.1 WSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel12 v , 8 V10.5 nC , 6.5 nCEnhancement  
NVMFWS1D7N04XMT1G


MOSFETs 40V T10M IN SO8FL PACKAGE
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ON Semiconductor 7995
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AUD 0.9865
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154 A40 V1.65 mOhmsN - Channel 3.5 V- 55 C+ 175 C75 WSMD/SMTDFNW - 5Reel , Cut TapeSi1 Channel+ 20 V29 nCEnhancement  
CEDM7002AE TR


MOSFET 60V N-Ch ESD FET 60Vdg 20Vgs 100mW
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Central Semiconductor 7987
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AUD 0.1554
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         Smd/SmtSOT - 883LCut TapeSi      
TM04N10MI


SOT-23-3L MOSFETs ROHS
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Tritech-MOS 7983
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AUD 0.039
Multiples of: 10

                   
STD15NF10L


TO-252 MOSFETs ROHS
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Youtai 7980
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AUD 0.3385
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MVGSF1N02LT1G


ON Semiconductor MOSFET
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ON Semiconductor 7979
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AUD 0.3316
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750 mA20 V90 mOhmsN - Channel  - 55 C+ 150 C400 mWSmd/SmtSOT - 23 - 3ReelSi    Aec - Q101 
FCB20N60TM


Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
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ON Semiconductor 7151
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AUD 4.0716
Multiples of: 1

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