MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002PS.115


Transistor: N-MOSFET x2; unipolar; 60V; 0.32A; 420mW; SC88
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Nexperia 8584
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AUD 0.1422
Multiples of: 1

                   
2N7002KM


SOT-723 MOSFETs ROHS
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Shikues 8582
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AUD 0.0249
Multiples of: 20

                   
SH8KC6TB1


MOSFET 60V DUAL MOSFET
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ROHM 8578
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AUD 0.6163
Multiples of: 1

6.5 A60 V32 mOhmsN - Channel 2.5 V- 55 C+ 150 C2 WSMD/SMTSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V7.6 nCEnhancement  
IRFR120NTRLPBF


Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
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Infineon 8572
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AUD 0.6303
Multiples of: 1

9.4 A100 V210 mOhmsN - Channel 4 V- 55 C+ 175 C48 WSmd/SmtDPAKReelSi1 Channel20 V25 nC   
2N7002BKS


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 2 N-Channel SOT-363 MOSFETs ROHS
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ElecSuper 8571
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AUD 0.033
Multiples of: 20

                   
SI4435DYTRPBF


MOSFET P Trench 30V 8A 1V @ 250uA 20 mΩ @ 8A,10V SOIC-8_150mil RoHS
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Infineon 8570
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AUD 0.4697
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8 A30 V35 mOhmsP - Channel  - 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V40 nCEnhancement  
HXY3139CI


20V 0.66A 560mΩ@4.5V 0.15W P Channel SOT-523 MOSFETs ROHS
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HXY MOS 8565
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AUD 0.0227
Multiples of: 10

                   
NCEP40T11G


MOSFET N Trench 40V 110A (Tc) 2.2V @ 250uA 2.8 mΩ @ 55A,10V DFN 5x6-8L RoHS
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NCE Power 8565
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AUD 0.3908
Multiples of: 5

                   
TSM150P04LCS RLG


MOSFET -40V -22A Single P Channel Power MOSFET
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Taiwan Semiconductor 8561
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AUD 1.6666
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22 A40 V11 mOhmsN - Channel 1 V- 55 C+ 150 C12.5 w , 2.2 WSmd/SmtSOP - 8Cut TapeSi1 Channel10 V48 nCEnhancement  
FDS8984


Transistor: N-MOSFET x2; unipolar; 30V; 7A; 1.6W; SO8
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ON Semiconductor 8477
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AUD 0.4325
Multiples of: 1

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