MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZXMN10A11GTA


N-Channel 100 V 1.7A (Ta) 2W (Ta) Surface Mount SOT-223-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 7760
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AUD 0.4974
Multiples of: 1000

2.4 A100 V350 mOhmsn - channel 2 V- 55 C+ 150 C2 Wsmd/smtSOT - 223 - 3Cut Tapesi1 channel10 V5.4 nCenhancement  
CSD25480F3T


MOSFET -20V P-channel FemtoFET MOSFET
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Texas Instruments 7760
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AUD 0.5385
Multiples of: 1

- 1.7 A- 20 V110 mOhmsP - Channel - 950 mV- 55 C+ 150 C500 mWSmd/SmtQFN - 3ReelSi1 Channel- 12 V0.7 nCEnhancement Picostar
IRF2807PBF


MOSFET N Trench 75V 82A 4V @ 250uA 13 mΩ @ 43A,10V TO-220 (TO-220-3) RoHS
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Infineon 7760
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AUD 0.5753
Multiples of: 1

            Hexfet®      
Hot IRF7832TRPBF


MOSFET N Trench 30V 20A 2.32V @ 250uA 4 mΩ @ 20A,10V SOIC-8_150mil RoHS
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Infineon 7760
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AUD 0.5944
Multiples of: 4000

20 A30 V3.7 mOhmsN - Channel 2.32 V- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V34 nC   
IRFRC20TRPBF


N-Channel 600 V 2A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay 7760
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AUD 0.599
Multiples of: 2000

         Smd/SmtTO - 252 - 3Cut TapeSi      
IRFB4410ZPBF


MOSFET N Trench 100V 97A 4V @ 150uA 9 mΩ @ 58A,10V TO-220 (TO-220-3) RoHS
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Infineon 7760
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AUD 0.6212
Multiples of: 1

97 A100 V7.2 mOhmsN - Channel    230 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V83 nC   
IPP086N10N3GXKSA1


Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO220-3
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Infineon 7760
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AUD 1.3562
Multiples of: 500

            Optimos 5      
TJ50S06M3L(T6L1,NQ


Toshiba MOSFET P-Ch MOS -50A -60V 90W 6290pF 0.0138
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Toshiba 7760
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AUD 1.4023
Multiples of: 2000

- 50 A- 60 V13.8 mOhmsP - Channel    90 WSmd/SmtTO - 252 - 3ReelSi1 Channel     
IRF1404ZSTRLPBF


Transistor: N-MOSFET; unipolar; 40V; 190A; 220W; D2PAK
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Infineon 7760
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AUD 1.4752
Multiples of: 800

190 A40 V2.7 mOhmsN - Channel    220 WSmd/SmtD2PAKReelSi1 Channel20 V100 nC   
SIHU6N62E-GE3


Vishay Semiconductors MOSFET 620V 900mOhm10V 6A N-Ch E-SRS
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Vishay 7760
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AUD 1.5229
Multiples of: 50

6 A620 V900 mOhmsN - Channel 4 V- 55 C+ 150 C78 WThrough HoleTO - 251 - 3-Si1 Channel30 V17 nCEnhancement  
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